Itinerant Spin Dynamics in Structures of ... - Jacobs University
Itinerant Spin Dynamics in Structures of ... - Jacobs University Itinerant Spin Dynamics in Structures of ... - Jacobs University
130 Appendix A: SOC Strength in the Experiment System Spin splitting at E F α 2 Reference (meV) (meV Å) AlSb/InAs/AlSb 3.2 - 4.5 60 [HvWK + 98] AlSb/InAs/AlSb 0 0 [BEW + 99] AlSb/InAs/AlSb 0 0 [SAYI99] AlGaAs/GaAs/AlGaAs - 6.9±0.4 [JRA + 95] 2DEG GaAs/AlGaAs - 5±1 [MZM + 03] AlGaSb/InAs/AlSb 5.6 - 13 120 - 280 [SAYI99] InAlAs/InGaAs/InAlAs 1.5 40 [DMD + 89] InAlAs/InGaAs/InAlAs 4.9 - 5.9 63 - 93 [NATE97] InAlAs/InGaAs/InAlAs - 50 - 100 [HNA + 99] InGaAs/InAs/InGaAs 5.1 - 6.8 60 - 110 [NATE98] InGaAs/InAs/InGaAs 9 - 15 200 - 400 [Gru00] InGaAs/InP/InGaAs - 63 - 153 [ELSL97] GaSb/InAs/GaSb 3.7 90 [LMFS88] Si/SiGe QW - 0.03 - 0.12 [MJM + 04] SiO2/InAs/ 5.5 - 23 100 - 300 [MKMM00] n-In 0.2 Ga 0.8 As/GaAs QW 50-70 [HSM + 06] Table A.1: Values of Rashba parameter α 2 measured in experiments [QW=quantum wire]. (List extracted from[FMAE + 07].) Parameter AlAs AlP AlSb GaAs GaP GaSb InAs InP InSb m e 0.15 0.22 0.14 0.067 0.13 0.039 0.026 0.0795 0.0135 Table A.2: Experimental values of m e [VMRM01] System γ D (eV Å 3 ) Reference GaAs 24.5 [MST83] GaAs 17.4 - 26 [PMT88] GaAs 26.1±0.9 [DPWS92] GaAs 16.5±3 [JRA + 95] GaAs 11 [RJA + 96] GaAs 9 [KH07] GaAs 28±4 [MZM + 03] InGaAs 24 [KSZ + 96] Table A.3: Values of Dresselhaus parameter γ D measured in experiments. (List extracted from[FMAE + 07].)
Appendix A: SOC Strength in the Experiment 131 material QW width spacer 1 spacer 2 mobility density α 2 /α 1 α ′ 2 /α′ 1 Å Å Å (cm 2 /Vs) cm −2 SGE CPGE InAs/AlGaSb 150 3.0×10 5 8×10 11 2.1 2.3 InAs/AlGaSb 150 2.0×10 5 1.4×10 12 1.8 InAs/InAlAs 60 75 1.1×10 5 7.7×10 11 1.6 GaAs/AlGaAs ∞ 700 3.5×10 6 1.1×10 11 7.6 7.6 GaAs/AlGaAs 82 50 50 2.6×10 6 9.3×10 11 -4.5 -4.2 GaAs/AlGaAs 150 600 300 1.0×10 5 6.6×10 11 -3.8 GaAs/AlGaAs 150 400 500 2.6×10 5 5.3×10 11 -2.4 GaAs/AlGaAs 300 700 3.2×10 6 1.3×10 11 2.8 GaAs/AlGaAs 300 700 1000 3.4×10 6 1.8×10 11 1.5 Table A.4: Measured α 2 /α 1 ratios with spin-galvanic effect (SGE) and Circular photogalvaniceffect(CPGE)withtheaccordingparametersat4.2K [QW=quantumwire].[GGB + 07]
- Page 89 and 90: Chapter 4: Direction Dependence of
- Page 91 and 92: Chapter 4: Direction Dependence of
- Page 93 and 94: Chapter 5 Spin Hall Effect 5.1 Intr
- Page 95 and 96: Chapter 5: Spin Hall Effect 85 curr
- Page 97 and 98: Chapter 5: Spin Hall Effect 87 with
- Page 99 and 100: Chapter 5: Spin Hall Effect 89 1.0
- Page 101 and 102: Chapter 5: Spin Hall Effect 91 as s
- Page 103 and 104: Chapter 5: Spin Hall Effect 93 V⩵
- Page 105 and 106: Chapter 5: Spin Hall Effect 95 0.4
- Page 107 and 108: Chapter 5: Spin Hall Effect 97 oper
- Page 109 and 110: Chapter 5: Spin Hall Effect 99 the
- Page 111 and 112: Chapter 5: Spin Hall Effect 101 str
- Page 113 and 114: Chapter 5: Spin Hall Effect 103 Com
