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tel-00916300, version 1 - 10 Dec 2013 4 A study on RF sputtered SiN x single layers and SRSO/SiN x multilayers 91 4.1 Introduction . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 91 4.2 N 2 -Reactive sputtering of Si cathode . . . . . . . . . . . . . . . . . . 92 4.2.1 Refractive index (n 1.95eV ) and Deposition rates (r d ) . . . . . . 92 4.2.2 Structural analysis . . . . . . . . . . . . . . . . . . . . . . . . 93 4.2.3 Optical properties . . . . . . . . . . . . . . . . . . . . . . . . . 97 4.3 Cosputtering of Si 3 N 4 and Si cathodes . . . . . . . . . . . . . . . . . 99 4.3.1 Refractive index (n 1.95eV ) and Deposition rates (r d ) . . . . . . 99 4.3.2 Structural analysis . . . . . . . . . . . . . . . . . . . . . . . . 100 4.3.3 Optical properties . . . . . . . . . . . . . . . . . . . . . . . . . 104 4.4 Summary . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 105 4.5 SRSO/SRSN multilayer . . . . . . . . . . . . . . . . . . . . . . . . . 106 4.5.1 Ellipsometry . . . . . . . . . . . . . . . . . . . . . . . . . . . 107 4.5.2 X-Ray Reectivity . . . . . . . . . . . . . . . . . . . . . . . . 108 4.5.3 Fourier transform infrared spectroscopy . . . . . . . . . . . . . 109 4.5.4 Surface Microstructure . . . . . . . . . . . . . . . . . . . . . . 111 4.5.5 X-Ray Diraction . . . . . . . . . . . . . . . . . . . . . . . . . 111 4.5.6 High Resolution-Transmission Electron Microscopy . . . . . . 112 4.5.7 Optical properties . . . . . . . . . . . . . . . . . . . . . . . . . 113 4.6 Eect of annealing treatment under N 2 ow . . . . . . . . . . . . . . 115 4.6.1 T A =400°C: . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 116 4.6.2 T A =700°C: . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 116 4.6.3 T A =900°C: . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 117 4.6.4 T A =1000°C: . . . . . . . . . . . . . . . . . . . . . . . . . . . . 118 4.6.5 Inuence of short time and long time annealing on emission . 118 4.6.6 Structural analysis on STA SRSO/SRSN ML . . . . . . . . . . 119 4.7 Eect of number of patterns on emission . . . . . . . . . . . . . . . . 121 4.8 Eect of SRSN sublayer thickness on structural and optical properties 122 4.9 Optimizing annealing treatments . . . . . . . . . . . . . . . . . . . . 124 4.9.1 Forming gas annealing versus annealing time . . . . . . . . . . 125 4.9.2 Short time annealing (STA) + Forming gas annealing . . . . . 127 4.9.3 Forming gas annealing + Short time annealing (STA) . . . . . 127 4.10 Understanding the origin of photoluminescence . . . . . . . . . . . . . 128 4.10.1 Role of defects in the matrix . . . . . . . . . . . . . . . . . . . 129 4.10.2 Eect of Si-np Size distribution . . . . . . . . . . . . . . . . . 131 4.10.3 Eect of surface microstructure . . . . . . . . . . . . . . . . . 131 iii
tel-00916300, version 1 - 10 Dec 2013 4.11 Summary on SRSO/SRSN MLs . . . . . . . . . . . . . . . . . . . . . 132 4.12 Conclusion . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 134 5 Photoluminescence emission modeling in Si-based thin lms 137 5.1 Introduction . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 137 5.2 Incident pump prole . . . . . . . . . . . . . . . . . . . . . . . . . . . 138 5.2.1 Methodology : Matrix formulation for Isotropic layered media 138 5.2.2 Incident electric eld amplitude, A 1 . . . . . . . . . . . . . . . 140 5.2.3 Pump prole in the thin lm . . . . . . . . . . . . . . . . . . . 140 5.3 Emission modeling . . . . . . . . . . . . . . . . . . . . . . . . . . . . 145 5.3.1 Single emitter modeling . . . . . . . . . . . . . . . . . . . . . 146 5.3.2 Population rate equations . . . . . . . . . . . . . . . . . . . . 148 5.3.3 Dynamical losses and gain . . . . . . . . . . . . . . . . . . . . 150 5.4 Discussion on the choice of input parameters . . . . . . . . . . . . . . 153 5.4.1 Absorption and Emission cross-sections . . . . . . . . . . . . 153 5.4.2 Lifetime of Si-np in dierent MLs . . . . . . . . . . . . . . . . 153 5.4.3 Absorption and emission wavelengths . . . . . . . . . . . . . 154 5.5 Modeling SRSO/SiO 2 MLs . . . . . . . . . . . . . . . . . . . . . . . . 154 5.5.1 Origin of two emission peaks . . . . . . . . . . . . . . . . . . . 155 5.5.2 Inuence of t SiO2 on the PL intensity . . . . . . . . . . . . . . 160 5.6 Modeling SRSO/SRSN MLs . . . . . . . . . . . . . . . . . . . . . . . 163 5.7 Summary . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 165 5.8 Conclusion . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 166 Conclusion and future perspectives 167 Bibliography 171 Appendix I 188 Appendix II 191 Appendix III 192 iv
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Page 5: 2.1.1 Radiofrequency Magnetron Reac
Page 11 and 12: 3.21 Inuence of sublayer thicknesse
Page 19 and 20: Introduction State of the art tel-0
Page 21 and 22: as the thickness of the lm, the pat
Page 23 and 24: Chapter 1 Role of Silicon in Photov
Page 25 and 26: mono-, poly- and amorphous silicon,
Page 27 and 28: Figure 1.3: A typical solar cell ar
Page 29 and 30: occurance of this three body event
Page 33 and 34: Shockley-Queisser limit of 31% [Sho
Page 41 and 42: Figure 1.12: materials. Energy diag
Page 45 and 46: Background of this thesis: A new me
Page 47 and 48: Chapter 2 Experimental techniques a
Page 49 and 50: maximum power into the plasma. (a)
