Surface and bulk passivation of multicrystalline silicon solar cells by ...

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90. B.L. Sopori, Y. Zhang, and N.M. Ravindra, J. Electron. Mater. 30, 1616 (2001). 91. B.L. Sopori, J. Electron. Mater. 34 (2005). 92. C. Li, B.L. Sopori, P. Rupnowski, A.T. Fiory, N.M. Ravindra, Materials Science and Technology Conference and Exhibition, Cincinnati, ΟΗ (2006). 93. J. Schmidt, J.D. Moschner, J. Henze, S. Dauwe and R. Hezel, 19th European Photovoltaic Solar Energy Conference, Paris, France (2004). 94. A. Many, Υ. Goldstein, and N.B. Grover, Semiconductor Surfaces, North-Holland Publishing Company, Amsterdam (1965). 95. W. Winch. Semiconductor Surfaces and Interfaces. Springer Series in Surface Sciences. Springer-Verlag Berlin Heidelberg, 3rd edition (2001). 96. S. Dauwe, Ph.D. thesis, University of Hannover, Germany (2004). 97. B.L. Sopori, R. Reedy, K. Jones, L. Gedvilas, B. Keyes, Y. Van, M. Al-Jassim, V. Velundur, and A. Rohatgi, Proc. 4th World Conference on Photovoltaic Energy Conversion, Hawaii, May (2006). 98. J.A. Bragagnolo, B.L. Sopori, E. Ester, T. Hashimoto, and I. Sugiyama, 12th Workshop on Crystalline Silicon Solar Cell Materials and Processes (2002). 99. B.L. Sopori, X. Deng, J.P. Benner, A. Rohatgi, P. Sana, S.K. Estreicher, Y.K. Park, and M.A. Roberson, Solar Energy Mater. & Sol. Cells 41/42, 159 (1996). 100.R. A. Sinton and A. Cusvas, Appl. Phys. Lett. 69, 2510 (1996). 101.T.S. Horanyi et. al., Applied Surface Science 63 306-311 (1993). 102.M'saad, Hichem et. al., J. Electrochem. Soc., 142, (1995). 103. 0. Palais et. al., The European Physical Journal: Appl. Phys. 10, 157-162 (2000). 104.Royea, J. William et. al., Appl. Phys. Lett., 77 (2000). 105.D.H. Macdonald et. al., J. Appl. Phys, 95 (2004). 106.Μ. Bail and R. Brendel, 16th European Photovoltaic Solar Energy Conference, Glasgow, UK, May (2000). 107.A. Buczkowski et. al., J. Electrochem. Soc., 140 (1993). 108.B.L. Sopori, P. Rupnowski, J. Appel, V. Mehta, C. Li, and S. Johnston, 33rd IEEE Photovoltaic Specialists Conference, San Diego, California, May 11-16 (2008). 109. B.L. Sopori, Proc. ICDS-19, Trans Tech Pub., Edited by G. Davies and M.H. Nazare, 527 (1997). 113
110.PVSCAN uses optical scattering from a defect-etched wafer to statistically count defects. It is also fitted with capabilities to make LBIC and reflectance measurements at 0.63 μm and 0.98 μm. It is available from GT Solar Technologies, Nashua, NH 03054. Also, see B.L. Sopori, US Patent 5,581,346. 111.B.L. Sopori, J. Electrochem. Soc. 131, 667 (1984). 112.B.L. Sopori, C. Li, S. Narayanan, and D. Carlson, Proc. MRS 864, 233 (2005). 113.T. Buonassisi, O. F. Vyvenko, A. A. Istratov, E. R. Weber, G. Hahn, D. Sontag, J. P. Rakotoniaina, O. Breitenstein, J. Isenberg, and R. Schindler, J. Appl. Phys. 95, 1556 (2004). 114.B.L. Sopori and R. A. Murphy, Proc. 12th European Photovoltaic Solar Energy Conference, Amsterdam, the Netherlands, 1797 (1994). 115.J.G. Fossum and F.A. Lindholm., IEEE Trans. ED-27, 692(1980). 116. B.L. Sopori, R.A. Murphy, and C. Marshall, Proc. the 23rd IEEE Photovoltaic Specialists Conference, Louisville, Kentucky, May 10-14, 190 (1993). 117.B.L. Sopori, App!. Phys. Lett. 52, 1718 (1988). 114
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Copyright Warning & Restrictions Th
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ABSTRACT SURFACE AND BULK PASSIVATI
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SURFACE AND BULK PASSIVATION OF MUL
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APPROVAL PAGE SURFACE AND BULK PASS
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Chuan Li, B.L. Sopori, P. Rupnowski
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ACKNOWLEDGEMENT The work presented
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TABLE OF CONTENTS (Continued) Chapt
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LIST OF TABLES Table Page 2.1 Posit
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LIST OF FIGURES (Continued) Figure