- Page 115 and 116: Chapter 5: Spin Hall Effect 105 Fin
- Page 117 and 118: Chapter 6: Critical Discussion and
- Page 119 and 120: Chapter 6: Critical Discussion and
- Page 121 and 122: List of Figures 111 3.3 Exemplifica
- Page 123 and 124: List of Figures 113 4.2 The spin de
- Page 125 and 126: List of Tables 3.1 Singlet and trip
- Page 127 and 128: Bibliography 117 [BB04] [BBF + 88]
- Page 129 and 130: Bibliography 119 [DP71b] [DP71c] [D
- Page 131 and 132: Bibliography 121 [HSM + 06] [HSM +
- Page 133 and 134: Bibliography 123 [MACR06] T. Mickli
- Page 135 and 136: Bibliography 125 [PMT88] [PP95] [PT
- Page 137 and 138: Bibliography 127 [Tor56] H. C. Torr
- Page 139: Appendix A SOC Strength in the Expe
- Page 143 and 144: Appendix B: Linear Response 133 in
- Page 145 and 146: Appendix B: Linear Response 135 Pro
- Page 147 and 148: Appendix C Cooperon and Spin Relaxa
- Page 149 and 150: Appendix C: Cooperon and Spin Relax
- Page 151 and 152: Appendix C: Cooperon and Spin Relax
- Page 153 and 154: Appendix C: Cooperon and Spin Relax
- Page 155 and 156: Appendix C: Cooperon and Spin Relax
- Page 157 and 158: Appendix D: Hamiltonian in [110] gr
- Page 159 and 160: Appendix E: Summation over the Ferm
- Page 161: Appendix F: KPM 151 integer running
130 Appendix A: SOC Strength <strong>in</strong> the Experiment<br />
System <strong>Sp<strong>in</strong></strong> splitt<strong>in</strong>g at E F α 2 Reference<br />
(meV) (meV Å)<br />
AlSb/InAs/AlSb 3.2 - 4.5 60 [HvWK + 98]<br />
AlSb/InAs/AlSb 0 0 [BEW + 99]<br />
AlSb/InAs/AlSb 0 0 [SAYI99]<br />
AlGaAs/GaAs/AlGaAs - 6.9±0.4 [JRA + 95]<br />
2DEG GaAs/AlGaAs - 5±1 [MZM + 03]<br />
AlGaSb/InAs/AlSb 5.6 - 13 120 - 280 [SAYI99]<br />
InAlAs/InGaAs/InAlAs 1.5 40 [DMD + 89]<br />
InAlAs/InGaAs/InAlAs 4.9 - 5.9 63 - 93 [NATE97]<br />
InAlAs/InGaAs/InAlAs - 50 - 100 [HNA + 99]<br />
InGaAs/InAs/InGaAs 5.1 - 6.8 60 - 110 [NATE98]<br />
InGaAs/InAs/InGaAs 9 - 15 200 - 400 [Gru00]<br />
InGaAs/InP/InGaAs - 63 - 153 [ELSL97]<br />
GaSb/InAs/GaSb 3.7 90 [LMFS88]<br />
Si/SiGe QW - 0.03 - 0.12 [MJM + 04]<br />
SiO2/InAs/ 5.5 - 23 100 - 300 [MKMM00]<br />
n-In 0.2 Ga 0.8 As/GaAs QW 50-70 [HSM + 06]<br />
Table A.1: Values <strong>of</strong> Rashba parameter α 2 measured <strong>in</strong> experiments [QW=quantum wire].<br />
(List extracted from[FMAE + 07].)<br />
Parameter AlAs AlP AlSb GaAs GaP GaSb InAs InP InSb<br />
m e 0.15 0.22 0.14 0.067 0.13 0.039 0.026 0.0795 0.0135<br />
Table A.2: Experimental values <strong>of</strong> m e [VMRM01]<br />
System γ D (eV Å 3 ) Reference<br />
GaAs 24.5 [MST83]<br />
GaAs 17.4 - 26 [PMT88]<br />
GaAs 26.1±0.9 [DPWS92]<br />
GaAs 16.5±3 [JRA + 95]<br />
GaAs 11 [RJA + 96]<br />
GaAs 9 [KH07]<br />
GaAs 28±4 [MZM + 03]<br />
InGaAs 24 [KSZ + 96]<br />
Table A.3: Values <strong>of</strong> Dresselhaus parameter γ D measured <strong>in</strong> experiments. (List extracted<br />
from[FMAE + 07].)
Change language