Thermoelectric Properties of Fe0.2Co3.8Sb12-xTex ... - Physics
Thermoelectric Properties of Fe0.2Co3.8Sb12-xTex ... - Physics
Thermoelectric Properties of Fe0.2Co3.8Sb12-xTex ... - Physics
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Possible nature <strong>of</strong> internal disorder in ultra-thin<br />
MoS 2 FET devices<br />
Subhamoy Ghatak, Paromita Kndu, N. Ravishankar and Arindam Ghosh<br />
We investigate possible existence <strong>of</strong> intrinsic disorder in ultrathin MoS 2 thin film transistors.<br />
For that we perform three kinds <strong>of</strong> independent electrical measurements on two classes <strong>of</strong><br />
MoS 2 -FET devices, on SiO 2 and on single crystalline hexagonal boron nitride (hBN)<br />
substrate. Using time averaged transport measurement, we find that the device quality in<br />
terms <strong>of</strong> mobility and charge relaxation remains almost similar for both the classes. We also<br />
study low frequency 1/f noise, sensitive to charge dynamics <strong>of</strong> system and observe that in<br />
both classes number density (n) fluctuation is the dominant mechanism <strong>of</strong> 1/f noise. From<br />
this, we predict that although external source <strong>of</strong> disorder can’t be ruled out, internal disorder<br />
might be the dominant source <strong>of</strong> disorder in atomically thin MoS 2 films.
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