Nonlinear effects in Silicon Waveguides - The Institute of Optics ...

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Silicon-on-Insulator Technology 4/56 • Core waveguide layer is made of silicon (n 1 = 3.45). • A silica layer under the core layer is used for lower cladding. • Silica layer formed by implanting oxygen, followed with annealing. • A rib or ridge structure used for two-dimensional confinement. • Air on top confines mode tightly (large index difference). ◭◭ ◮◮ ◭ ◮ Back Close
SOI Waveguide Geometry [0 0 1] 5/56 [1 1 0] • SEM image of an SOI device; Izhaky et al., JSTQE, (2006). • Typically W ∼ 1 µm, H ∼ 1 µm, h ∼ H/2. • Dispersion normal at telecom wavelengths (λ 0 ∼ 2.2 µm). ◭◭ ◮◮ ◭ ◮ Back Close
Page 1 and 2: 1/56 Nonlinear effects in Silicon W
Page 3: Silicon Photonics • Silicon domin
Page 7 and 8: Major Nonlinear Effects • Self-Ph
Page 9 and 10: Third-order Nonlinear Susceptibilit
Page 11 and 12: Nonlinear Parameters • Refractive
Page 13 and 14: Free-Carrier Absorption (FCA) • L
Page 15 and 16: Self-Phase Modulation (SPM) • Ref
Page 17 and 18: Self-Phase Modulation and TPA • P
Page 19 and 20: Impact of Free-Carrier Generation S
Page 21 and 22: itted intensity but not in spectral
Page 23 and 24: Formation of Optical Solitons • S
Page 25 and 26: Path-Averaged Solitons • Perfect
Page 27 and 28: Numerical Simulations 0 0 −5 −5
Page 29 and 30: SC Generation in a microstructured
Page 31 and 32: SC Generation in Silicon Waveguides
Page 33 and 34: Impact of TPA on SC Generation Norm
Page 35 and 36: Cross-Phase Modulation • Consider
Page 37 and 38: XPM-Induced Switching 37/56 • A M
Page 39 and 40: XPM-Induced Switching 39/56 Boyraz
Page 41 and 42: Parametric Amplifiers • FWM can b
Page 43 and 44: FWM with Short Pump Pulses 43/56 Li
Page 45 and 46: Experimental Results (Single Pump)
Page 47 and 48: Experimental Results 47/56 Sharping
Page 49 and 50: Raman Amplifiers 49/56 Jalali et al
Page 51 and 52: Raman Lasers 51/56 Boyraz and Jalal
Page 53 and 54: CW Raman Amplifiers 53/56 Jones et
Page 55 and 56:
Concluding Remarks • Nonlinear ef
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