Surface and bulk passivation of multicrystalline silicon solar cells by ...

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APPENDIX III COMPUTATIONAL METHOD FOR RECOMBINATION VELOCITY IN SCR Units: CGS is applied throughout the calculations k=1.381 x 1023 Boltzmann constant T=300 Absolute temperature ni=1.5 x 10 10 Intrinsic carrier concentration q=1 .602x 10 19 Magnitude of electronic charge Ε; 0 Intrinsic Fermi level ε0 8.85)10 -i4 permittivity of vacuum εs7.5 Dielectric constant of silicon nitride εsi=11.7 Dielectric constant of silicon β q/kT =38.668 Assumptions: p-type silicon, NΑ=1 0 16 cm 3 and Q±10 12 cm 2 Injection level in the bulk Δnb=1012 cm 3 The mobile carrier densities in the neutral bulk of the silicon is given by: n b = n 0 + Δn b Ρb = Ρ0 + Δnb (1) The equilibrium carrier densities no and Ρo can be easily calculated from the doping concentration; or = n,e βΦn Pb = nieβΦn (2) 105
106 where, Bp denote the quasi-Fermi levels for electrons and holes respectively, n i is the intrinsic carrier density of the silicon. In the space charge region, the carrier densities are: n(z) = nbeβΦ p(z) = pbe (3) where, z denotes the position in the space charge region, Ψdenotes the corresponding position-dependent potential in the space charge region. where Ψ is the surface potential, and with the steady-state extrinsic Debye length and the function, The recombination rate in the space charge region is : With the capture time constant for electrons τn0 = (σnνthΝ1 ) -1 and for holes, l/ τp0 =(σpvthΝt)1 Hence, the recombination velocity in the space-charge region is given by:
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Copyright Warning & Restrictions Th
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ABSTRACT SURFACE AND BULK PASSIVATI
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SURFACE AND BULK PASSIVATION OF MUL
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APPROVAL PAGE SURFACE AND BULK PASS
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Chuan Li, B.L. Sopori, P. Rupnowski
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ACKNOWLEDGEMENT The work presented
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TABLE OF CONTENTS (Continued) Chapt
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LIST OF TABLES Table Page 2.1 Posit
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LIST OF FIGURES (Continued) Figure
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LIST OF FIGURES (Continued) Figure
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2 percent; however, soon, more adva
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4 Figure 1.1 World solar module pro
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6 bond is called a hole. It too can
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8 Figure 1.4 The I-V characteristic
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10 First generation cells consist o
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12 Basically, materials for manufac
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14 Defects are generally categorize
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16 copper, or nickel in concentrati
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18 the SiNx:H layer during the ther
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CHAPTER 2 SILICON NITRIDE LAYER FOR
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22 reflectance of polished Si can b
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24 information is application-orien
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26 film fed growth (EFG) ribbon sil
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28 Figure 2.5 Deposition of SiΝ :
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30 Figure 2.6 shows the dependence
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32 atoms, the interface states are
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34 2.5 Bulk Passivation of Si by Si
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36 It was found that the bulk lifet
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CHAPTER 3 MODELING OF SURFACE RECOM
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40 Figure 3.2 Schematic diagram of
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42 σ and σp are the capture cross
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44 Qsi — charge density induced i
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47 Figure 3.5 The calculated depend
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49 * 10 Λ m; m is in a range from
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51 Na, sigma_n, sigma_p: enter x.xx
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53 Figure 3.7 Measured Seff(Δn) de
Page 74 and 75: 55 curves converge to a single valu
Page 76 and 77: 57 seen that, initially Ss decrease
Page 78 and 79: 59 carrier recombination within the
Page 80 and 81: 61 recombination in the SCR influen
Page 82 and 83: 63 Figure 3.13 shows that: 1) after
Page 84 and 85: CHAPTER 4 MINORITY-CARRIER LIFETIME
Page 86 and 87: 67 Figure 4.1 Α photograph of QSSP
Page 88 and 89: 69 work. The most convenient is 1 m
Page 90 and 91: 7Ι dependence of the minority carr
Page 92 and 93: 73 It was tempting to assume that l
Page 94 and 95: 75 resistivities and lifetime) do n
Page 96 and 97: 77 5.2 Objective An electronic mode
Page 98 and 99: 79 Figure 5.2 is a photograph of a
Page 100 and 101: 81 impurity-gettering methods which
Page 102 and 103: 83 distribution of local currents a
Page 104 and 105: 85 modeling. Wafers were selected f
Page 106 and 107: 87 Figure 5.5 A comparison of (a) d
Page 108 and 109: 89 alloying results in metallizatio
Page 110 and 111: 91 (i) Defect clusters are the prim
Page 112 and 113: 93 SiNX induced charge density on t
Page 114 and 115: APPENDIX I PROGRAMS TO CALCULATE SR
Page 116 and 117: 97 phin = -ΕΙ - 1 / beta * log(nd
Page 118 and 119: 99 ίter3 = 0 for xi=1 to nmax/2-1
Page 120 and 121: 101 input "output file name {XXXXXX
Page 122 and 123: 103 F (i) = (exp (beta * (phip - ph
Page 126 and 127: 107 where, dscr is the width of the
Page 128 and 129: REFERENCES 1. E. Becquerel , C. R.
Page 130 and 131: 44. L.L. Alt, S.W. Ing. Jr. and K.W
Page 132 and 133: 90. B.L. Sopori, Y. Zhang, and N.M.
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