Thermoelectric Properties of Fe0.2Co3.8Sb12-xTex ... - Physics

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Microwave assisted synthesis of single crystalline ternary alloy-Bi 2-x Sb x Te 3 for thermoelectric applications Mitali Banerjee 1 , R.Venkatesh 2 , Arindam Ghosh 1 and N. Ravishankar 2 1 Department of physics Indian Institute of Science,Bangalore 560012, India, 2 Materials Research Centre, Indian Institute of Science,Bangalore 560012, India ABSTRACT The discovery of colossal enhancement of thermoelectric figure of merit in bismuthbased chalcogenide nanostructures has identified them as potential candidates for thermoelectric applications. Especially one shot facile synthesis of p-type bismuth antimony telluride which has been reported to show a large thermoelectric power around the room temperature still remains as a challenge. We report a surfactant-assisted wet chemical synthesis of nanostructures of single crystalline ternary Bi 2-x Sb x Te 3 (0.5
Sharp Raman anomalies and broken adiabaticity at a pressure induced transition from band to topological insulator in Sb 2 Se 3 Achintya Bera 1 , Koushik Pal 2, 3 , D. V. S. Muthu 1 , Somaditya Sen 4 , Prasenjit Guptasarma 4 , U. V. Waghmare 3 , and A. K. Sood 1 1 Department of Physics, Indian Institute of Science, Bangalore-560012, India 2 Chemistry and Physics of Materials Unit, Jawaharlal Nehru Centre for Advanced Scientific Research, Bangalore-560064, India 3 Theoretical Sciences Unit, Jawaharlal Nehru Centre for Advanced Scientific Research, Bangalore-560064, India and 4 Department of Physics, University of Wisconsin-Milwaukee, Wisconsin-53211, USA Recently discovered three-dimensional Topological insulators (TI) have attracted a lot of attention of researchers from diverse backgrounds due to robust and exotic phenomena, such as quantum spin Hall states, arise from the geometric and topological properties of the manifold of their electronic states. However, experimental evidence for nontrivial topology of electronic states is so far mainly based on the time-reversal symmetry protected chiral surface states. Signatures of the nontrivial topology of a TI in its bulk behaviour are subtle, and not yet identified. Our work presented here establishes that (a) bulk signatures of the electronic topology become significant and detectable as anomalies in the phonon frequency and linewidth of E g Raman mode at an electronic topological transition (specifically in single crystal Sb 2 Se 3 ), (b) their origin lies in physical mechanisms that involve going beyond adiabatic approximation as a metallic (vanishing gap) state of the bulk appears at the transition, and (c) they involve electron-phonon couplings some of which are not captured by the standard methods to calculate electronic structure. References: [1] Zhang, H. et al. “Topological insulators in Bi 2 Se 3 , Bi 2 Te 3 and Sb 2 Te 3 with a single Dirac cone on the surface”. Nature Phys. 5, 438-442 (2009). [2] G.K. Pradhan et al. “Raman signatures of pressure induced electronic topological and structural transitions in Bi 2 Te 3 ”. Solid State Commun. 152, 284–287 (2012)
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Session II 11:00-1:00 T07 11:00-11:
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Possible nature of internal disorde
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A new model of flow induced voltage
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Landau Level Spectroscopy of Broken
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Thermoelectric Properties of Fe0.2Co3.8Sb12-xTex ... - Physics

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