Itinerant Spin Dynamics in Structures of ... - Jacobs University
Itinerant Spin Dynamics in Structures of ... - Jacobs University Itinerant Spin Dynamics in Structures of ... - Jacobs University
10 Chapter 2: Spin Dynamics: Overview and Analysis of 2D Systems Injecting an electron at position r 0 into a conductor with previously constant electrondensity ρ 0 , thesolutionof thediffusionequation yieldsthat theelectron density spreads in space according to ρ(r,t) = ρ 0 +exp(−(r−r 0 ) 2 /4D e t)/(4πD e t) d D/2 . The dimension d D is equal to the kinetic dimension d, d D = d, if the elastic mean free path l e is smaller than the size of the sample in all directions. If the elastic mean free path is larger than the sample size in one direction the diffusion dimension reduces by one, accordingly. Thus, on average the variance of the distance the electron moves after time t is 〈(r−r 0 ) 2 〉 = 2d D D e t. This introduces a new length scale, the diffusion length L D (t) = √ D e t. We can rewrite the density as ρ = 〈ψ † (r,t)ψ(r,t)〉, where ψ † = (ψ † + ,ψ† − ) is the two-component vector of the up (+), and down (-) spin fermionic creation operators, and ψ the 2-component vector of annihilation operators, respectively, 〈...〉 denotes the expectation value. Accordingly, the spin density s(r,t) is expected to satisfy a diffusion equation, as well. The spin density is defined by where σ is the vector of Pauli matrices, ⎛ ⎞ ⎛ σ x = ⎝ 0 1 ⎠,σ y = ⎝ 0 −i 1 0 i 0 s(r,t) = 1 2 〈ψ† (r,t)σψ(r,t)〉, (2.9) ⎞ ⎠, and σ z = ⎛ ⎝ 1 0 0 −1 Thus the z-component of the spin density is half the difference between the density of spin up and down electrons, s z = (ρ + −ρ − )/2, which is the local spin polarization of the electron system. Thus, we can directly infer the diffusion equation for s z , and, similarly, for the other components of the spin density, yielding, without magnetic field and spin-orbit interaction,[Tor56] ∂s ∂t = D e∇ 2 s− sˆτ . (2.10) s Here, in the spin relaxation term we introduced the tensor ˆτ s , which can have non-diagonal matrix elements. In the case of a diagonal matrix, τ sxx = τ syy = τ 2 , is the spin dephasing time, and τ szz = τ 1 the spin relaxation time. The spin diffusion equation can be written as a continuity equation for the spin density vector, by defining the spin diffusion current of the spin components s i , ⎞ ⎠. J si = −D e ∇s i . (2.11) Thus, we get the continuity equation for the spin density components s i , ∂s i ∂t +∇J s i = − ∑ j s j (ˆτ s ) ij . (2.12)
Chapter 2: Spin Dynamics: Overview and Analysis of 2D Systems 11 2.3.3 Spin Orbit Interaction in Semiconductors SOI in semiconductors is closely related to breaking of symmetries which lift spin degeneracy: In the case without magnetic field B we start with a twofold degeneracy: Time inversion symmetry, E ↑ (k) = E ↓ (−k) and space inversion symmetry, E ↑ (k) = E ↑ (−k). As a consequence we have E ↑ (k) = E ↓ (k). In the following we show how the degeneracy is lifted in semiconductor devices in case of B = 0. While silicon and germanium have in their diamond structure an inversion symmetry around every midpoint on each line connecting nearest neighbor atoms, this is not the case for III-V-semiconductors like GaAs, InAs, InSb, or ZnS. These have a zinc-blende structure which can be obtained from a diamond structure with neighbored sites occupied by the two different elements. Therefore the inversion symmetry is broken, which results in spin-orbit coupling. This can be understood by noticing that pairs like Ga-As are local dipoles whose electric field is responsible for SOC if inversion symmetry is broken 2 . Similarly, that symmetry is broken in II-VI-semiconductors. This bulk inversion asymmetry (BIA) coupling, or often so called Dresselhaus-coupling, is anisotropic, as given by [Dre55] [ H D = γ D σx k x (ky 2 −k2 z )+σ yk y (kz 2 −k2 x )+σ zk z (kx 2 −k2 y )] , (2.13) where γ D is the Dresselhaus-spin-orbit coefficient. Band structure calculations yield the following values: γ D = 27.6 eVÅ(GaAs), = 27.2 eVÅ(InAs), = 760.1 eVÅ(InSb) [Win03]. Some values extracted in experiments are listed in Tab.A. Confinement in quantum wells with width a z on the order of the Fermi wave length λ F yields accordingly a spin-orbit interaction where the momentum in growth direction is of the order of 1/a z . Because of the anisotropy of the Dresselhaus term, the spin-orbit interaction depends strongly on the growth direction of the quantum well. Grown in [001] direction, one gets, taking the expectation value of Eq.(2.13) in the direction normal to the plane, noting that 〈k z 〉 = 〈kz〉 3 = 0, [Dre55] H D[001] = α 1 (−σ x k x +σ y k y )+γ D (σ x k x ky 2 −σ y k y kx). 2 (2.14) where α 1 = γ D 〈kz〉 2 is the linear Dresselhaus parameter. Thus, inserting an electron with momentum along the x-direction, with its spin initially polarized in z-direction, it will 2 Starting from an extended Kane model where p-like higher energy bands are included one gets a Hamiltonian with matrix elements which are only nonzero if the crystal has no center of inversion.[FMAE + 07]
