Surface and bulk passivation of multicrystalline silicon solar cells by ...
Surface and bulk passivation of multicrystalline silicon solar cells by ... Surface and bulk passivation of multicrystalline silicon solar cells by ...
TABLE OF CONTENTS (Continued) Chapter Page 5.3 Characterization of Defect Clusters 77 5.4 Influence of Defect Clusters. on Solar Cells 81 5 .4.1 Theory . ... ............................................................................... 8I .. 5.4.2 Experimental.. ................. 84 5..4.3. . Results ...................... 87 6 CONCLUSIONS.AND FUTURE DIRECTIONS ...... . . . .... 92 6.1 . Conclusions 92 6.2 Future Directions ......... . ........ , .. , . , ........... , ................................. ,.... 93 APPENDIX I PROGRAM TO CALCULATE SRV USING SRH FORMALISM . . . N TYPE 95 APPENDIX II PROGRAM TO CALCULATE SRV USING SRH FORMALISM PTYPE .......................:.:..................,,...........,.......,....., 100 APPENDIX III COMPUTATIONAL METHOD OF RECOMBINATION VECOCITY IN SCR 105 APPENDIX IV SUMMARY OF DIFFUSION PARAMETERS OF H IN SI, SI3N4 AND SIO2 I08 REFERENCES 109 χ
LIST OF TABLES Table Page 2.1 Positive Fixed Charge and Interface-Trap-Density of As-Deposited and Annealed SiN-Si Interface [68] 33 5.1 A Summary of Measured and Calculated Results for Two Typical Solar Cells of Three Groups 88 xf
- Page 1 and 2: Copyright Warning & Restrictions Th
- Page 3 and 4: ABSTRACT SURFACE AND BULK PASSIVATI
- Page 5 and 6: SURFACE AND BULK PASSIVATION OF MUL
- Page 7 and 8: APPROVAL PAGE SURFACE AND BULK PASS
- Page 9 and 10: Chuan Li, B.L. Sopori, P. Rupnowski
- Page 11 and 12: ACKNOWLEDGEMENT The work presented
- Page 13: TABLE OF CONTENTS (Continued) Chapt
- Page 17 and 18: LIST OF FIGURES (Continued) Figure
- Page 19 and 20: LIST OF FIGURES (Continued) Figure
- Page 21 and 22: 2 percent; however, soon, more adva
- Page 23 and 24: 4 Figure 1.1 World solar module pro
- Page 25 and 26: 6 bond is called a hole. It too can
- Page 27 and 28: 8 Figure 1.4 The I-V characteristic
- Page 29 and 30: 10 First generation cells consist o
- Page 31 and 32: 12 Basically, materials for manufac
- Page 33 and 34: 14 Defects are generally categorize
- Page 35 and 36: 16 copper, or nickel in concentrati
- Page 37 and 38: 18 the SiNx:H layer during the ther
- Page 39 and 40: CHAPTER 2 SILICON NITRIDE LAYER FOR
- Page 41 and 42: 22 reflectance of polished Si can b
- Page 43 and 44: 24 information is application-orien
- Page 45 and 46: 26 film fed growth (EFG) ribbon sil
- Page 47 and 48: 28 Figure 2.5 Deposition of SiΝ :
- Page 49 and 50: 30 Figure 2.6 shows the dependence
- Page 51 and 52: 32 atoms, the interface states are
- Page 53 and 54: 34 2.5 Bulk Passivation of Si by Si
- Page 55 and 56: 36 It was found that the bulk lifet
- Page 57 and 58: CHAPTER 3 MODELING OF SURFACE RECOM
- Page 59 and 60: 40 Figure 3.2 Schematic diagram of
- Page 61 and 62: 42 σ and σp are the capture cross
- Page 63 and 64: 44 Qsi — charge density induced i
TABLE OF CONTENTS<br />
(Continued)<br />
Chapter<br />
Page<br />
5.3 Characterization <strong>of</strong> Defect Clusters 77<br />
5.4 Influence <strong>of</strong> Defect Clusters. on Solar Cells 81<br />
5 .4.1 Theory . ... ............................................................................... 8I<br />
.. 5.4.2 Experimental.. ................. 84<br />
5..4.3. . Results ...................... 87<br />
6 CONCLUSIONS.AND FUTURE DIRECTIONS ...... . . . .... 92<br />
6.1 . Conclusions 92<br />
6.2 Future Directions ......... . ........ , .. , . , ........... , ................................. ,.... 93<br />
APPENDIX I PROGRAM TO CALCULATE SRV USING SRH FORMALISM<br />
. . . N TYPE 95<br />
APPENDIX II PROGRAM TO CALCULATE SRV USING SRH FORMALISM<br />
PTYPE .......................:.:..................,,...........,.......,....., 100<br />
APPENDIX III COMPUTATIONAL METHOD OF RECOMBINATION<br />
VECOCITY IN SCR 105<br />
APPENDIX IV SUMMARY OF DIFFUSION PARAMETERS OF H IN SI, SI3N4<br />
AND SIO2<br />
I08<br />
REFERENCES 109<br />
χ
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