SIPMOS Small-Signal Transistor BSP 135

SIPMOS ® Small-Signal Transistor BSP 135
● V DS 600 V
● I D 0.100 A
● R DS(on) 60 Ω
● N channel
● Depletion mode
● High dynamic resistance
● Available grouped in V GS(th)
Type Ordering Tape and Reel Information Pin Configuration Marking Package
Code
1 2 3 4
BSP 135 Q62702-S655 E6327: 1000 pcs/reel G D S D BSP 135 SOT-223
BSP 135 Q67000-S283 E6906: 1000 pcs/reel
V GS(th) selected in groups:
(see page 219)
Maximum Ratings
Parameter Symbol Values Unit
Drain-source voltage V DS 600 V
Drain-gate voltage, R GS = 20 kΩ V DGR 600
Gate-source voltage V GS ± 14
Gate-source peak voltage, aperiodic V gs ± 20
Continuous drain current, T A = 44 ˚C I D 0.100 A
Pulsed drain current, T A = 25 ˚C I D puls 0.30
Max. power dissipation, T A = 25 ˚C P tot 1.7 W
Operating and storage temperature range T j , T stg – 55 … + 150 ˚C
Thermal resistance 1)
chip-ambient
chip-soldering point R thJS
R thJA 72
R thJS 12
DIN humidity category, DIN 40 040 – E –
IEC climatic category, DIN IEC 68-1 – 55/150/56
1)
Transistor on epoxy pcb 40 mm × 40 mm × 1.5 mm with 6 cm 2 copper area for drain connection.
K/W
Semiconductor Group 1 09.96

BSP 135
Electrical Characteristics
at T j = 25 ˚C, unless otherwise specified.
Parameter Symbol Values Unit
min. typ. max.
Static Characteristics
Drain-source breakdown voltage
V GS = − 3 V, I D = 0.25 mA
Gate threshold voltage
V DS = 3 V, I D = 1 mA
Drain-source cutoff current
V DS = 600 V, V GS = − 3 V
T j = 25 ˚C
T j = 125 ˚C
Gate-source leakage current
V GS = 20 V, V DS = 0
Drain-source on-resistance
V GS = 0 V, I D = 0.01 A
V (BR)DSS
600 – –
V GS(th)
− 1.8 − 1.5 − 0.7
–
–
–
–
100
200
I GSS
– 10 100
R DS(on)
– 40 60
V
nA
µA
nA
Ω
g
Dynamic Characteristics
Forward transconductance
S
V DS ≥ 2 × I D × R DS(on)max , I D = 0.01 A
fs
0.01 0.04 –
Input capacitance
C iss
pF
V GS = − 3 V, V DS = 25 V, f = 1 MHz
– 110 150
Output capacitance
V GS = − 3 V, V DS = 25 V, f = 1 MHz
C oss
– 8 12
Reverse transfer capacitance
V GS = − 3 V, V DS = 25 V, f = 1 MHz
C rss
– 3 5
Turn-on time t on , (t on = t d(on) + t r ) t d(on) – 4 6 ns
V DD =30V,V GS = − 3 V ... + 5 V, R GS =50Ω, t r – 10 15
I D = 0.2 A
Turn-off time t off , (t off = t d(off) + t f ) t d(off) – 15 20
V DD =30V,V GS = − 3 V ... + 5 V, R GS =50Ω,
I D = 0.2 A
t f – 20 30
Semiconductor Group 2

BSP 135
Electrical Characteristics (cont’d)
at T j = 25 ˚C, unless otherwise specified.
Parameter Symbol Values Unit
Reverse Diode
Continuous reverse drain current
T A = 25 ˚C
Pulsed reverse drain current
T A = 25 ˚C
Diode forward on-voltage
I F = 0.2 A, V GS = 0
min. typ. max.
I S
– – 0.100
I SM
– – 0.300
V SD
– 0.90 1.30
A
V
V GS(th) Grouping Symbol Limit Values Unit Test Condition
min. max.
Range of V GS(th) ∆V GS(th) – 0.15 V –
Threshold voltage selected in groups 1) :
P
R
S
T
U
V
W
1) A specific group cannot be ordered separately.
Each reel only contains transistors from one group.
Package Outline
V GS(th)
– 0.95
– 1.08
– 1.21
– 1.34
– 1.47
– 1.60
– 1.73
– 0.80
– 0.93
– 1.06
– 1.19
– 1.32
– 1.45
– 1.58
V
V
V
V
V
V
V
V DS1 = 0.2 V;
V DS2 = 3 V;
I D = 1 mA
SOT-223
Dimensions in mm
Semiconductor Group 3

Characteristics
at T j = 25 ˚C, unless otherwise specified
Total power dissipation P tot = f (T A )
Typ. output characteristics I D = f (V DS )
parameter: t p = 80 µs
BSP 135
Safe operating area I D = f (V DS )
parameter: D = 0.01, T C = 25 ˚C
Typ. drain-source on-resistance
R DS(on) = f (I D )
parameter: V GS
Semiconductor Group 4

BSP 135
Typ. transfer characteristics I D = f (V GS )
parameter: t p = 80 µs, V DS ≥ 2 × I D × R DS(on)max.
Typ. forward transconductance g fs = f (I D )
parameter: V DS ≥ 2 × I D × R DS(on)max. , t p = 80 µs
Drain-source on-resistance
R DS(on) = f(T j )
parameter: I D = 0.01 A, V GS = 0 V, (spread)
Typ. capacitances C = f (V DS )
parameter: V GS = 0, f = 1 MHz
Semiconductor Group 5

BSP 135
Gate threshold voltage V GS(th) = f (T j )
parameter: V DS = 3 V, I D = 1 mA, (spread)
Forward characteristics of reverse diode
I F = f (V SD )
parameter: t p = 80 µs, T j , (spread)
Drain current I D = f (T A )
parameter: V GS ≥ 3 V
Transient thermal impedance Z thJA = f (t p )
parameter: D = t p / T
Semiconductor Group 6

BSP 135
Drain-source breakdown voltage
V (BR) DSS = b × V (BR)DSS (25 ˚C)
Safe operating area I D = f (V DS )
parameter: D = 0, T C = 25 ˚C
Semiconductor Group 7