Studiehandboken 06/07 del 4 - KTH

KTH Studiehandbok Studiehandbok 2006-2007
2B1230 Krafthalvledarkomponenter
Poäng/KTH Credits 5
ECTS-poäng/ECTS Credits 7.5
Kursnivå/Level
D
Betygsskala/Grading, KTH 3, 4, 5
ECTS-betygsskala/Grading, ECTS
A-F
Valfri för/Elective for
MEEL(ME4)
Språk/Language
Svenska/Swedish
Kurssida/Course Page
Poäng/KTH Credits 5
ECTS-poäng/ECTS Credits 7.5
Kursnivå/Level
D
Betygsskala/Grading, KTH 3, 4, 5
ECTS-betygsskala/Grading, ECTS
A-F
Valfri för/Elective for
ELNI(E4), ELTE(E4), MIEL(F4),
TI12(TTITM1)
Språk/Language
Svenska/Swedish
Kurssida/Course Page
http://www.it.kth.se/courses/2B1230
Power Semiconductor Devices
Kursansvarig/Coordinator
Kursuppläggning/Time Period 2
Kursansvarig/Coordinator
Anders Hallén, ahallen@imit.kth.se
Tel. 08-790 43 58
Kursuppläggning/Time Period 3
Föreläsningar 40 h
Kortbeskrivning
Se engelsk text
Mål
After finishing the course, the students should be able to
• identify materials and processing issues;
• select adequate measurement techniques with appropriate sensitivity
and resolution;
• operate the chosen instruments for analysis;
• correlate and cross-examine measurement results obtained using
different techniques;
• analyze and interpret the measurement results;
• recommend and comment on further analyses if applicable.
Abstract
The course gives a deeper insight in the
physics, design and application of
modern power semiconductor devices.
In addition to the traditional text book
and lectures, a project is also offered
where the student is able to reach an indepth
knowledge of a particular device
or material aspect.
Aim
The objective is to understand the
operation of power semiconductor
devices, and advantages and
disadvantages with various materials
and device concepts, so that a suitable
device can be selected for a particular
application.
Syllabus
The course deals with the operation of
power semiconductor devices from basic
physical models and transport
properties, but the focus is on the
understanding of different device
concepts. The operation of bipolar
power devices, as pin-diodes and
various types of thyristors are described,
but also the principles for unipolar
rectifiers and switches such as power
MOSFET is included. Modern devices
often make use of a combination of
unipolar control and bipolar power
handling and the course also describes
these devices, for instance the IGBT and
MCT structures. Also devices made of
semiconductors other than silicon, i.e.,
silicon carbide, will be addressed.
Prerequisites
2B1202 Semiconductor devices, basic
course, 2B1260 Semiconductor theory
and device physics or similar courses
Follow up
Diploma work.
Requirements
No written examination will be given,
but instead the students are required to
fulfill a smaller project and present their
results. (ANN1; 5 credits) and hand in
solutions to selected problems from the
book.
ICT Skolan för informations- och kommunikationsteknik 595