如何寫好報告 - 中研院物理研究所
如何寫好報告 - 中研院物理研究所
如何寫好報告 - 中研院物理研究所
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Sample Structures<br />
5×InGaN/GaN QWs<br />
Growth conditions<br />
MQW25 Wells and barriers grown at 715℃<br />
n-GaN 2.48μm<br />
MQW27 Wells and barriers grown at 700℃<br />
MQW28 Wells and barriers grown at 685℃<br />
Al 2 O 3 (0001)<br />
MQW29<br />
Wells grown at 685℃, barriers<br />
grown at 800℃, with H 2 flow added<br />
in growing barriers<br />
Nucleation layer: 20nm<br />
(amorphous)<br />
Carrier gas: N 2<br />
Precursors: (C 2 H 5 ) 3 Ga and (CH 3 ) 3 In<br />
Growth temperatures<br />
Nucleation layer:<br />
530℃<br />
n-GaN: 1070℃<br />
Thickness<br />
Barrier: 15 nm<br />
Well: 3.5 nm
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