Thermoelectric Properties of Fe0.2Co3.8Sb12-xTex ... - Physics

Title of abstract: Transport properties and noise in hydrazine reduced graphene oxide.
Authors: Anindita Sahoo (1), Ryugo Tero (2), Tran Viet Thu (2), Yuji Tanizawa (3), Hiroshi
Okada (2,3), Adarsh Sandhu (2,3), Arindam Ghosh (1)
Affiliation: (1) Department of Physics, Indian Institute of Science, Bangalore 560012, (2)
Electronics Inspired Interdisciplinary Research Institute (EIIRIS), (3) Department of
Electrical and Electronic Engineering, Toyohashi University of Technology, 1-1
Hibarigaoka, Tempaku, Toyohashi 441-8580, JAPAN
Abstract:
Chemically reduced graphene oxide (GO) has attracted immense interest for large scale
production of graphene. This makes electrical properties, in particular resistivity and
flicker noise, in these systems extremely important for variety of electronic applications.
Here we present a study of electrical resistivity, bias stressing and flicker noise (or 1/f
noise) in hydrazine-reduced graphene oxide films as a function of the extent of reduction.
The electrical resistance measurement on individual monolayer flakes of reduced graphene
oxide (RGO) showed that its resistance decreases by four orders of magnitude when
GO is reduced by hydrazine. However, this decrease was associated with an increasing D-
peak in the Raman spectroscopy in comparison to shorter hydrazine treatments indicating
that hydrazine treatment introduces strong localized disorder in RGO, possibly
through crystal defects and impurities. This was further confirmed with bias stressing
and the measurement of 1/f noise (low frequency resistance fluctuation) on the RGO-
FET which showed that the presence of mobile defects in RGO with shorter hydrazine
treatment leads to a faster relaxation of source-drain current and higher value of noise
amplitude. Our experiments indicate that the nature as well as the kinetics of defects
depends on the extent of hydrazine treatment in chemically reduced GO films.