Films minces à base de Si nanostructuré pour des cellules ...
Films minces à base de Si nanostructuré pour des cellules ...
Films minces à base de Si nanostructuré pour des cellules ...
Create successful ePaper yourself
Turn your PDF publications into a flip-book with our unique Google optimized e-Paper software.
such a peak was witnessed in [Quiroga 09]. Therefore it may be supposed in our<br />
case, that while forming agglomerates oxygen may be trapped within the <strong>Si</strong> core<br />
resulting in such a peak. However, at this stage it is not possible to say certainly<br />
if the appearance of this peak with <strong>Si</strong> excess is due to an increase in disor<strong>de</strong>r or<br />
formation of oxygen trapped <strong>Si</strong> agglomerates.<br />
It can be seen from the inset of gure 3.6 that both LO 3 and TO 3 peak positions<br />
shift towards lower wavenumbers with increasing r H except for the highest hydrogen<br />
rate. The shift towards lower wavenumbers with increasing <strong>Si</strong> excess till r H =26%<br />
may be explained with the force constant mo<strong>de</strong>l. As the <strong>Si</strong> content increases, the<br />
bond angle of <strong>Si</strong>-O-<strong>Si</strong> <strong>de</strong>creases from 180° as per force constant mo<strong>de</strong>l (Eqn. 3.13)<br />
and hence the LO 3 mo<strong>de</strong> shifts towards lower wavenumbers [Pai 86, Lucovsky 87]<br />
ν 2 = (k/m 0 )sin 2 (φ/2) Eqn (3.13)<br />
tel-00916300, version 1 - 10 Dec 2013<br />
where ν is the frequency of vibration, k is the nearest neighbour force constant,<br />
m 0 is the mass of oxygen and φ is the <strong>Si</strong>-O-<strong>Si</strong> bond angle. The shift of the peak<br />
positions towards higher wavenumbers (towards <strong>Si</strong>O 2 ) in the case of r H = 57%<br />
may support the previous argument of oxygen trapped by the <strong>Si</strong> core while forming<br />
agglomerates.<br />
(c) <strong>Si</strong> excess estimation<br />
In or<strong>de</strong>r to consi<strong>de</strong>r a balance between r d , n 1.95eV and material composition, it is<br />
important to have an estimate of the <strong>Si</strong> excess. The <strong>Si</strong> excess was estimated from<br />
FTIR analysis (unbon<strong>de</strong>d <strong>Si</strong>) within an uncertainity of ±0.2%, and ellipsometry<br />
(Bruggemann method-agglomerated <strong>Si</strong>) analysis within an uncertainity of ±3% as<br />
<strong>de</strong>tailed before. Table 3.4 consolidates the value of <strong>Si</strong> excess obtained by these<br />
methods.<br />
r H (%) ν T O3 x = 0/<strong>Si</strong><br />
from FTIR<br />
<strong>Si</strong> excess (at.%)<br />
from FTIR<br />
(unbon<strong>de</strong>d <strong>Si</strong>)<br />
x = 0/<strong>Si</strong><br />
from<br />
ellipsometry<br />
<strong>Si</strong> excess (at.%)<br />
from<br />
ellipsometry<br />
(agglomerated<br />
<strong>Si</strong>)<br />
4.6 1068 1.86 2.33 1.99 0.217<br />
11.7 1064 1.82 3.26 1.87 2.33<br />
26 1065 1.82 3.26 1.64 6.76<br />
57 1069 1.87 2.14 1.61 7.55<br />
Table 3.4:<br />
varying r H .<br />
<strong>Si</strong> excess estimation by FTIR and refractive in<strong>de</strong>x analysis with regard to<br />
69