Surface and bulk passivation of multicrystalline silicon solar cells by ...

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TABLE OF CONTENTS (Continued) Chapter Page 5.3 Characterization of Defect Clusters 77 5.4 Influence of Defect Clusters. on Solar Cells 81 5 .4.1 Theory . ... ............................................................................... 8I .. 5.4.2 Experimental.. ................. 84 5..4.3. . Results ...................... 87 6 CONCLUSIONS.AND FUTURE DIRECTIONS ...... . . . .... 92 6.1 . Conclusions 92 6.2 Future Directions ......... . ........ , .. , . , ........... , ................................. ,.... 93 APPENDIX I PROGRAM TO CALCULATE SRV USING SRH FORMALISM . . . N TYPE 95 APPENDIX II PROGRAM TO CALCULATE SRV USING SRH FORMALISM PTYPE .......................:.:..................,,...........,.......,....., 100 APPENDIX III COMPUTATIONAL METHOD OF RECOMBINATION VECOCITY IN SCR 105 APPENDIX IV SUMMARY OF DIFFUSION PARAMETERS OF H IN SI, SI3N4 AND SIO2 I08 REFERENCES 109 χ
LIST OF TABLES Table Page 2.1 Positive Fixed Charge and Interface-Trap-Density of As-Deposited and Annealed SiN-Si Interface [68] 33 5.1 A Summary of Measured and Calculated Results for Two Typical Solar Cells of Three Groups 88 xf
Page 1 and 2: Copyright Warning & Restrictions Th
Page 3 and 4: ABSTRACT SURFACE AND BULK PASSIVATI
Page 5 and 6: SURFACE AND BULK PASSIVATION OF MUL
Page 7 and 8: APPROVAL PAGE SURFACE AND BULK PASS
Page 9 and 10: Chuan Li, B.L. Sopori, P. Rupnowski
Page 11 and 12: ACKNOWLEDGEMENT The work presented
Page 13: TABLE OF CONTENTS (Continued) Chapt
Page 17 and 18: LIST OF FIGURES (Continued) Figure
Page 19 and 20: LIST OF FIGURES (Continued) Figure
Page 21 and 22: 2 percent; however, soon, more adva
Page 23 and 24: 4 Figure 1.1 World solar module pro
Page 25 and 26: 6 bond is called a hole. It too can
Page 27 and 28: 8 Figure 1.4 The I-V characteristic
Page 29 and 30: 10 First generation cells consist o
Page 31 and 32: 12 Basically, materials for manufac
Page 33 and 34: 14 Defects are generally categorize
Page 35 and 36: 16 copper, or nickel in concentrati
Page 37 and 38: 18 the SiNx:H layer during the ther
Page 39 and 40: CHAPTER 2 SILICON NITRIDE LAYER FOR
Page 41 and 42: 22 reflectance of polished Si can b
Page 43 and 44: 24 information is application-orien
Page 45 and 46: 26 film fed growth (EFG) ribbon sil
Page 47 and 48: 28 Figure 2.5 Deposition of SiΝ :
Page 49 and 50: 30 Figure 2.6 shows the dependence
Page 51 and 52: 32 atoms, the interface states are
Page 53 and 54: 34 2.5 Bulk Passivation of Si by Si
Page 55 and 56: 36 It was found that the bulk lifet
Page 57 and 58: CHAPTER 3 MODELING OF SURFACE RECOM
Page 59 and 60: 40 Figure 3.2 Schematic diagram of
Page 61 and 62: 42 σ and σp are the capture cross
Page 63 and 64: 44 Qsi — charge density induced i
Page 66 and 67:
47 Figure 3.5 The calculated depend
Page 68 and 69:
49 * 10 Λ m; m is in a range from
Page 70 and 71:
51 Na, sigma_n, sigma_p: enter x.xx
Page 72 and 73:
53 Figure 3.7 Measured Seff(Δn) de
Page 74 and 75:
55 curves converge to a single valu
Page 76 and 77:
57 seen that, initially Ss decrease
Page 78 and 79:
59 carrier recombination within the
Page 80 and 81:
61 recombination in the SCR influen
Page 82 and 83:
63 Figure 3.13 shows that: 1) after
Page 84 and 85:
CHAPTER 4 MINORITY-CARRIER LIFETIME
Page 86 and 87:
67 Figure 4.1 Α photograph of QSSP
Page 88 and 89:
69 work. The most convenient is 1 m
Page 90 and 91:
7Ι dependence of the minority carr
Page 92 and 93:
73 It was tempting to assume that l
Page 94 and 95:
75 resistivities and lifetime) do n
Page 96 and 97:
77 5.2 Objective An electronic mode
Page 98 and 99:
79 Figure 5.2 is a photograph of a
Page 100 and 101:
81 impurity-gettering methods which
Page 102 and 103:
83 distribution of local currents a
Page 104 and 105:
85 modeling. Wafers were selected f
Page 106 and 107:
87 Figure 5.5 A comparison of (a) d
Page 108 and 109:
89 alloying results in metallizatio
Page 110 and 111:
91 (i) Defect clusters are the prim
Page 112 and 113:
93 SiNX induced charge density on t
Page 114 and 115:
APPENDIX I PROGRAMS TO CALCULATE SR
Page 116 and 117:
97 phin = -ΕΙ - 1 / beta * log(nd
Page 118 and 119:
99 ίter3 = 0 for xi=1 to nmax/2-1
Page 120 and 121:
101 input "output file name {XXXXXX
Page 122 and 123:
103 F (i) = (exp (beta * (phip - ph
Page 124 and 125:
APPENDIX III COMPUTATIONAL METHOD F
Page 126 and 127:
107 where, dscr is the width of the
Page 128 and 129:
REFERENCES 1. E. Becquerel , C. R.
Page 130 and 131:
44. L.L. Alt, S.W. Ing. Jr. and K.W
Page 132 and 133:
90. B.L. Sopori, Y. Zhang, and N.M.
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