Itinerant Spin Dynamics in Structures of ... - Jacobs University
Itinerant Spin Dynamics in Structures of ... - Jacobs University Itinerant Spin Dynamics in Structures of ... - Jacobs University
92 Chapter 5: Spin Hall Effect result is presented in Fig.5.3. For small V one would expect the Van Hove singularity at half filling. Due to finite Rashba SOC it is split to finite energies E = ±(2t− √ 4+α 2 2 t), indicated in Fig.5.1 for the energy below half filling. If the impurity strength is increased, a preformed impurity band is created. Using exact diagonalization 1 and applying the Kubo formalism, Eq.5.22, we calculate the SHC. Exemplarily we show the result for σ SH (E) at V = −2.8t in Fig.5.4. The SHC is strongly reduced but shows an additional maximum at energy where the preformed impurity band is located, as can be seen in comparison with the DOS, Fig.5.4(b). Toanalyze thereduction ofSHCfor agiven fillingn, wevary theimpuritystrength up to V = −5t and keep the concentration constant at 10%. Similar to the results in the case of block distribution of impurity strength, we see a monotone suppression at all fillings, even in the preformed impurity band, Fig.5.5. 5.3.2 Kernel Polynomial Method The numerical calculations presented in the previous section, which were based on exact diagonalization using LAPACK[LAP] routines, are limited to small system sizes. This leads to finite size effects like oscillations in the SHC, e.g. Fig.5.4(b) above half filling. For further calculations concerning the role of the impurity band it is necessary to do a finite size scaling analysis and consider system-sizes beyond L = 64 which makes an exact treatment on current hardware impossible: for a D-dimensional matrix such a calculation requires memory of the order of D 2 , and the LAPACK routine scales as D 3 . Another problem is the adjustment of the cutoff η, see Eq.(5.22), which has to be taken with care as analyzed e.g. by Nomura et al., Ref.[NSSM05]. Toovercome thelimitation onsmall systems, therearedifferent numerical order-Dmethods. Oneprocedureisthetimeevolution projection methoddevelopedbyTanakaandItoh[TI98], which was already used to calculate SHC[MMF08, MM07]. However, the algorithm requires both the choice of a sufficient number of time steps and an adjustment of cutoff η. A more effective method, which uses Chebyshev expansion based on Kernel Polynomial Method, will be presented in the following. 1 using LAPACK[LAP] and OpenMP[OMP] in C++
Chapter 5: Spin Hall Effect 93 V⩵0.2 V⩵2.8 0.20 0.15 Ρ 0.15 0.10 0.05 Ρ 0.10 0.05 0.00 10 5 0 5 10 E 0.00 10 5 0 5 10 E V⩵ 3 V⩵ 3.6 0.15 0.15 Ρ 0.10 Ρ 0.10 0.05 0.05 0.00 10 5 0 5 10 E 0.00 10 5 0 5 10 E V⩵4 V⩵5 0.15 0.15 0.10 0.10 Ρ Ρ 0.05 0.05 0.00 10 5 0 5 10 E 0.00 10 5 0 5 10 E Figure 5.3: DOS, as a function of Fermi energy in units of t, in presence of impurities of binary type with a concentration of 10% calculated using exact diagonalization. The system size is L 2 = 32 2 , and the SOC is Rashba type with α 2 = 1.2t with cutoff η = 0.02t.
