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Intel PXA250 and PXA210 Applications Processors

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System Memory Interface<br />

data has been latched, the address may change on the next rising edge of MEMCLK or any cycles<br />

thereafter. The nOE or nPWE signal de-asserts one MEMCLK after data is latched. Before a<br />

subsequent data beat, nOE or nPWE remains deasserted for RDN+1 memory cycles. The chip<br />

select <strong>and</strong> byte selects, DQM[3:0], remain asserted for one memory cycle after the burst’s final<br />

nOE or nPWE deassertion. Refer to Figure 2-3 for 32-Bit Variable Latency I/O read timing <strong>and</strong><br />

Figure 2-8 for Variable Latency I/O Interface AC Specifications<br />

Figure 2-3. 32-Bit Variable Latency I/O Read Timing (Burst-of-Four, One Wait Cycle Per Beat)<br />

0ns 100ns 200ns 300ns<br />

memlk<br />

nCS[0]<br />

MA[25:2]<br />

MA[1:0]<br />

tAS<br />

0 1 2 3<br />

"00"<br />

nOE<br />

tASRW0<br />

tCES<br />

tAH<br />

RDN+1<br />

tASWN<br />

RDF+1+Waits<br />

tCEH<br />

RRR+1<br />

nPWE<br />

RDnWR<br />

RDY<br />

MD[31:0]<br />

DQM[3:0]<br />

"0000"<br />

nCS[1]<br />

A8867-01<br />

Table 2-8. Variable Latency I/O Interface AC Specifications (Sheet 1 of 2)<br />

Symbol<br />

Description<br />

MEMCKLK<br />

99.5 118.0 132.7 147.5 165.9<br />

Units<br />

Notes<br />

Variable Latency IO Interface (VLIO) (Asynchronous)<br />

tvlioAS MA(25:0) setup to nCS asserted 10 8.5 7.5 6.8 6 ns, 1<br />

tvlioASRW<br />

MA(25:0) setup to nOE or nPWE<br />

asserted<br />

10 8.5 7.5 6.8 6 ns, 1<br />

tvlioAH<br />

MA(25:0) hold after nOE or nPWE deasserted<br />

10 8.5 7.5 6.8 6 ns, 1<br />

tvlioCES nCS setup to nOE or nPWE asserted 20 17 15 13.6 12 ns, 2<br />

tvlioCEH<br />

nCS hold after nOE or nPWE deasserted<br />

10 8.5 7.5 6.8 6 ns, 1<br />

2-10 <strong>PXA250</strong> <strong>and</strong> <strong>PXA210</strong> <strong>Applications</strong> <strong>Processors</strong> Design Guide

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