Surface and bulk passivation of multicrystalline silicon solar cells by ...
Surface and bulk passivation of multicrystalline silicon solar cells by ...
Surface and bulk passivation of multicrystalline silicon solar cells by ...
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43<br />
In 1988, Girisch et. al. [82] introduced an extended SRH formalism, which<br />
included the effects <strong>of</strong> b<strong>and</strong> bending due to fixed insulator charges <strong>and</strong> charged interface<br />
states.<br />
In Figure 3.3, an illustration <strong>of</strong> the dielectric-semiconductor system under nonequilibrium<br />
conditions is presented. Figure 3.3 shows that, as a result <strong>of</strong> positive fixed<br />
charge (Qt), the energy b<strong>and</strong>s bend down <strong>and</strong> a space charge region is formed.<br />
Figure 3.3 Charge distribution <strong>and</strong> b<strong>and</strong> diagram at the dielectric-semiconductor<br />
interface under non-equilibrium conditions. The non-equilibrίum conditions<br />
are indicated <strong>by</strong> the separation <strong>of</strong> electron <strong>and</strong> hole quasi—Fermi levels Φn <strong>and</strong><br />
. Note that the surface potential ψs is positive when the energy b<strong>and</strong>s bend<br />
down.