Solar Grade-Silicon, Ingot, Wafer Technology and ... - Displaybank
Solar Grade-Silicon, Ingot, Wafer Technology and ... - Displaybank Solar Grade-Silicon, Ingot, Wafer Technology and ... - Displaybank
Solar Grade-Silicon, Ingot, Wafer Technology and Market Trend (2008~2012) 8.2. Figure Figure 1.1.1 Long-Term Forecast of Power Generation Volume by Global Energy Source ....................................... Figure 1.1.2 Potential Energy Volume of the Earth .................................................................................................... Figure 1.1.3 Types of Solar Cell ................................................................................................................................. Figure 1.1.4. Rouch Comparison of Generation Unit Cost by Power Source ............................................................. Figure 1.1.5. Module Manufacturing Unit Cost upon Cell Efficiency ........................................................................ Figure 1.1.6. Composition Ratio of Solar Cell Manufacturing Unit Cost ................................................................... Figure 1.1.7 Wafer and Module Manufacturing Unit Cost upon p-Si Manufacturing 1 Unit Cost ............................. Figure 1.2.1. Silicon Solar Cell Value Chain .............................................................................................................. Figure 1.2.2. Technology Direction for Inexpensive Solar Cell Material ................................................................... Figure 1.3.1. Silicon Solar Cell Manufacturing Process ............................................................................................. Figure 1.3.2. Monocrystalline Ingot Manufacturing Process ...................................................................................... Figure 1.3.3. Polycrystalline Silicon Wafer Manufacturing Process ........................................................................... Figure 2.1. Market Share and Forecast of p-Si Manufacturing Technology ............................................................... Figure 2.2. Metal Impurity Concentration Limit of Solar Cell p-Si ........................................................................... Figure 2.3. Nonmetal Impurity Concentration Limit of Solar Cell p-Si ..................................................................... Figure 2.1.1. MG Silicon Manufacturing Process (Elkem)......................................................................................... Figure 2.1.2. SiO Equilibrium Vapor Pressure upon Temperature .............................................................................. Figure 2.1.3 Achro Used in Silicon Reduction (ECN)................................................................................................ Figure 2.1.4. Carbothermic Reduction (ECN) ............................................................................................................ Figure 2.2.1. Environmental Variatios Need to be Considered in Each Process ......................................................... Figure 2.9. Basic Structure of Bell-jar Reactor Used in Siemens Method .................................................................. Figure 2.10. Interior of Siemens Reactor .................................................................................................................. Figure 2.11. U-Bar Arragement Inside of Siemens Reactor ...................................................................................... Figure 2.12. Silicon U-Bar Manufactured by Siemens Method ................................................................................ SAMPLE Figure 2.13. Silicon Chunk Obrained by Pulverizing Silicon U-Bar ........................................................................ Figure 2.3.2.1 Deposition Principle of TCS-based and MS-based ........................................................................... Figure 2.4.1 Fluidized Bed Reactor .......................................................................................................................... Figure 2.4.2 VLD Method Concept .......................................................................................................................... Figure 2.4.3 Silicon Production Plant in Tokuyaman Using VLD Method .............................................................. Figure 2.4.4 Property of Ingot Refined Using VLD Method .................................................................................... Figure 2.19. Tube Reactor in Joint Solar Silicon (JSSi) Process .............................................................................. Figure 2.20. Silicon Underwent High-Density Process ............................................................................................ Figure 2.5.1 Impurities in MG-Si: Equilibrium Distribution Coefficient ................................................................. Figure 2.5.2 Metal Impurities Employment within Silicon ...................................................................................... Figure 2.5.3 Acid Leaching Process Outline ............................................................................................................. Figure 2.5.4. SOLSILC Project Structure Map ......................................................................................................... All Contents of this report remain the property of Displaybank Jan’09