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Chapter 2: <strong>Sp<strong>in</strong></strong> <strong>Dynamics</strong>: Overview and Analysis <strong>of</strong> 2D Systems 11<br />
2.3.3 <strong>Sp<strong>in</strong></strong> Orbit Interaction <strong>in</strong> Semiconductors<br />
SOI <strong>in</strong> semiconductors is closely related to break<strong>in</strong>g <strong>of</strong> symmetries which lift sp<strong>in</strong><br />
degeneracy: In the case without magnetic field B we start with a tw<strong>of</strong>old degeneracy: Time<br />
<strong>in</strong>version symmetry, E ↑ (k) = E ↓ (−k) and space <strong>in</strong>version symmetry, E ↑ (k) = E ↑ (−k). As<br />
a consequence we have E ↑ (k) = E ↓ (k). In the follow<strong>in</strong>g we show how the degeneracy is<br />
lifted <strong>in</strong> semiconductor devices <strong>in</strong> case <strong>of</strong> B = 0.<br />
While silicon and germanium have <strong>in</strong> their diamond structure an <strong>in</strong>version symmetry<br />
around every midpo<strong>in</strong>t on each l<strong>in</strong>e connect<strong>in</strong>g nearest neighbor atoms, this is not<br />
the case for III-V-semiconductors like GaAs, InAs, InSb, or ZnS. These have a z<strong>in</strong>c-blende<br />
structure which can be obta<strong>in</strong>ed from a diamond structure with neighbored sites occupied<br />
by the two different elements. Therefore the <strong>in</strong>version symmetry is broken, which results<br />
<strong>in</strong> sp<strong>in</strong>-orbit coupl<strong>in</strong>g. This can be understood by notic<strong>in</strong>g that pairs like Ga-As are local<br />
dipoles whose electric field is responsible for SOC if <strong>in</strong>version symmetry is broken 2 . Similarly,<br />
that symmetry is broken <strong>in</strong> II-VI-semiconductors. This bulk <strong>in</strong>version asymmetry<br />
(BIA) coupl<strong>in</strong>g, or <strong>of</strong>ten so called Dresselhaus-coupl<strong>in</strong>g, is anisotropic, as given by [Dre55]<br />
[<br />
H D = γ D σx k x (ky 2 −k2 z )+σ yk y (kz 2 −k2 x )+σ zk z (kx 2 −k2 y )] , (2.13)<br />
where γ D is the Dresselhaus-sp<strong>in</strong>-orbit coefficient. Band structure calculations yield the<br />
follow<strong>in</strong>g values: γ D = 27.6 eVÅ(GaAs), = 27.2 eVÅ(InAs), = 760.1 eVÅ(InSb) [W<strong>in</strong>03].<br />
Some values extracted <strong>in</strong> experiments are listed <strong>in</strong> Tab.A. Conf<strong>in</strong>ement <strong>in</strong> quantum wells<br />
with width a z on the order <strong>of</strong> the Fermi wave length λ F yields accord<strong>in</strong>gly a sp<strong>in</strong>-orbit<br />
<strong>in</strong>teraction where the momentum <strong>in</strong> growth direction is <strong>of</strong> the order <strong>of</strong> 1/a z . Because<br />
<strong>of</strong> the anisotropy <strong>of</strong> the Dresselhaus term, the sp<strong>in</strong>-orbit <strong>in</strong>teraction depends strongly on<br />
the growth direction <strong>of</strong> the quantum well. Grown <strong>in</strong> [001] direction, one gets, tak<strong>in</strong>g the<br />
expectation value <strong>of</strong> Eq.(2.13) <strong>in</strong> the direction normal to the plane, not<strong>in</strong>g that 〈k z 〉 =<br />
〈kz〉 3 = 0, [Dre55]<br />
H D[001] = α 1 (−σ x k x +σ y k y )+γ D (σ x k x ky 2 −σ y k y kx). 2 (2.14)<br />
where α 1 = γ D 〈kz〉 2 is the l<strong>in</strong>ear Dresselhaus parameter. Thus, <strong>in</strong>sert<strong>in</strong>g an electron with<br />
momentum along the x-direction, with its sp<strong>in</strong> <strong>in</strong>itially polarized <strong>in</strong> z-direction, it will<br />
2 Start<strong>in</strong>g from an extended Kane model where p-like higher energy bands are <strong>in</strong>cluded one gets a Hamiltonian<br />
with matrix elements which are only nonzero if the crystal has no center <strong>of</strong> <strong>in</strong>version.[FMAE + 07]