Surface and bulk passivation of multicrystalline silicon solar cells by ...

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107 where, dscr is the width of the space-charge region: dscr = βλD J ., μ F d ψ (9) Approach: 1. Find by the iterative calculation proposed by Girisch et al. 2. Solve Eq. (1) 3. Solve Eq. (5) 4. solve Eq.(4) numerically
APPENDIX IV SUMMARY OF DIFFUSION PARAMETERS OF H IN Si, Si 3N4 AND SiO2 Medium D0 (cm2/ S) Ea (eV) Si 8.3x1011 [1] 0.48 (atom), 0.78 (molecule) [1] Si3N4 5x108 [2] 1.0 [2] SiO2 3x10 16 [3] 0.73 [3] D =D0 exρ References: kT [1] Vi Zhang's doctoral thesis, New Jersey Institute of Technology (2002). [2] S.S. He and V. L. Shannon, Solid-State and Integrated Circuit Technology, 4th International Conference, 269-271 (1995). [3] D. Fink et. al. Appl. Phys. A 61, 381-388 (1995). 108
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Copyright Warning & Restrictions Th
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ABSTRACT SURFACE AND BULK PASSIVATI
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SURFACE AND BULK PASSIVATION OF MUL
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APPROVAL PAGE SURFACE AND BULK PASS
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Chuan Li, B.L. Sopori, P. Rupnowski
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ACKNOWLEDGEMENT The work presented
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TABLE OF CONTENTS (Continued) Chapt
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LIST OF TABLES Table Page 2.1 Posit
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LIST OF FIGURES (Continued) Figure
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LIST OF FIGURES (Continued) Figure
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2 percent; however, soon, more adva
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4 Figure 1.1 World solar module pro
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6 bond is called a hole. It too can
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8 Figure 1.4 The I-V characteristic
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10 First generation cells consist o
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12 Basically, materials for manufac
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14 Defects are generally categorize
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16 copper, or nickel in concentrati
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18 the SiNx:H layer during the ther
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CHAPTER 2 SILICON NITRIDE LAYER FOR
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22 reflectance of polished Si can b
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24 information is application-orien
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26 film fed growth (EFG) ribbon sil
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28 Figure 2.5 Deposition of SiΝ :
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30 Figure 2.6 shows the dependence
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32 atoms, the interface states are
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34 2.5 Bulk Passivation of Si by Si
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36 It was found that the bulk lifet
Page 57 and 58:
CHAPTER 3 MODELING OF SURFACE RECOM
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40 Figure 3.2 Schematic diagram of
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42 σ and σp are the capture cross
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44 Qsi — charge density induced i
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47 Figure 3.5 The calculated depend
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49 * 10 Λ m; m is in a range from
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51 Na, sigma_n, sigma_p: enter x.xx
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53 Figure 3.7 Measured Seff(Δn) de
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55 curves converge to a single valu
Page 76 and 77: 57 seen that, initially Ss decrease
Page 78 and 79: 59 carrier recombination within the
Page 80 and 81: 61 recombination in the SCR influen
Page 82 and 83: 63 Figure 3.13 shows that: 1) after
Page 84 and 85: CHAPTER 4 MINORITY-CARRIER LIFETIME
Page 86 and 87: 67 Figure 4.1 Α photograph of QSSP
Page 88 and 89: 69 work. The most convenient is 1 m
Page 90 and 91: 7Ι dependence of the minority carr
Page 92 and 93: 73 It was tempting to assume that l
Page 94 and 95: 75 resistivities and lifetime) do n
Page 96 and 97: 77 5.2 Objective An electronic mode
Page 98 and 99: 79 Figure 5.2 is a photograph of a
Page 100 and 101: 81 impurity-gettering methods which
Page 102 and 103: 83 distribution of local currents a
Page 104 and 105: 85 modeling. Wafers were selected f
Page 106 and 107: 87 Figure 5.5 A comparison of (a) d
Page 108 and 109: 89 alloying results in metallizatio
Page 110 and 111: 91 (i) Defect clusters are the prim
Page 112 and 113: 93 SiNX induced charge density on t
Page 114 and 115: APPENDIX I PROGRAMS TO CALCULATE SR
Page 116 and 117: 97 phin = -ΕΙ - 1 / beta * log(nd
Page 118 and 119: 99 ίter3 = 0 for xi=1 to nmax/2-1
Page 120 and 121: 101 input "output file name {XXXXXX
Page 122 and 123: 103 F (i) = (exp (beta * (phip - ph
Page 124 and 125: APPENDIX III COMPUTATIONAL METHOD F
Page 128 and 129: REFERENCES 1. E. Becquerel , C. R.
Page 130 and 131: 44. L.L. Alt, S.W. Ing. Jr. and K.W
Page 132 and 133: 90. B.L. Sopori, Y. Zhang, and N.M.
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