Surface and bulk passivation of multicrystalline silicon solar cells by ...

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63 Figure 3.13 shows that: 1) after the firing, the majority of the surface damage is healed; 2) Simultaneously, H migrates into bulk Si and interacts with defects and impurities. Α verification of H "storage" during nitridation and its subsequent diffusion is seen in Figure 3.14 [98]. This figure is a secondary ion mass spectrometry (SIMS) plot of H in a Si solar cell before and after annealing. Figure 3.14 clearly shows that the H is temporarily stored at the surface, and is then redistributed (limited by the detection sensitivity of H in the SIMS measurement) after annealing. Figure 3.14 The SIMS profiles of H in a solar cell introduced during a PECVD SiN coating before (red line) and after annealing (black line) [98]. The redistribution of H deep inside the cell can lead to excellent passivation and high device performance. Figure 3.15 shows the difference in the poly-Si solar cell performance with and without a PECVD SiN coating [99]. This exemplifies a significant increase in efficiency. Α good hydrogenation process can improve the cell efficiency
64 ranging from about 12% to about 16%. Currently, H passivation is extensively applied in me-Si solar cell manufacturing. Figure 3.15 Effect of PECVD on the internal quantum efficiency of the cell [99].
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Copyright Warning & Restrictions Th
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ABSTRACT SURFACE AND BULK PASSIVATI
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SURFACE AND BULK PASSIVATION OF MUL
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APPROVAL PAGE SURFACE AND BULK PASS
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Chuan Li, B.L. Sopori, P. Rupnowski
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ACKNOWLEDGEMENT The work presented
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TABLE OF CONTENTS (Continued) Chapt
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LIST OF TABLES Table Page 2.1 Posit
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LIST OF FIGURES (Continued) Figure
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LIST OF FIGURES (Continued) Figure
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2 percent; however, soon, more adva
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4 Figure 1.1 World solar module pro
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6 bond is called a hole. It too can
Page 27 and 28:
8 Figure 1.4 The I-V characteristic
Page 29 and 30:
10 First generation cells consist o
Page 31 and 32: 12 Basically, materials for manufac
Page 33 and 34: 14 Defects are generally categorize
Page 35 and 36: 16 copper, or nickel in concentrati
Page 37 and 38: 18 the SiNx:H layer during the ther
Page 39 and 40: CHAPTER 2 SILICON NITRIDE LAYER FOR
Page 41 and 42: 22 reflectance of polished Si can b
Page 43 and 44: 24 information is application-orien
Page 45 and 46: 26 film fed growth (EFG) ribbon sil
Page 47 and 48: 28 Figure 2.5 Deposition of SiΝ :
Page 49 and 50: 30 Figure 2.6 shows the dependence
Page 51 and 52: 32 atoms, the interface states are
Page 53 and 54: 34 2.5 Bulk Passivation of Si by Si
Page 55 and 56: 36 It was found that the bulk lifet
Page 57 and 58: CHAPTER 3 MODELING OF SURFACE RECOM
Page 59 and 60: 40 Figure 3.2 Schematic diagram of
Page 61 and 62: 42 σ and σp are the capture cross
Page 63 and 64: 44 Qsi — charge density induced i
Page 66 and 67: 47 Figure 3.5 The calculated depend
Page 68 and 69: 49 * 10 Λ m; m is in a range from
Page 70 and 71: 51 Na, sigma_n, sigma_p: enter x.xx
Page 72 and 73: 53 Figure 3.7 Measured Seff(Δn) de
Page 74 and 75: 55 curves converge to a single valu
Page 76 and 77: 57 seen that, initially Ss decrease
Page 78 and 79: 59 carrier recombination within the
Page 80 and 81: 61 recombination in the SCR influen
Page 84 and 85: CHAPTER 4 MINORITY-CARRIER LIFETIME
Page 86 and 87: 67 Figure 4.1 Α photograph of QSSP
Page 88 and 89: 69 work. The most convenient is 1 m
Page 90 and 91: 7Ι dependence of the minority carr
Page 92 and 93: 73 It was tempting to assume that l
Page 94 and 95: 75 resistivities and lifetime) do n
Page 96 and 97: 77 5.2 Objective An electronic mode
Page 98 and 99: 79 Figure 5.2 is a photograph of a
Page 100 and 101: 81 impurity-gettering methods which
Page 102 and 103: 83 distribution of local currents a
Page 104 and 105: 85 modeling. Wafers were selected f
Page 106 and 107: 87 Figure 5.5 A comparison of (a) d
Page 108 and 109: 89 alloying results in metallizatio
Page 110 and 111: 91 (i) Defect clusters are the prim
Page 112 and 113: 93 SiNX induced charge density on t
Page 114 and 115: APPENDIX I PROGRAMS TO CALCULATE SR
Page 116 and 117: 97 phin = -ΕΙ - 1 / beta * log(nd
Page 118 and 119: 99 ίter3 = 0 for xi=1 to nmax/2-1
Page 120 and 121: 101 input "output file name {XXXXXX
Page 122 and 123: 103 F (i) = (exp (beta * (phip - ph
Page 124 and 125: APPENDIX III COMPUTATIONAL METHOD F
Page 126 and 127: 107 where, dscr is the width of the
Page 128 and 129: REFERENCES 1. E. Becquerel , C. R.
Page 130 and 131: 44. L.L. Alt, S.W. Ing. Jr. and K.W
Page 132 and 133:
90. B.L. Sopori, Y. Zhang, and N.M.
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