Surface and bulk passivation of multicrystalline silicon solar cells by ...

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where, Bp denote the quasi-Fermi levels for electrons and holes respectively, n i is the
intrinsic carrier density of the silicon.
In the space charge region, the carrier densities are:
n(z) = nbeβΦ
p(z) = pbe
(3)
where, z denotes the position in the space charge region, Ψdenotes the corresponding
position-dependent potential in the space charge region.
where Ψ is the surface potential, and with the steady-state extrinsic Debye length
and the function,
The recombination rate in the space charge region is :
With the capture time constant for electrons τn0 = (σnνthΝ1 ) -1 and for holes,
l/
τp0 =(σpvthΝt)1
Hence, the recombination velocity in the space-charge region is given by: