如何寫好報告 - 中研院物理研究所

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Sample Structures 5×InGaN/GaN QWs Growth conditions MQW25 Wells and barriers grown at 715℃ n-GaN 2.48μm MQW27 Wells and barriers grown at 700℃ MQW28 Wells and barriers grown at 685℃ Al 2 O 3 (0001) MQW29 Wells grown at 685℃, barriers grown at 800℃, with H 2 flow added in growing barriers Nucleation layer: 20nm (amorphous) Carrier gas: N 2 Precursors: (C 2 H 5 ) 3 Ga and (CH 3 ) 3 In Growth temperatures Nucleation layer: 530℃ n-GaN: 1070℃ Thickness Barrier: 15 nm Well: 3.5 nm
High-Resolution Transmission Electron Microscopy (HRTEM) MQW25 (715℃) We can observe several indium clusters in nm size in InGaN layers. Note that typical growth temperature of GaN is 800℃.
Page 1 and 2: 一、半導體介紹二、
Page 3 and 4: 半導體介紹 Silicon-Based S
Page 5 and 6: 當原子排列形成晶體
Page 7 and 8: 最常見的半導體 — 矽
Page 9 and 10: 參雜 doping N 型參雜 N-type
Page 11 and 12: 說了那麼多 , 為什麼
Page 13 and 14: 三極體的特點是什麼
Page 18 and 19: 半導體介紹 — 發光二
Page 20 and 21: Why GaN-Based LED? Vegard’s law f
Page 22 and 23: Barrier: GaN Well: InGaN Indium-ric
Page 26 and 27: MQW28 (685℃) A broken QW structur
Page 28 and 29: Quasi-Structure Transformation m129
Page 30 and 31: 原子力顯微術 Atomic Forc
Page 32 and 33: 怎樣做奈米碳管探針
Page 34 and 35: 解析度 Resolution 針沒有
Page 36 and 37: 微機電系統 Micro-Electro-M
Page 38 and 39: 表面形貌量測 4 Å 3 Å 2
Page 40 and 41: 接近原子解析度的影

如何寫好報告 - 中研院物理研究所

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