Surface and bulk passivation of multicrystalline silicon solar cells by ...
Surface and bulk passivation of multicrystalline silicon solar cells by ... Surface and bulk passivation of multicrystalline silicon solar cells by ...
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ABSTRACT SURFACE AND BULK PASSIVATION OF MULTICRYSTALLINE SILICON SOLAR CELLS BY SILICON NITRIDE (H) LAYER: MODELING AND EXPERIMENTS by Chuan Li The objective of this dissertation is to study passivation effects and mechanisms in Si solar cells, specifically, the surface and bulk passivation by hydrogen-rich PECVD silicon nitride (SiΝ :Η) antireflection layer on multicrystalline silicon (me-Si) solar cells. The passivation of silicon surface can be achieved in two ways: by field-effect passivation and/or by neutralization of interface states. In other words, the deposition should result in a high value of fixed charge, Qf and /or a low value of interface state density, D1. The surface recombination velocity can be described by Shockley-Read-Hall (SRH) statistics. Current SRH formalisms have failed to explain the surface recombination mechanism in terms of injection level dependence as has been observed by lifetime measurements. Previous SRH modeling result shows that very high Qf (up to several 10 12/cm2) on the surface of Si wafer, induced by SiN X:H layer, leads to no injection level dependence of surface recombination velocity (SRV), which is in contradiction to experimental results. An alternative approach is needed to address this problem. A modified SRH formalism which includes the carrier recombination in the space-charge region was developed in this thesis to evaluate the recombination mechanism at SiΝ :Η-Si interface. Numerical modeling results indicate that, at low injection-levels, carrier recombination in the damaged layer is the dominant mechanism
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- Page 9 and 10: Chuan Li, B.L. Sopori, P. Rupnowski
- Page 11 and 12: ACKNOWLEDGEMENT The work presented
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The Van Houten library has removed some <strong>of</strong><br />
the personal information <strong>and</strong> all signatures from<br />
the approval page <strong>and</strong> biographical sketches <strong>of</strong><br />
theses <strong>and</strong> dissertations in order to protect the<br />
identity <strong>of</strong> NJIT graduates <strong>and</strong> faculty.
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