Solar Grade-Silicon, Ingot, Wafer Technology and Market Trend (2008~2012) Figure 2.5.5. SOLSILC Process Outline ................................................................................................................... Figure 2.5.6. 100 kW Pilot Arc Furnace and Eduction Process ................................................................................ Figure 2.5.7.Crystalox furnace (SINTEF) for Directional Solidification ................................................................. Figure 2.28. Elkem Process Outline ......................................................................................................................... Figure 2.29. μ-PCD Lifetime Estimation of Wafer Manufactured with p-Si Mixed with 0, 33, 50, and 100 % of Elkem’s UMG-Si to Conventional p-Si ................................................................................................................ Figure 2.30. Efficiency of Solar Cell Manufactured by Mixing Conventioanl Silicon with UMG-Si ...................... Figure 2.5.9. Kawasaki Steel Silicon Refining Process ............................................................................................ Figure 2.5.10. Kawasaki Steel Silicon Refining Process Map .................................................................................. Figure 2.5.11. Phosphorus Deletion Ratio in Electron beam Refining Process ........................................................ Figure 2.5.12. 1st Impurities Distribution of Ingot with Completed Directional Solidification ............................... Figure 2.5.13. Boron Deletion in Plasma Process upon Hydrogen and Vapor Addition ........................................... Figure 2.5.14. Vapor Pressure Curve by Element upon Temperature ....................................................................... Figure 2.5.15. NREL Process Outline (modified HEM) ........................................................................................... Figure 2.5.16. Modified HEM Reactor of Bench Scale ............................................................................................ Figure 2.5.17. HEM amd 60kg Silicon Ingot Used in NREL Experiment ................................................................ Figure 3.1. Cell Technology Shares .......................................................................................................................... Figure 3.2.1. Czochralski Growth Equipment .......................................................................................................... Figure 3.2.2. Monocrystalline Ingot Manufacturing Process through Czochraliski Growth ................................. Figure 3.2.3. Ingot Diameter Change upon Czochralski Growth Speed ................................................................... Figure 3.2.3. Floating Zone Method Equipment ....................................................................................................... Figure 3.3.1. Polycrystalline Ingot Manufacturing Method ...................................................................................... Figure 3.9. Dislocation Defect Distribution and Efficiency Distribution ................................................................. Figure 3.10. p-Si Manufactured by Block Casting Method ...................................................................................... Figure 3.3.4. Electromagnetic Continuous Casting Method .................................................................................. Figure 3.3.5. Comparison between Conventional Solidification Process and Electromagnetic Casting Method ..... SAMPLE Figure 3.3.6. Plasma Refining Process Using Electromagnetic Casting Method ..................................................... Figure 3.14. Solar Cell Wafer Manufacturing Process .............................................................................................. Figure 3.15. Silicon Wafer Manufacturing Process and Cut Loss ............................................................................ Figure 3.16. Polycrystalline Silicon Blocking Process ............................................................................................. Figure 3.17. Silicon Ingot Sawing Process and Loss Ratio by Process .................................................................... Figure 3.18. Silicon Block Cut Process .................................................................................................................... Figure 3.19. Polycrystalline Silicon Block after 1 st Cut ............................................................................................ Figure 3.20. Solar Cell Silicon Wafer Thickness and Cut Loss Variations ............................................................... Figure 3.5.1. Meniscus Shape Category ( M1,M2: Type1, M3: Type2 ) ............................................................... Figure 3.5.2. Crystal Growth Direction Category ..................................................................................................... Figure 3.5.3. Post-Annealing Method for Temperature Stress Reduction (EFG Method) ........................................ Figure 3.24. Edge-defined Film-fed Growth (EFG) Method Outline ....................................................................... All Contents of this report remain the property of Displaybank Jan’09
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<strong>Solar</strong> <strong>Grade</strong>-<strong>Silicon</strong>, <strong>Ingot</strong>, <strong>Wafer</strong> <strong>Technology</strong> <strong>and</strong> Market Trend (2008~2012)<br />
Figure 2.5.5. SOLSILC Process Outline ...................................................................................................................<br />
Figure 2.5.6. 100 kW Pilot Arc Furnace <strong>and</strong> Eduction Process ................................................................................<br />
Figure 2.5.7.Crystalox furnace (SINTEF) for Directional Solidification .................................................................<br />
