Itinerant Spin Dynamics in Structures of ... - Jacobs University

Itinerant Spin Dynamics in Structures of ... - Jacobs University Itinerant Spin Dynamics in Structures of ... - Jacobs University

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22 Chapter 2: Spin Dynamics: Overview and Analysis of 2D Systems Perturbation theory yields then directly the corresponding spin relaxation rate 1 ∑ ∫ dθ = πνn i τ s 2π (1−cosθ) | V SO(k,k ′ ) αβ | 2 , (2.34) α,β proportional to the concentration of impurities n i . Here α,β = ± denotes the spin indices. Sincethespin-orbitinteraction increases withtheatomic numberZ oftheimpurityelement, this spin relaxation increases as Z 2 , being stronger for heavier element impurities. 2.4.5 Bir-Aronov-Pikus Spin Relaxation Theexchangeinteraction J betweenelectrons andholesinp-dopedsemiconductors results in spin relaxation, as well.[BAP76] Its strength is proportional to the density of holes p and depends on their itinerancy. If the holes are localized they act like magnetic impurities. If they are itinerant, the spin of the conduction electrons is transfered by the exchange interaction to the holes, where the spin-orbit splitting of the valence bands results in fast spin relaxation of the hole spin due to the Elliott-Yafet, or the D’yakonov-Perel’ mechanism. 2.4.6 Magnetic Impurities Magnetic impurities have a spin S which interacts with the spin of the conduction electrons by the exchange interaction J, resulting in a spatially and temporarily fluctuating local magnetic field B MI (r) = − ∑ i Jδ(r−R i )S, (2.35) where the sum is over the position of the magnetic impurities R i . This gives rise to spin relaxation of the conduction electrons, with a rate given by 1 τ Ms = 2πn M νJ 2 S(S +1), (2.36) where n M is the density of magnetic impurities, and ν is the DOS at the Fermi energy. Here, S is the spin quantum number of the magnetic impurity, which can take the values S = 1/2,1,3/2,2.... Antiferromagnetic exchange interaction between the magnetic impurity spin and the conduction electrons results in a competition between the conduction electrons to form a singlet with the impurity spin, which results in enhanced nonmagnetic and magnetic scattering. At low temperatures the magnetic impurity spin is screened by

Chapter 2: Spin Dynamics: Overview and Analysis of 2D Systems 23 the conduction electrons resulting in a vanishing of the magnetic scattering rate. Thus, the spin scattering from magnetic impurities has a maximum at a temperature of the order of the Kondo temperature T K ∼ E F exp(−1/νJ)[MACR06, MHEZ71, ZBvDA04]. In semiconductors T K is exponentially small due to the small effective mass m e (see Appendix A) and the resulting small DOS ν. Therefore, the magnetic moments remain free at the experimentally achievable temperatures. At large concentration of magnetic impurities, the RKKY-exchange interaction between the magnetic impurities quenches however the spin quantum dynamics, so that S(S +1) is replaced by its classical value S 2 . In Mn-p-doped GaAs, the exchange interaction between the Mn dopants and the holes can result in compensation of the hole spins and therefore a suppression of the Bir-Aronov-Pikus (BAP) spin relaxation[ADK + 08]. 2.4.7 Nuclear Spins Nuclear spins interact by the hyperfine interaction with conduction electrons. The hyperfine interaction between nuclear spins Î and the conduction electron spin, ŝ, results in a local Zeeman field given by [OW53] ˆB N (r) = − 8π 3 g 0 µ B ∑ γ n Îδ(r−R n ), (2.37) γ g whereγ n isthegyromagneticratioofthenuclearspin. Thespatialandtemporalfluctuations ofthishyperfineinteraction fieldresultinspinrelaxationproportionaltoitsvariance, similar to the spin relaxation by magnetic impurities. n 2.4.8 Magnetic Field Dependence of Spin Relaxation The magnetic field changes the electron momentum due to the Lorentz force, resulting in a continuous change of the spin-orbit field, which similar to the momentum scattering results in motional narrowing and thereby a reduction of DP spin relaxation: [Ivc73, PT84, BB04], 1 τ s ∼ τ 1+ωcτ 2 2. (2.38) Another source of a magnetic field dependence is the precession around the external magnetic field. In bulk semiconductors and for magnetic fields perpendicularto a quantum well, the orbital mechanism is dominating, however. This magnetic field dependence can be used to identify the spin relaxation mechanism, since the EYS does have only a weak magnetic

