Surface and bulk passivation of multicrystalline silicon solar cells by ...

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as compared to surface recombination. The majority of surface damage can be healed by rapid thermal annealing (RTA). Therefore, less minority-carrier recombination in the SCR is expected after the firing treatment of Si solar cells. Based on the damaged layer and trapping/detrapping theory, a semi-quantitative hydrogen transportation model of H migration from SiΝ X:Η layer into Si is presented. The model is verified by secondary ion mass spectrometry (SIMS) measurements of H in Si solar cells before and after annealing. The redistribution of Η deep inside the cells can lead to excellent bulk passivation and high device performance. Experimental results of the reproducibility of minority-carrier life measurement using QSSPCD technique indicate that wafer preparation requires a well-cleaned wafer and high quality surface passivation. In this study, a novel laboratory procedure for wafer preparation is proposed. Theoretical and experimental studies on the influence of defect clusters on the performance of me-Si solar. cell have been performed. In a typical cell, the defect clusters produce an efficiency loss of 3 to 4 percent,
SURFACE AND BULK PASSIVATION OF MULTICRYSTALLINE SILICON SOLAR CELLS BY SILICON NITRIDE (H) LAYER: MODELING AND EXPERIMENTS by Chuan Li A Dissertation Submitted to the Faculty of New Jersey Institute of Technology in Partial Fulfillment of the Requirements for the Degree of Doctor of Philosophy in Materials Science and Engineering Interdisciplinary Program in Materials Science and Engineering January 2009
Page 1 and 2: Copyright Warning & Restrictions Th
Page 3: ABSTRACT SURFACE AND BULK PASSIVATI
Page 7 and 8: APPROVAL PAGE SURFACE AND BULK PASS
Page 9 and 10: Chuan Li, B.L. Sopori, P. Rupnowski
Page 11 and 12: ACKNOWLEDGEMENT The work presented
Page 13 and 14: TABLE OF CONTENTS (Continued) Chapt
Page 15 and 16: LIST OF TABLES Table Page 2.1 Posit
Page 17 and 18: LIST OF FIGURES (Continued) Figure
Page 19 and 20: LIST OF FIGURES (Continued) Figure
Page 21 and 22: 2 percent; however, soon, more adva
Page 23 and 24: 4 Figure 1.1 World solar module pro
Page 25 and 26: 6 bond is called a hole. It too can
Page 27 and 28: 8 Figure 1.4 The I-V characteristic
Page 29 and 30: 10 First generation cells consist o
Page 31 and 32: 12 Basically, materials for manufac
Page 33 and 34: 14 Defects are generally categorize
Page 35 and 36: 16 copper, or nickel in concentrati
Page 37 and 38: 18 the SiNx:H layer during the ther
Page 39 and 40: CHAPTER 2 SILICON NITRIDE LAYER FOR
Page 41 and 42: 22 reflectance of polished Si can b
Page 43 and 44: 24 information is application-orien
Page 45 and 46: 26 film fed growth (EFG) ribbon sil
Page 47 and 48: 28 Figure 2.5 Deposition of SiΝ :
Page 49 and 50: 30 Figure 2.6 shows the dependence
Page 51 and 52: 32 atoms, the interface states are
Page 53 and 54: 34 2.5 Bulk Passivation of Si by Si
Page 55 and 56:
36 It was found that the bulk lifet
Page 57 and 58:
CHAPTER 3 MODELING OF SURFACE RECOM
Page 59 and 60:
40 Figure 3.2 Schematic diagram of
Page 61 and 62:
42 σ and σp are the capture cross
Page 63 and 64:
44 Qsi — charge density induced i
Page 66 and 67:
47 Figure 3.5 The calculated depend
Page 68 and 69:
49 * 10 Λ m; m is in a range from
Page 70 and 71:
51 Na, sigma_n, sigma_p: enter x.xx
Page 72 and 73:
53 Figure 3.7 Measured Seff(Δn) de
Page 74 and 75:
55 curves converge to a single valu
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57 seen that, initially Ss decrease
Page 78 and 79:
59 carrier recombination within the
Page 80 and 81:
61 recombination in the SCR influen
Page 82 and 83:
63 Figure 3.13 shows that: 1) after
Page 84 and 85:
CHAPTER 4 MINORITY-CARRIER LIFETIME
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67 Figure 4.1 Α photograph of QSSP
Page 88 and 89:
69 work. The most convenient is 1 m
Page 90 and 91:
7Ι dependence of the minority carr
Page 92 and 93:
73 It was tempting to assume that l
Page 94 and 95:
75 resistivities and lifetime) do n
Page 96 and 97:
77 5.2 Objective An electronic mode
Page 98 and 99:
79 Figure 5.2 is a photograph of a
Page 100 and 101:
81 impurity-gettering methods which
Page 102 and 103:
83 distribution of local currents a
Page 104 and 105:
85 modeling. Wafers were selected f
Page 106 and 107:
87 Figure 5.5 A comparison of (a) d
Page 108 and 109:
89 alloying results in metallizatio
Page 110 and 111:
91 (i) Defect clusters are the prim
Page 112 and 113:
93 SiNX induced charge density on t
Page 114 and 115:
APPENDIX I PROGRAMS TO CALCULATE SR
Page 116 and 117:
97 phin = -ΕΙ - 1 / beta * log(nd
Page 118 and 119:
99 ίter3 = 0 for xi=1 to nmax/2-1
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101 input "output file name {XXXXXX
Page 122 and 123:
103 F (i) = (exp (beta * (phip - ph
Page 124 and 125:
APPENDIX III COMPUTATIONAL METHOD F
Page 126 and 127:
107 where, dscr is the width of the
Page 128 and 129:
REFERENCES 1. E. Becquerel , C. R.
Page 130 and 131:
44. L.L. Alt, S.W. Ing. Jr. and K.W
Page 132 and 133:
90. B.L. Sopori, Y. Zhang, and N.M.
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