Phonon lifetimes in silicon from 50 GHz to 15 THz - University of ...

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Dilute SiGe alloys grown by gas-source

molecular beam epitaxy

Change in thermal resistance

Δ W =Λ −Λ

−1 −1

28

Ge concentration

Comparison of the 3ω method and time-domain thermoreflectance

$Diffraction$

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TDTR enables measurements of epitaxial layers of high thermal conductivity • Time-domain thermoreflectance (TDTR) data and model fit for isotopically pure 28 Si – Two free parameters: thermal conductivity: Λ=164 W/m-K; interface conductance G=185 W/m 2 -K

Dilute SiGe alloys grown by gas-source molecular beam epitaxy Change in thermal resistance Δ W =Λ −Λ −1 −1 28 Ge concentration

Page 1 and 2: Phonon lifetimes in silicon from 50
Page 3 and 4: Si phonon dispersion high-field car
Page 5 and 6: Time domain thermoreflectance and p
Page 7 and 8: Broadband acoustic pulses • Fouri
Page 9: f
Page 13 and 14: Pump-probe Raman spectrometer
Page 15 and 16: Time-resolved anti-Stokes intensiti
Page 17: Summary • Lifetime of 100 GHz lon

Phonon lifetimes in silicon from 50 GHz to 15 THz - University of ...

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