Surface and bulk passivation of multicrystalline silicon solar cells by ...

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47 Figure 3.5 The calculated dependence of effective SRV (Serf) on the fixed positive charge density (QoX) for different interface-state densities. The results are shown for two injection levels: (a) 10 14cm 3 and (b) 1016cm-3 [84] . 3.2 Modeling of Surface Recombination Velocity at SiN X Si Interface It was discovered that the surface passivation of PECVD-deposited SiN X films showed a pronounced injection-level dependence of the effective surface recombination velocity (Serf (Δn)), which is similar to that for thermal oxides [83, 85, 86]. This property implies a similar recombination mechanism for the SiN X-Si interface, although it is known that Dίt
48 and Qf at SiΝ -Si interface are approximately one order in magnitude higher than that for the Si-SiO 2 interface. Similarly, the deposition of SiNX layers on silicon substrates lead to the formation of a space charge region at the interface characterized by a fixed positive charge density (Qf) of the order of 1012cm-2. In p-type Si, a depletion/inversion layer is formed, while in n-type Si, the positively charged insulator attracts majority carriers and repels minority carriers. Hence, an accumulation layer is formed. 3.2.1 Program for SRV Calculations Based on the extended SRH formalism, a program is written to calculate the SRV at dielectric film-Si interface. A brief description of the algorithm and methodology of this program is as follows: There are only two differences in the programs between the n-Si and p-Si: 1. The p-type uses the Na input parameter while the n-type uses the Nd input parameter; 2. The p and n types use slightly different equations to determine the bandbending (phi_s), recombination rate (Us), surface recombination velocity (Se) values. It is the same exact numerical method for both types. The method: 1. The programs asks for input parameters (see note below); 2. The programs have an outer and inner loop: the outer loop is controlled by the m value while the inner loop is controlled by the n value; together, these m, n parameters control the energy at which the phis. Us and Se will be calculated; the formula is delta n
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Copyright Warning & Restrictions Th
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ABSTRACT SURFACE AND BULK PASSIVATI
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SURFACE AND BULK PASSIVATION OF MUL
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APPROVAL PAGE SURFACE AND BULK PASS
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Chuan Li, B.L. Sopori, P. Rupnowski
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ACKNOWLEDGEMENT The work presented
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TABLE OF CONTENTS (Continued) Chapt
Page 15 and 16: LIST OF TABLES Table Page 2.1 Posit
Page 17 and 18: LIST OF FIGURES (Continued) Figure
Page 19 and 20: LIST OF FIGURES (Continued) Figure
Page 21 and 22: 2 percent; however, soon, more adva
Page 23 and 24: 4 Figure 1.1 World solar module pro
Page 25 and 26: 6 bond is called a hole. It too can
Page 27 and 28: 8 Figure 1.4 The I-V characteristic
Page 29 and 30: 10 First generation cells consist o
Page 31 and 32: 12 Basically, materials for manufac
Page 33 and 34: 14 Defects are generally categorize
Page 35 and 36: 16 copper, or nickel in concentrati
Page 37 and 38: 18 the SiNx:H layer during the ther
Page 39 and 40: CHAPTER 2 SILICON NITRIDE LAYER FOR
Page 41 and 42: 22 reflectance of polished Si can b
Page 43 and 44: 24 information is application-orien
Page 45 and 46: 26 film fed growth (EFG) ribbon sil
Page 47 and 48: 28 Figure 2.5 Deposition of SiΝ :
Page 49 and 50: 30 Figure 2.6 shows the dependence
Page 51 and 52: 32 atoms, the interface states are
Page 53 and 54: 34 2.5 Bulk Passivation of Si by Si
Page 55 and 56: 36 It was found that the bulk lifet
Page 57 and 58: CHAPTER 3 MODELING OF SURFACE RECOM
Page 59 and 60: 40 Figure 3.2 Schematic diagram of
Page 61 and 62: 42 σ and σp are the capture cross
Page 63 and 64: 44 Qsi — charge density induced i
Page 68 and 69: 49 * 10 Λ m; m is in a range from
Page 70 and 71: 51 Na, sigma_n, sigma_p: enter x.xx
Page 72 and 73: 53 Figure 3.7 Measured Seff(Δn) de
Page 74 and 75: 55 curves converge to a single valu
Page 76 and 77: 57 seen that, initially Ss decrease
Page 78 and 79: 59 carrier recombination within the
Page 80 and 81: 61 recombination in the SCR influen
Page 82 and 83: 63 Figure 3.13 shows that: 1) after
Page 84 and 85: CHAPTER 4 MINORITY-CARRIER LIFETIME
Page 86 and 87: 67 Figure 4.1 Α photograph of QSSP
Page 88 and 89: 69 work. The most convenient is 1 m
Page 90 and 91: 7Ι dependence of the minority carr
Page 92 and 93: 73 It was tempting to assume that l
Page 94 and 95: 75 resistivities and lifetime) do n
Page 96 and 97: 77 5.2 Objective An electronic mode
Page 98 and 99: 79 Figure 5.2 is a photograph of a
Page 100 and 101: 81 impurity-gettering methods which
Page 102 and 103: 83 distribution of local currents a
Page 104 and 105: 85 modeling. Wafers were selected f
Page 106 and 107: 87 Figure 5.5 A comparison of (a) d
Page 108 and 109: 89 alloying results in metallizatio
Page 110 and 111: 91 (i) Defect clusters are the prim
Page 112 and 113: 93 SiNX induced charge density on t
Page 114 and 115: APPENDIX I PROGRAMS TO CALCULATE SR
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97 phin = -ΕΙ - 1 / beta * log(nd
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99 ίter3 = 0 for xi=1 to nmax/2-1
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101 input "output file name {XXXXXX
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103 F (i) = (exp (beta * (phip - ph
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APPENDIX III COMPUTATIONAL METHOD F
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107 where, dscr is the width of the
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REFERENCES 1. E. Becquerel , C. R.
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44. L.L. Alt, S.W. Ing. Jr. and K.W
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90. B.L. Sopori, Y. Zhang, and N.M.
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