datasheet: pdf

VISHAY
BC856 to BC859
Vishay Semiconductors
Small Signal Transistors (PNP)
Features
• PNP Silicon Epitaxial Planar Transistors for
switching and AF amplifier applications.
• Especially suited for automatic insertion in thick
and thin-film circuits.
• These transistors are subdivided into three groups
A, B, and C) according to their current gain. The
type BC856 is available in groups A and B, however,
the types
BC857, BC558 and BC859 can be supplied in all
three groups. The BC849 is a low noise type.
18978
3
2
1
1
B
C
E
3
2
• As complementary types, the NPN transistors
BC846...BC849 are recomended.
Mechanical Data
Case: SOT-23 Plastic case
Weight: approx. 8.8 mg
Marking:
BC856A = 3A BC858A = 3J
BC856B = 3B BC858B = 3K
BC858C = 3L
Packaging Codes/Options:
GS18 / 10 k per 13" reel (8 mm tape), 10 k/box
GS08 / 3 k per 7" reel (8 mm tape), 15 k/box
Pinning:
1 = Base, 2 = Emitter, 3 = Collector
BC857A = 3E
BC857B = 3F
BC857C = 3G
BC859A = 4A
BC859B = 4B
BC859C = 4C
Document Number 85135
Rev. 1.2, 08-Sep-04
www.vishay.com
1

BC856 to BC859
Vishay Semiconductors
VISHAY
Absolute Maximum Ratings
T amb = 25 °C, unless otherwise specified
Parameter Test condition Part Symbol Value Unit
Collector - base voltage BC856 - V CBO 80 V
BC857 - V CBO 50 V
BC858 - V CBO 30 V
BC859 - V CBO 30 V
Collector - emitter voltage
BC856 - V CES 80 V
(base shorted)
BC857 - V CES 50 V
BC858 - V CES 30 V
BC859 - V CES 30 V
Collector - emitter voltage
BC856 - V CEO 65 V
(base open)
BC857 - V CEO 45 V
BC858 - V CEO 30 V
BC859 - V CEO 30 V
Emitter - base voltage - V EBO 5 V
Collector current - I C 100 mA
Peak colector current - I CM 200 mA
Peak base current - I BM 200 mA
Peak emitter current I EM 200 mA
Power dissipation T amb = 25 °C P tot 310
1) mW
1) Device on fiberglass substrate, see layout on third page.
Maximum Thermal Resistance
Parameter Test condition Symbol Value Unit
Thermal resistance junction to
R θJA 320 1) °C/W
ambient air
Thermal resistance junction to
R θSB 450
1) °C/W
substrate backside
Junction temperature T j 150 °C
Storage temperature range T S - 65 to + 150 °C
1) Device on fiberglass substrate, see layout on third page.
Electrical DC Characteristics
Parameter Test condition Part Symbol Min Typ Max Unit
Small signal current gain - V CE = 5 V, - I C = 2 mA, f = 1 kHz h fe 220
(current gain group A)
Small signal current gain - V CE = 5 V, - I C = 2 mA, f = 1 kHz h fe 330
(current gain group B)
Small signal current gain - V CE = 5 V, - I C = 2 mA, f = 1 kHz h fe 600
(current gain group C)
Input impedance (current gain - V CE = 5 V, - I C = 2 mA, f = 1 kHz h ie 1.6 2.7 4.5 kΩ
group A)
Input impedance (current gain - V CE = 5 V, - I C = 2 mA, f = 1 kHz h ie 3.2 4.5 8.5 kΩ
group B)
Input impedance (current gain - V CE = 5 V, - I C = 2 mA, f = 1 kHz h ie 6 8.7 15 kΩ
group C)
Output admittance (current gain
group A)
- V CE = 5 V, - I C = 2 mA, f = 1 kHz h oe 18 30 µS
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Document Number 85135
Rev. 1.2, 08-Sep-04

