Surface and bulk passivation of multicrystalline silicon solar cells by ...

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APPENDIX I PROGRAMS TO CALCULATE SRV USING SRH FORMALISM N-TYPE defsng a-z declare function nt(E) declare function pt (E) declare function LX(smin, E) declare function LINT(smin) dim shared Qf, Dit, vth, Nac, Ndc, run, mup, po, no, stepsize, ft dim shared phis(10000), ns(10000), ps(10000), fa(10000, 10000), fd(10000, 10000) dim shared Α(10000), B(10000), E(l0000), F(10000), Qit(10000), Qsi(10000), Qo(10000) const q = 1.602e-19 const k = 1. 381e-23 const T = 300 const beta = q / k / T const eo = 8. 85e-14 const eox = 3.9 const esi = 11.7 const ni = 1. 5e10 const dEl = -. 55 const dΕ2 = . 55 const Εi = (dE1 + dΕ2) / 2 const D = (2 * k * Τ * ni * eo * esi) .5 const TOL = .001 input "output file name {XXXXXX} : "; fl$ open fl$ + ". tXt" for append as #1 open f1$ + ". prn" for output as #2 print print #1, "" input "delta n 10^X range {low, high} : "; ml, m2 Print Print #1, using "delta n 10X range : ## ##"; ml, m2 95
96 print #1, "" input "Qf, Dit, with {X. xxxxeyy} : "; Qf, Dit, with print #1, using "Qf Dit with : #.####^^^^ #.####^^^^ Qf, Dit, with print print #1, "" Qf = Qf * q input "Nd, sigman, sigmap {x. xxxxeyy} : "; Ndc, mun, mup: Nac = 0 print #1, using "Nac num nup : #.####-^^^ #.####-^^^ Ndc, mun, mup print print #1, "" no = Ndc po=ni * ni /no input "stepsize, fine-tune {X.χχχχ} : "; stepsize, ft print #1, using "stepsize fine-tune : #.####^^^^ #.##'; stepsize, ft print print #1, " print print #1, "" print "" print #1, "", time$, date$ print print nt #, "" print " n. nn * 10^mm phis Qoverall Us Se" print # Ι , " n. nn * 10^mm phis Qoverall Us Se" print print #1, for m = ml to m2 for n = 1 to (10 - ft) step ft deltan = n * 10 m nd = no + deltan pd = p0 + deltan
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Copyright Warning & Restrictions Th
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ABSTRACT SURFACE AND BULK PASSIVATI
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SURFACE AND BULK PASSIVATION OF MUL
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APPROVAL PAGE SURFACE AND BULK PASS
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Chuan Li, B.L. Sopori, P. Rupnowski
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ACKNOWLEDGEMENT The work presented
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TABLE OF CONTENTS (Continued) Chapt
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LIST OF TABLES Table Page 2.1 Posit
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LIST OF FIGURES (Continued) Figure
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LIST OF FIGURES (Continued) Figure
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2 percent; however, soon, more adva
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4 Figure 1.1 World solar module pro
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6 bond is called a hole. It too can
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8 Figure 1.4 The I-V characteristic
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10 First generation cells consist o
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12 Basically, materials for manufac
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14 Defects are generally categorize
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16 copper, or nickel in concentrati
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18 the SiNx:H layer during the ther
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CHAPTER 2 SILICON NITRIDE LAYER FOR
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22 reflectance of polished Si can b
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24 information is application-orien
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26 film fed growth (EFG) ribbon sil
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28 Figure 2.5 Deposition of SiΝ :
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30 Figure 2.6 shows the dependence
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32 atoms, the interface states are
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34 2.5 Bulk Passivation of Si by Si
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36 It was found that the bulk lifet
Page 57 and 58:
CHAPTER 3 MODELING OF SURFACE RECOM
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40 Figure 3.2 Schematic diagram of
Page 61 and 62:
42 σ and σp are the capture cross
Page 63 and 64: 44 Qsi — charge density induced i
Page 66 and 67: 47 Figure 3.5 The calculated depend
Page 68 and 69: 49 * 10 Λ m; m is in a range from
Page 70 and 71: 51 Na, sigma_n, sigma_p: enter x.xx
Page 72 and 73: 53 Figure 3.7 Measured Seff(Δn) de
Page 74 and 75: 55 curves converge to a single valu
Page 76 and 77: 57 seen that, initially Ss decrease
Page 78 and 79: 59 carrier recombination within the
Page 80 and 81: 61 recombination in the SCR influen
Page 82 and 83: 63 Figure 3.13 shows that: 1) after
Page 84 and 85: CHAPTER 4 MINORITY-CARRIER LIFETIME
Page 86 and 87: 67 Figure 4.1 Α photograph of QSSP
Page 88 and 89: 69 work. The most convenient is 1 m
Page 90 and 91: 7Ι dependence of the minority carr
Page 92 and 93: 73 It was tempting to assume that l
Page 94 and 95: 75 resistivities and lifetime) do n
Page 96 and 97: 77 5.2 Objective An electronic mode
Page 98 and 99: 79 Figure 5.2 is a photograph of a
Page 100 and 101: 81 impurity-gettering methods which
Page 102 and 103: 83 distribution of local currents a
Page 104 and 105: 85 modeling. Wafers were selected f
Page 106 and 107: 87 Figure 5.5 A comparison of (a) d
Page 108 and 109: 89 alloying results in metallizatio
Page 110 and 111: 91 (i) Defect clusters are the prim
Page 112 and 113: 93 SiNX induced charge density on t
Page 116 and 117: 97 phin = -ΕΙ - 1 / beta * log(nd
Page 118 and 119: 99 ίter3 = 0 for xi=1 to nmax/2-1
Page 120 and 121: 101 input "output file name {XXXXXX
Page 122 and 123: 103 F (i) = (exp (beta * (phip - ph
Page 124 and 125: APPENDIX III COMPUTATIONAL METHOD F
Page 126 and 127: 107 where, dscr is the width of the
Page 128 and 129: REFERENCES 1. E. Becquerel , C. R.
Page 130 and 131: 44. L.L. Alt, S.W. Ing. Jr. and K.W
Page 132 and 133: 90. B.L. Sopori, Y. Zhang, and N.M.
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