Figure 2.28. Elkem Process Outline .........................................................................................................................<br />
Figure 2.29. μ-PCD Lifetime Estimation of <strong>Wafer</strong> Manufactured with p-Si Mixed with 0, 33, 50, <strong>and</strong> 100 %<br />
of Elkem’s UMG-Si to Conventional p-Si ................................................................................................................<br />
Figure 2.30. Efficiency of <strong>Solar</strong> Cell Manufactured by Mixing Conventioanl <strong>Silicon</strong> with UMG-Si ......................<br />
Figure 2.5.9. Kawasaki Steel <strong>Silicon</strong> Refining Process ............................................................................................<br />
Figure 2.5.10. Kawasaki Steel <strong>Silicon</strong> Refining Process Map ..................................................................................<br />
Figure 2.5.11. Phosphorus Deletion Ratio in Electron beam Refining Process ........................................................<br />
Figure 2.5.12. 1st Impurities Distribution of <strong>Ingot</strong> with Completed Directional Solidification ...............................<br />
Figure 2.5.13. Boron Deletion in Plasma Process upon Hydrogen <strong>and</strong> Vapor Addition ...........................................<br />
Figure 2.5.14. Vapor Pressure Curve by Element upon Temperature .......................................................................<br />
Figure 2.5.15. NREL Process Outline (modified HEM) ...........................................................................................<br />
Figure 2.5.16. Modified HEM Reactor of Bench Scale ............................................................................................<br />
Figure 2.5.17. HEM amd 60kg <strong>Silicon</strong> <strong>Ingot</strong> Used in NREL Experiment ................................................................<br />
Figure 3.1. Cell <strong>Technology</strong> Shares ..........................................................................................................................<br />
Figure 3.2.1. Czochralski Growth Equipment ..........................................................................................................<br />
Figure 3.2.2. Monocrystalline <strong>Ingot</strong> Manufacturing Process through Czochraliski Growth .................................<br />
Figure 3.2.3. <strong>Ingot</strong> Diameter Change upon Czochralski Growth Speed ...................................................................<br />
Figure 3.2.3. Floating Zone Method Equipment .......................................................................................................<br />
Figure 3.3.1. Polycrystalline <strong>Ingot</strong> Manufacturing Method ......................................................................................<br />
Figure 3.9. Dislocation Defect Distribution <strong>and</strong> Efficiency Distribution .................................................................<br />
Figure 3.10. p-Si Manufactured by Block Casting Method ......................................................................................<br />
Figure 3.3.4. Electromagnetic Continuous Casting Method ..................................................................................<br />
Figure 3.3.5. Comparison between Conventional Solidification Process <strong>and</strong> Electromagnetic Casting Method .....<br />
SAMPLE<br />
Figure 3.3.6. Plasma Refining Process Using Electromagnetic Casting Method .....................................................<br />
Figure 3.14. <strong>Solar</strong> Cell <strong>Wafer</strong> Manufacturing Process ..............................................................................................<br />
Figure 3.15. <strong>Silicon</strong> <strong>Wafer</strong> Manufacturing Process <strong>and</strong> Cut Loss ............................................................................<br />
Figure 3.16. Polycrystalline <strong>Silicon</strong> Blocking Process .............................................................................................<br />
Figure 3.17. <strong>Silicon</strong> <strong>Ingot</strong> Sawing Process <strong>and</strong> Loss Ratio by Process ....................................................................<br />
Figure 3.18. <strong>Silicon</strong> Block Cut Process ....................................................................................................................<br />
Figure 3.19. Polycrystalline <strong>Silicon</strong> Block after 1 st Cut ............................................................................................<br />
Figure 3.20. <strong>Solar</strong> Cell <strong>Silicon</strong> <strong>Wafer</strong> Thickness <strong>and</strong> Cut Loss Variations ...............................................................<br />
Figure 3.5.1. Meniscus Shape Category ( M1,M2: Type1, M3: Type2 ) ...............................................................<br />
Figure 3.5.2. Crystal Growth Direction Category .....................................................................................................<br />
Figure 3.5.3. Post-Annealing Method for Temperature Stress Reduction (EFG Method) ........................................<br />
Figure 3.24. Edge-defined Film-fed Growth (EFG) Method Outline .......................................................................<br />
All Contents of this report remain the property of <strong>Displaybank</strong><br />
Jan’09
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