- Page 51 and 52: Chapter 3: WL/WAL Crossover and Spi
- Page 53 and 54: Chapter 3: WL/WAL Crossover and Spi
- Page 55 and 56: Chapter 3: WL/WAL Crossover and Spi
- Page 57 and 58: Chapter 3: WL/WAL Crossover and Spi
- Page 59 and 60: Chapter 3: WL/WAL Crossover and Spi
- Page 61 and 62: Chapter 3: WL/WAL Crossover and Spi
- Page 63 and 64: Chapter 3: WL/WAL Crossover and Spi
- Page 65 and 66: Chapter 3: WL/WAL Crossover and Spi
- Page 67 and 68: Chapter 3: WL/WAL Crossover and Spi
- Page 69 and 70: Chapter 3: WL/WAL Crossover and Spi
- Page 71 and 72: Chapter 3: WL/WAL Crossover and Spi
- Page 73 and 74: Chapter 3: WL/WAL Crossover and Spi
- Page 75 and 76: Chapter 3: WL/WAL Crossover and Spi
- Page 77 and 78: Chapter 4 Direction Dependence of S
- Page 79 and 80: Chapter 4: Direction Dependence of
- Page 81 and 82: Chapter 4: Direction Dependence of
- Page 83 and 84: Chapter 4: Direction Dependence of
- Page 85 and 86: Chapter 4: Direction Dependence of
- Page 87 and 88: Chapter 4: Direction Dependence of
- Page 89 and 90: Chapter 4: Direction Dependence of
- Page 91 and 92: Chapter 4: Direction Dependence of
- Page 93 and 94: Chapter 5 Spin Hall Effect 5.1 Intr
- Page 95 and 96: Chapter 5: Spin Hall Effect 85 curr
- Page 97 and 98: Chapter 5: Spin Hall Effect 87 with
- Page 99 and 100: Chapter 5: Spin Hall Effect 89 1.0
- Page 101: Chapter 5: Spin Hall Effect 91 as s
- Page 105 and 106: Chapter 5: Spin Hall Effect 95 0.4
- Page 107 and 108: Chapter 5: Spin Hall Effect 97 oper
- Page 109 and 110: Chapter 5: Spin Hall Effect 99 the
- Page 111 and 112: Chapter 5: Spin Hall Effect 101 str
- Page 113 and 114: Chapter 5: Spin Hall Effect 103 Com
- Page 115 and 116: Chapter 5: Spin Hall Effect 105 Fin
- Page 117 and 118: Chapter 6: Critical Discussion and
- Page 119 and 120: Chapter 6: Critical Discussion and
- Page 121 and 122: List of Figures 111 3.3 Exemplifica
- Page 123 and 124: List of Figures 113 4.2 The spin de
- Page 125 and 126: List of Tables 3.1 Singlet and trip
- Page 127 and 128: Bibliography 117 [BB04] [BBF + 88]
- Page 129 and 130: Bibliography 119 [DP71b] [DP71c] [D
- Page 131 and 132: Bibliography 121 [HSM + 06] [HSM +
- Page 133 and 134: Bibliography 123 [MACR06] T. Mickli
- Page 135 and 136: Bibliography 125 [PMT88] [PP95] [PT
- Page 137 and 138: Bibliography 127 [Tor56] H. C. Torr
- Page 139 and 140: Appendix A SOC Strength in the Expe
- Page 141 and 142: Appendix A: SOC Strength in the Exp
- Page 143 and 144: Appendix B: Linear Response 133 in
- Page 145 and 146: Appendix B: Linear Response 135 Pro
- Page 147 and 148: Appendix C Cooperon and Spin Relaxa
- Page 149 and 150: Appendix C: Cooperon and Spin Relax
- Page 151 and 152: Appendix C: Cooperon and Spin Relax
Chapter 5: <strong>Sp<strong>in</strong></strong> Hall Effect 93<br />
V⩵0.2<br />
V⩵2.8<br />
0.20<br />
0.15<br />
Ρ<br />
0.15<br />
0.10<br />
0.05<br />
Ρ<br />
0.10<br />
0.05<br />
0.00<br />
10 5 0 5 10<br />
E<br />
0.00<br />
10 5 0 5 10<br />
E<br />
V⩵ 3<br />
V⩵ 3.6<br />
0.15<br />
0.15<br />
Ρ<br />
0.10<br />
Ρ<br />
0.10<br />
0.05<br />
0.05<br />
0.00<br />
10 5 0 5 10<br />
E<br />
0.00<br />
10 5 0 5 10<br />
E<br />
V⩵4<br />
V⩵5<br />
0.15<br />
0.15<br />
0.10<br />
0.10<br />
Ρ<br />
Ρ<br />
0.05<br />
0.05<br />
0.00<br />
10 5 0 5 10<br />
E<br />
0.00<br />
10 5 0 5 10<br />
E<br />
Figure 5.3: DOS, as a function <strong>of</strong> Fermi energy <strong>in</strong> units <strong>of</strong> t, <strong>in</strong> presence <strong>of</strong> impurities <strong>of</strong><br />
b<strong>in</strong>ary type with a concentration <strong>of</strong> 10% calculated us<strong>in</strong>g exact diagonalization. The system<br />
size is L 2 = 32 2 , and the SOC is Rashba type with α 2 = 1.2t with cut<strong>of</strong>f η = 0.02t.