VISHAY
BC856 to BC859
Vishay Semiconductors
Parameter Test condition Part Symbol Min Typ Max Unit
Output admittance (current gain
group B)
Output admittance (current gain
group C)
Reverse voltage transfer ratio
(current gain group A)
Reverse voltage transfer ratio
(current gain group B)
Reverse voltage transfer ratio
(current gain group C)
- V CE = 5 V, - I C = 2 mA, f = 1 kHz h oe 30 60 µS
- V CE = 5 V, - I C = 2 mA, f = 1 kHz h oe 60 110 µS
- V CE = 5 V, - I C = 2 mA, f = 1 kHz h re 1.5 x 10
-4
- V CE = 5 V, - I C = 2 mA, f = 1 kHz h re 2 x 10
-4
- V CE = 5 V, - I C = 2 mA, f = 1 kHz h re 3 x 10 -4
DC current gain (current gain - V CE = 5 V, - I C = 10 µA h FE 90
group A)
DC current gain (current gain - V CE = 5 V, - I C = 10 µA h FE 150
group B)
DC current gain (current gain - V CE = 5 V, - I C = 10 µA h FE 270
group C)
DC current gain (current gain - V CE = 5 V, - I C = 2 mA h FE 110 180 220
group A)
DC current gain (current gain - V CE = 5 V, - I C = 2 mA h FE 200 290 450
group B)
DC current gain (current gain - V CE = 5 V, - I C = 2 mA h FE 420 520 800
group C)
Collector saturation voltage - I C = 10 mA, - I B = 0.5 mA V CEsat 90 300 mV
- I C = 100 mA, - I B = 5 mA V CEsat 250 650 mV
Base saturation voltage - I C = 10 mA, - I B = 0.5 mA V BEsat 700 mV
- I C = 100 mA, - I B = 5 mA V BEsat 900 mV
Base - emiter voltage - V CE = 5 V, - I C = 2 mA V BE 600 660 750 mV
- V CE = 5 V, - I C = 10 mA V BE 820 mV
Collector-emitter cut-off current - V CE = 80 V BC856 I CES 0.2 15 nA
- V CE = 50 V BC857 I CES 0.2 15 nA
- V CE = 30 V BC858 I CES 0.2 15 nA
BC859 I CES 0.2 15 nA
- V CE = 80 V, T j = 125 °C BC857 I CES 4 µA
- V CE = 50 V, T j = 125 °C BC857 I CES 4 µA
- V CE = 30 V, T j = 125 °C BC858 I CES 4 µA
BC859 I CES 4 µA
Collector-base cut-off current - V CB = 30 V I CBO 15 µA
- V CB = 30 V, T j = 150 °C I CBO 5 µA
Document Number 85135
Rev. 1.2, 08-Sep-04
www.vishay.com
3

BC856 to BC859
Vishay Semiconductors
VISHAY
Electrical AC Characteristics
Parameter Test condition Part Symbol Min Typ Max Unit
Gain bandwidth product - V CE = 5 V, - I C = 10 mA,
f T 150 MHz
f = 100 MHz
Collector - base capacitance - V CB = 10 V, f = 1 MHz C CBO 6 pF
Noise figure
- V CE = 5 V, - I C = 200 µA,
R G = 2 kΩ, f = 1 kHz,
∆f = 200 Hz
BC856 F 2 10 dB
- V CE = 5 V, - I C = 200 µA,
R G = 2 kΩ,
f = (30 to 15000) Hz
BC857 F 2 10 dB
BC858 F 2 10 dB
BC859 F 1 4 dB
BC859 F 1.2 4 dB
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Document Number 85135
Rev. 1.2, 08-Sep-04

VISHAY
BC856 to BC859
Vishay Semiconductors
Layout for R thJA test
Thickness: Fiberglass 1.5 mm (0.059 in.)
Copper leads 0.3 mm (0.012 in.)
7.5 (0.3)
3 (0.12)
12 (0.47)
1 (0.4)
2 (0.8)
2 (0.8)
1 (0.4)
15 (0.59)
0.8 (0.03)
5 (0.2)
1.5 (0.06)
5.1 (0.2)
17451
Typical Characteristics (T amb = 25 °C unless otherwise specified)
mW
500
10
0.5
P tot
400
300
200
100
10
r thSB
R thSB
-1
-2
10
0.2
0.1
0.05
0.02
0.01
ν =0
0.005
tp
tp
ν =
T
T
P I
0
0 100 200 °C
T SB
19195
Figure 2. Pulse Thermal Resistance vs. Pulse Duration
19191
10
-3
10 -7
10-6
-5 -4 -3 -2 -1
10
10
10
10
tp
10
1s
Figure 1. Admissible Power Dissipation vs. Temperature of
Substrate Backside
(normalized)
Document Number 85135
Rev. 1.2, 08-Sep-04
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5

