NEC RF & Wireless - California Eastern Laboratories
NEC RF & Wireless - California Eastern Laboratories
NEC RF & Wireless - California Eastern Laboratories
You also want an ePaper? Increase the reach of your titles
YUMPU automatically turns print PDFs into web optimized ePapers that Google loves.
<strong>NEC</strong> GaAs Amplifier ICs<br />
Low Noise Amplifiers<br />
TYPICAL ELECTRICAL CHARACTERISTICS (TA = 25°C)<br />
Part<br />
Number<br />
Frequency Power Noise<br />
Test<br />
Range<br />
Gain Figure ICC P1dB<br />
Conditions<br />
(MHz)<br />
(dBm) (dB) (mA) (dBm)<br />
Package<br />
Application<br />
UPG2310TK 2300 to 2500 VCC = 3.0 V 27 1.8 30 — TK SDARS, ISM<br />
UPG2311T5F 1575 VCC = 3.0 V 37 1.2 17 +5 T5F GPS<br />
Power Amplifiers for Handset and <strong>Wireless</strong> Applications<br />
ELECTRICAL CHARACTERISTICS (TA = 25°C)<br />
Frequency<br />
Output Power<br />
Part<br />
Range<br />
Test<br />
Power Added Package Package Application<br />
Number (MHz) Conditions (dBm) Efficiency Code Style<br />
(%)<br />
f = 1800 MHz<br />
UPG2118K 800 to 2500 PIN = +5 dBm +31.5 MIN 42 MIN K 20 Pin, 4.15 x 4.15 x 0.9mm Handsets, ISM, AMR<br />
VD = +3 V<br />
f = 2450 MHz<br />
UPG2301TQ 2400 to 2500 PIN = +4 dBm +23 TYP 50 TYP TQ 10 Pin, 2.4 x 2.55 x 0.6mm Bluetooth, ZigBee, ISM<br />
VCC = +3.3 V<br />
f = 2450 MHz<br />
UPG2314T5N 2400 to 2500 PIN = 0 dBm +20 TYP 50 TYP T5N 6 Pin, 1.5 x 1.5 x 0.4mm Bluetooth, ZigBee, ISM<br />
VCC = +3 V<br />
UPG2250T5N<br />
f = 2450 MHz<br />
2400 to 2500 PIN = 0 dBm +19 TYP 55 TYP T5N 6 Pin, 1.5 x 1.5 x 0.4mm Bluetooth, ZigBee, ISM<br />
VCC = 1.8 V<br />
f = 2450 MHz<br />
2400 to 2500 PIN = 0 dBm +25 TYP 58 TYP T5N 6 Pin, 1.5 x 1.5 x 0.4mm Bluetooth, ZigBee, ISM<br />
VCC = 3.0 V<br />
<strong>NEC</strong> Discrete Power Devices – GaAs & Silicon<br />
GaAs Driver Devices Typical Specifications @ TC = 25°C<br />
Notes: 1. Measured at P1dB or POUT.<br />
Power & Gain<br />
Frequency Linear Power Added Test<br />
Part Range P1dB POUT PIN Gain Efficiency 1 Frequency VDS IDS 1 Package<br />
Number (GHz) (dBm) (dBm) (dBm) (dB) (%) (GHz) (V) (mA) Code<br />
NE651R479A 0.8 to 3.7 — 29.5 15.0 12.0 58 1.9 3.5 350 79A<br />
NE6510179A 0.8 to 3.7 — 35.0 25.0 10.0 56 1.9 3.5 1200 79A<br />
NE650103M 0.8 to 2.7 40.0 40.0 30.0 11.0 42 2.3 10 2100 3M<br />
Silicon LD-MOSFETs Typical Specifications @ TC = 25°C<br />
POUT Linear Gain<br />
Test Conditions<br />
Part (dBm) (dB) Freq PIN VDS IDSQ Package<br />
Number TYP TYP (GHz) (dBm) (V) (mA) Code<br />
NE552R479A 26.0 11 2.45 19 3.0 200 79A<br />
NE5511279A 40.0 15.0 0.9 27 7.5 400 79A<br />
NE5520279A 32.0 10 1.8 25 3.2 700 79A<br />
NE5520379A<br />
35.5 16 0.9<br />
VGS = 2.5V<br />
25 3.2<br />
33.0 8.5 1.8 VGS = 2.5V<br />
79A<br />
NE55410GR 40.4 25 2.1 16 28 120 GR
Change language