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LIST OF FIGURES (Continued) Figure
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2 percent; however, soon, more adva
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4 Figure 1.1 World solar module pro
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6 bond is called a hole. It too can
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8 Figure 1.4 The I-V characteristic
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10 First generation cells consist o
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12 Basically, materials for manufac
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14 Defects are generally categorize
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16 copper, or nickel in concentrati
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18 the SiNx:H layer during the ther
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CHAPTER 2 SILICON NITRIDE LAYER FOR
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22 reflectance of polished Si can b
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24 information is application-orien
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26 film fed growth (EFG) ribbon sil
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28 Figure 2.5 Deposition of SiΝ :
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30 Figure 2.6 shows the dependence
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32 atoms, the interface states are
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34 2.5 Bulk Passivation of Si by Si
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36 It was found that the bulk lifet
Page 57 and 58:
CHAPTER 3 MODELING OF SURFACE RECOM
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40 Figure 3.2 Schematic diagram of
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42 σ and σp are the capture cross
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44 Qsi — charge density induced i
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47 Figure 3.5 The calculated depend
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49 * 10 Λ m; m is in a range from
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51 Na, sigma_n, sigma_p: enter x.xx
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53 Figure 3.7 Measured Seff(Δn) de
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55 curves converge to a single valu
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57 seen that, initially Ss decrease
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59 carrier recombination within the
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61 recombination in the SCR influen
Page 82 and 83: 63 Figure 3.13 shows that: 1) after
Page 84 and 85: CHAPTER 4 MINORITY-CARRIER LIFETIME
Page 86 and 87: 67 Figure 4.1 Α photograph of QSSP
Page 88 and 89: 69 work. The most convenient is 1 m
Page 90 and 91: 7Ι dependence of the minority carr
Page 92 and 93: 73 It was tempting to assume that l
Page 94 and 95: 75 resistivities and lifetime) do n
Page 96 and 97: 77 5.2 Objective An electronic mode
Page 98 and 99: 79 Figure 5.2 is a photograph of a
Page 100 and 101: 81 impurity-gettering methods which
Page 102 and 103: 83 distribution of local currents a
Page 104 and 105: 85 modeling. Wafers were selected f
Page 106 and 107: 87 Figure 5.5 A comparison of (a) d
Page 108 and 109: 89 alloying results in metallizatio
Page 110 and 111: 91 (i) Defect clusters are the prim
Page 112 and 113: 93 SiNX induced charge density on t
Page 114 and 115: APPENDIX I PROGRAMS TO CALCULATE SR
Page 116 and 117: 97 phin = -ΕΙ - 1 / beta * log(nd
Page 118 and 119: 99 ίter3 = 0 for xi=1 to nmax/2-1
Page 120 and 121: 101 input "output file name {XXXXXX
Page 122 and 123: 103 F (i) = (exp (beta * (phip - ph
Page 124 and 125: APPENDIX III COMPUTATIONAL METHOD F
Page 126 and 127: 107 where, dscr is the width of the
Page 128 and 129: REFERENCES 1. E. Becquerel , C. R.
Page 130 and 131: 44. L.L. Alt, S.W. Ing. Jr. and K.W
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