Chapter 2: <strong>Sp<strong>in</strong></strong> <strong>Dynamics</strong>: Overview and Analysis <strong>of</strong> 2D Systems 23<br />

the conduction electrons result<strong>in</strong>g <strong>in</strong> a vanish<strong>in</strong>g <strong>of</strong> the magnetic scatter<strong>in</strong>g rate. Thus,<br />

the sp<strong>in</strong> scatter<strong>in</strong>g from magnetic impurities has a maximum at a temperature <strong>of</strong> the order<br />

<strong>of</strong> the Kondo temperature T K ∼ E F exp(−1/νJ)[MACR06, MHEZ71, ZBvDA04]. In<br />

semiconductors T K is exponentially small due to the small effective mass m e (see Appendix<br />

A) and the result<strong>in</strong>g small DOS ν. Therefore, the magnetic moments rema<strong>in</strong> free at the<br />

experimentally achievable temperatures. At large concentration <strong>of</strong> magnetic impurities, the<br />

RKKY-exchange <strong>in</strong>teraction between the magnetic impurities quenches however the sp<strong>in</strong><br />

quantum dynamics, so that S(S +1) is replaced by its classical value S 2 . In Mn-p-doped<br />

GaAs, the exchange <strong>in</strong>teraction between the Mn dopants and the holes can result <strong>in</strong> compensation<br />

<strong>of</strong> the hole sp<strong>in</strong>s and therefore a suppression <strong>of</strong> the Bir-Aronov-Pikus (BAP) sp<strong>in</strong><br />

relaxation[ADK + 08].<br />

2.4.7 Nuclear <strong>Sp<strong>in</strong></strong>s<br />

Nuclear sp<strong>in</strong>s <strong>in</strong>teract by the hyperf<strong>in</strong>e <strong>in</strong>teraction with conduction electrons. The<br />

hyperf<strong>in</strong>e <strong>in</strong>teraction between nuclear sp<strong>in</strong>s Î and the conduction electron sp<strong>in</strong>, ŝ, results <strong>in</strong><br />

a local Zeeman field given by [OW53]<br />

ˆB N (r) = − 8π 3<br />

g 0 µ B<br />

∑<br />

γ n Îδ(r−R n ), (2.37)<br />

γ g<br />

whereγ n isthegyromagneticratio<strong>of</strong>thenuclearsp<strong>in</strong>. Thespatialandtemporalfluctuations<br />

<strong>of</strong>thishyperf<strong>in</strong>e<strong>in</strong>teraction fieldresult<strong>in</strong>sp<strong>in</strong>relaxationproportionaltoitsvariance, similar<br />

to the sp<strong>in</strong> relaxation by magnetic impurities.<br />

n<br />

2.4.8 Magnetic Field Dependence <strong>of</strong> <strong>Sp<strong>in</strong></strong> Relaxation<br />

The magnetic field changes the electron momentum due to the Lorentz force,<br />

result<strong>in</strong>g <strong>in</strong> a cont<strong>in</strong>uous change <strong>of</strong> the sp<strong>in</strong>-orbit field, which similar to the momentum<br />

scatter<strong>in</strong>g results <strong>in</strong> motional narrow<strong>in</strong>g and thereby a reduction <strong>of</strong> DP sp<strong>in</strong> relaxation:<br />

[Ivc73, PT84, BB04],<br />

1<br />

τ s<br />

∼<br />

τ<br />

1+ωcτ 2 2. (2.38)<br />

Another source <strong>of</strong> a magnetic field dependence is the precession around the external magnetic<br />

field. In bulk semiconductors and for magnetic fields perpendicularto a quantum well,<br />

the orbital mechanism is dom<strong>in</strong>at<strong>in</strong>g, however. This magnetic field dependence can be used<br />

to identify the sp<strong>in</strong> relaxation mechanism, s<strong>in</strong>ce the EYS does have only a weak magnetic

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