Surface and bulk passivation of multicrystalline silicon solar cells by ...

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53 Figure 3.7 Measured Seff(Δn) dependence at the SiN X-passivated surfaces of three 1.5 (Ωcm FZ p-Si wafers. The SiN X films were fabricated by three different PECVD methods: low-frequency(100 kHz) direct PECVD, high-frequency (13.56 MHz) direct PECVD, and remote PECVD [56]. 3.2.2.2 Seff dependence on resistivity. Figure3.8 shows the calculated S SA as a function of the injection level Μ in the quasi neutral bulk for different wafer resistivities (1, 2, 3 and 5 Ω-cm) and p- and n-type silicon, respectively. For model calculations, a typical set of parameters for the dielectric-Si interface has been used. An interface state density, Dt of 5x10 10 cm 2 eV-1 , a positive fixed charge Qfof 1x1011m-2 and capture cross-sections for electrons and holes of 10 14 and 10 -16cm2, respectively, were taken from measurements reported in the literature [83]. Furthermore, an assumption was made that the interface states were uniformly distributed across the bandgap and that all states below midgap were donor-like states whereas all states above
54 midgap were acceptor-like states. It was also assumed that the capture cross-sections were energy independent. Figure 3.8 Calculated dependence of Seff for n-Si and p-Si surfaces as a function of injection level (Δn) for different wafer resistivities. D i1 5x 10 10 cm 2 eV-1, Qf=1 x 10 11 cm-2 . From Figure 3.8, the following observations can be drawn: i) The beneficial effect on Seff due to band bending, or field effect passivation depends strongly on the resistivity (doping concentration) of the Si wafers. If other parameters remain the same, the higher the resistivity (the lower doping concentration) of the Si wafers, the smaller the corresponding SRV. 2) Α clear difference in Seff between p- and n-type silicon under lowlevel injection conditions can be seen whereas, at high-level injection conditions, the
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Copyright Warning & Restrictions Th
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ABSTRACT SURFACE AND BULK PASSIVATI
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SURFACE AND BULK PASSIVATION OF MUL
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APPROVAL PAGE SURFACE AND BULK PASS
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Chuan Li, B.L. Sopori, P. Rupnowski
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ACKNOWLEDGEMENT The work presented
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TABLE OF CONTENTS (Continued) Chapt
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LIST OF TABLES Table Page 2.1 Posit
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LIST OF FIGURES (Continued) Figure
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LIST OF FIGURES (Continued) Figure
Page 21 and 22: 2 percent; however, soon, more adva
Page 23 and 24: 4 Figure 1.1 World solar module pro
Page 25 and 26: 6 bond is called a hole. It too can
Page 27 and 28: 8 Figure 1.4 The I-V characteristic
Page 29 and 30: 10 First generation cells consist o
Page 31 and 32: 12 Basically, materials for manufac
Page 33 and 34: 14 Defects are generally categorize
Page 35 and 36: 16 copper, or nickel in concentrati
Page 37 and 38: 18 the SiNx:H layer during the ther
Page 39 and 40: CHAPTER 2 SILICON NITRIDE LAYER FOR
Page 41 and 42: 22 reflectance of polished Si can b
Page 43 and 44: 24 information is application-orien
Page 45 and 46: 26 film fed growth (EFG) ribbon sil
Page 47 and 48: 28 Figure 2.5 Deposition of SiΝ :
Page 49 and 50: 30 Figure 2.6 shows the dependence
Page 51 and 52: 32 atoms, the interface states are
Page 53 and 54: 34 2.5 Bulk Passivation of Si by Si
Page 55 and 56: 36 It was found that the bulk lifet
Page 57 and 58: CHAPTER 3 MODELING OF SURFACE RECOM
Page 59 and 60: 40 Figure 3.2 Schematic diagram of
Page 61 and 62: 42 σ and σp are the capture cross
Page 63 and 64: 44 Qsi — charge density induced i
Page 66 and 67: 47 Figure 3.5 The calculated depend
Page 68 and 69: 49 * 10 Λ m; m is in a range from
Page 70 and 71: 51 Na, sigma_n, sigma_p: enter x.xx
Page 74 and 75: 55 curves converge to a single valu
Page 76 and 77: 57 seen that, initially Ss decrease
Page 78 and 79: 59 carrier recombination within the
Page 80 and 81: 61 recombination in the SCR influen
Page 82 and 83: 63 Figure 3.13 shows that: 1) after
Page 84 and 85: CHAPTER 4 MINORITY-CARRIER LIFETIME
Page 86 and 87: 67 Figure 4.1 Α photograph of QSSP
Page 88 and 89: 69 work. The most convenient is 1 m
Page 90 and 91: 7Ι dependence of the minority carr
Page 92 and 93: 73 It was tempting to assume that l
Page 94 and 95: 75 resistivities and lifetime) do n
Page 96 and 97: 77 5.2 Objective An electronic mode
Page 98 and 99: 79 Figure 5.2 is a photograph of a
Page 100 and 101: 81 impurity-gettering methods which
Page 102 and 103: 83 distribution of local currents a
Page 104 and 105: 85 modeling. Wafers were selected f
Page 106 and 107: 87 Figure 5.5 A comparison of (a) d
Page 108 and 109: 89 alloying results in metallizatio
Page 110 and 111: 91 (i) Defect clusters are the prim
Page 112 and 113: 93 SiNX induced charge density on t
Page 114 and 115: APPENDIX I PROGRAMS TO CALCULATE SR
Page 116 and 117: 97 phin = -ΕΙ - 1 / beta * log(nd
Page 118 and 119: 99 ίter3 = 0 for xi=1 to nmax/2-1
Page 120 and 121: 101 input "output file name {XXXXXX
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103 F (i) = (exp (beta * (phip - ph
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APPENDIX III COMPUTATIONAL METHOD F
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107 where, dscr is the width of the
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REFERENCES 1. E. Becquerel , C. R.
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44. L.L. Alt, S.W. Ing. Jr. and K.W
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90. B.L. Sopori, Y. Zhang, and N.M.
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