Films minces à base de Si nanostructuré pour des cellules ...
Films minces à base de Si nanostructuré pour des cellules ... Films minces à base de Si nanostructuré pour des cellules ...
tel-00916300, version 1 - 10 Dec 2013 Figure 2.17: Step 1 and 2 of ellipsometry modelling. Informations extracted in this thesis ˆ The refractive index of the thin lm material is known from which we can estimate the composition of the lm in terms of Si excess. Using this refractive index, Si excess in the material can also be evaluated by calculations involving Bruggeman eective medium approximation [Bruggeman 35]. Contrary to the FTIR technique, Bruggeman calculations account for the nucleated Si particles but do not consider the fraction of free unbounded Si atoms or smaller agglomerates. ˆ The thickness of the sample is determined to a good degree of accuracy (
tel-00916300, version 1 - 10 Dec 2013 Figure 2.18: Step 3 and Step 4 of ellipsometry modelling. 2.2.8 Photoluminescence Spectroscopy Principle Photoluminescence (PL) spectroscopy is a non-destructive method that gives information on the electronic structure of materials. When a sample absorbs the incident photons, it gains excess energy and the electrons in the material get excited to permissible energy states (photo-excitation). When these electrons return to their ground states, the excess energy is released with (a radiative process) or without the emission of light (non-radiative process). The light emitted in a radiative process is called photoluminescence. Figure 2.19 illustrates the processes explained above for an incident light at 488 nm and emission between 700-900 nm range. The radiative transitions in semiconductors may also involve localized levels and defect states in addition to the bandgap transitions. In this case, the PL analysis also leads to the 55
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tel-00916300, version 1 - 10 Dec 2013<br />
Figure 2.18: Step 3 and Step 4 of ellipsometry mo<strong>de</strong>lling.<br />
2.2.8 Photoluminescence Spectroscopy<br />
Principle<br />
Photoluminescence (PL) spectroscopy is a non-<strong>de</strong>structive method that gives information<br />
on the electronic structure of materials. When a sample absorbs the<br />
inci<strong>de</strong>nt photons, it gains excess energy and the electrons in the material get excited<br />
to permissible energy states (photo-excitation). When these electrons return to their<br />
ground states, the excess energy is released with (a radiative process) or without the<br />
emission of light (non-radiative process). The light emitted in a radiative process is<br />
called photoluminescence. Figure 2.19 illustrates the processes explained above for<br />
an inci<strong>de</strong>nt light at 488 nm and emission between 700-900 nm range. The radiative<br />
transitions in semiconductors may also involve localized levels and <strong>de</strong>fect states in<br />
addition to the bandgap transitions. In this case, the PL analysis also leads to the<br />
55