量子電腦 - 中研院物理研究所
量子電腦 - 中研院物理研究所
量子電腦 - 中研院物理研究所
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Top-down approach for few qubit devices<br />
Controlled single-ion implantation<br />
• 14 KeV P ion beam is used to implant<br />
P dopants to an average depth of 15nm<br />
below the Si-SiO2<br />
• Ion-stopping resist defines the array<br />
sites<br />
• Each ion entering the Si substrate<br />
produces e-hole pair that drift in an<br />
applied electric field<br />
• Created single current pulse for each<br />
ion strike is detected by on-chip single<br />
ion detector circuit.<br />
95% confidence in ion detection<br />
50% confidence in each 2-donor device
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