BC856 to BC859
Vishay Semiconductors
VISHAY
10 3 2
10
-V
CE
= 5 V
19183
100 °C
h FE
10
1
-2
10 10-1
T = 25 °C
amb
-50°C
1
2
10 10
-I C
Figure 3. DC Current Gain vs. Collector Current
V
0.5
0.4
-I C /-I B = 20
0.3
-V CEsat
0.2
T amb = 100 °C
25 °C
0.1
-50 °C
0
10 -1 1
2
10 10 mA
19187
-I C
Figure 6. Collector Saturation Voltage vs. Collector Current
nA
10 4
10 3
-I CBO
2
10
10
test voltage - V CBO :
equal to the given
1
maximum value - VCEO
typical
maximum
-1
10
0 100 200 °C
19184
T j
C CBO
C EBO
pF
20
10
T = 25 °C
amb
C CBO
C EBO
0 0.1 1 10 V
-V CBO, -V EBO
Figure 4. Collector-Base Cutoff Curent vs. Ambient Temperature
Figure 7. Collector Base Capacitance, Emitter base Capacitance
vs. Bias Voltage
mA
10 2
-V
CE
= 5 V
T amb = 25 °C
10 2
-V CE =5V
T amb= 25°C
10
19186
10
-I C
19197
-V BE
1
10 -1 0 0.5 1V
h e (-I C )
h e (-I C = 2 mA)
1
10
-1
10 -1
19188
h ie
h fe
hoe
h re
1
-I C
10 mA
Figure 5. Collector Current vs. Base-Emitter Voltage
Figure 8. Relative h-Parameters vs. Collector Current
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Document Number 85135
Rev. 1.2, 08-Sep-04

VISHAY
BC856 to BC859
Vishay Semiconductors
MHz
10 3
T = 25 °C
amb
fr
-V CE =10V
19198
-I C
10 2
5V
2V
10
0.1 1 10 100 mA
Figure 9. Gain-Bandwidth Product vs. Collector Current
F
19201
dB
20 -I C = 0.2 mA
18 f=1kHz
16 R G =2kΩ
T amb = 25 °C
14
12
10
8
6
4
2
0
0.1 1 10 100 mA
-V CE
Figure 12. Noise Figure vs. Collector Emitter Voltage
F
19199
dB
20
18
16
14
12
10
8
6
4
2
-V =5V CE
f = 120 Hz
R G =1MΩ 100 kΩ 10 kΩ 1kΩ
500 Ω
T amb = 25 °C
0 10
-3 -2 10 10
-1 1 10 mA
-I C
Figure 10. Noise Figure vs. Collector Current
dB
20
18
16
14
-V CE =5V
f = 120 Hz
T amb = 25 °C
F
12
10
8
R G =1MΩ
100 kΩ 10 kΩ
1kΩ
6
4
2
500 Ω
19200
0 10
-3 -2 10 10
-1 1 10 mA
-I C
Figure 11. Noise Figure vs. Collector Current
Document Number 85135
Rev. 1.2, 08-Sep-04
www.vishay.com
7

BC856 to BC859
Vishay Semiconductors
VISHAY
Package Dimensions in mm (Inches)
0.175 (.007)
0.098 (.005)
1.15 (.045)
0.95 (.037)
0.1 (.004) max.
2.6 (.102)
0.4 (.016)
0.4 (.016)
2.35 (.092)
ISO Method E
3.1 (.122)
2.8 (.110)
Mounting Pad Layout
0.4 (.016)
0.52 (0.020)
3
0.9 (0.035)
1.43 (.056)
1.20(.047)
2.0 (0.079)
1 2
0.95 (.037)
0.95 (.037)
0.95 (0.037)
0.95 (0.037)
17418
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Document Number 85135
8
Rev. 1.2, 08-Sep-04

VISHAY
BC856 to BC859
Vishay Semiconductors
Ozone Depleting Substances Policy Statement
It is the policy of Vishay Semiconductor GmbH to
1. Meet all present and future national and international statutory requirements.
2. Regularly and continuously improve the performance of our products, processes, distribution and
operatingsystems with respect to their impact on the health and safety of our employees and the public, as
well as their impact on the environment.
It is particular concern to control or eliminate releases of those substances into the atmosphere which are
known as ozone depleting substances (ODSs).
The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs
and forbid their use within the next ten years. Various national and international initiatives are pressing for an
earlier ban on these substances.
Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the
use of ODSs listed in the following documents.
1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments
respectively
2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental
Protection Agency (EPA) in the USA
3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively.
Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting
substances and do not contain such substances.
We reserve the right to make changes to improve technical design
and may do so without further notice.
Parameters can vary in different applications. All operating parameters must be validated for each
customer application by the customer. Should the buyer use Vishay Semiconductors products for any
unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all
claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal
damage, injury or death associated with such unintended or unauthorized use.
Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany
Telephone: 49 (0)7131 67 2831, Fax number: 49 (0)7131 67 2423
Document Number 85135
Rev. 1.2, 08-Sep-04
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9