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to equation 2.4, when X-ray beam st
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investigation. This value is obtain
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e seen that large θ (here, θ is u
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Figure 2.12: Raman spectrometer-Sch
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Experimental set-up and working tel
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ˆ The presence of Si from SiO 2 or
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2.2.7 Spectroscopic Ellipsometry Pr
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k(E) = f j(ω − ω g ) 2 (ω −
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Figure 2.20: Schematic diagram of t
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Chapter 3 A study on RF sputtered S
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(a) Deposition rate. (b) Refractive
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Thus, by knowing the refractive ind
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tel-00916300, version 1 - 10 Dec 20
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P Ar (mTorr) P H2 (mTorr) r H (%) 1
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such a peak was witnessed in [Quiro
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the host SiO 2 matrix leading to an
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initiated in this thesis, for the g
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P Si (W/cm 2 ) x = 0/Si Bruggemann
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tel-00916300, version 1 - 10 Dec 20
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Figure 3.15: Absorption coecient cu
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Aim of the study To see the inuence
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It can be seen that there is a sign
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3.8.4 Inuence of SiO 2 barrier thic
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Chapter 4 A study on RF sputtered S
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4.2.2 Structural analysis (a) Fouri
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(a) FTIR spectra of NRSN, Si 3 N 4
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Figure 4.15: Absorption coecient sp
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A multilayer composed of 100 patter
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multilayered conguration. Therefore
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around 1250 cm −1 . The blueshift
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tion but within a dierence of one o
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sample peak 1 (eV) peak 2 (eV) peak
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(a) 1min annealing vs. T A . (b) 1h
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(a) Brewster incidence. (b) Normal
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increases for the 50 patterned samp
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- Peak (3) and (c): 1.8-1.95 eV Die
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4.10.2 Eect of Si-np Size distribut
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Chapter 5 Photoluminescence emissio
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As seen from gure 5.1, a part of th
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function of wavelength consists of
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In the case of our multilayers, the
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⎛ ⎜ ⎝ A ′ 2 B ′ 2 1 ⎞
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dN 3 dt = N 2 τ 23 − (σ em. φ
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Figure 5.12: The shapes of k(λ) an
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5.4 Discussion on the choice of inp
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tting operations show the presence
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(a) 270nm. (b) 300nm. tel-00916300,
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(a) σ emis.max. = 8.78 x 10 −18
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(a) 50(3/1.5) (b) 50(3/3) tel-00916
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(a) Integrated population of excite
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two kinds of emitters in SRSO subla
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Conclusion and future perspectives
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4. Investigating the origin of phot
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Bibliography [Abeles 83] B. Abeles
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[Carlson 76] D. E. Carlson & C. R.
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[Di 10] D. Di, I. Perez-Wur, G. Con
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[Gritsenko 99] V. A. Gritsenko, K.
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[Kaiser 56] W. Kaiser, P. H. Kech &
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[Mandelkorn 62] J. Mandelkorn, C. M
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[Pavesi 00] L. Pavesi, L. D. Negro,
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[Sopori 96] B. L. Sopori, X. Deng,
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[Weng 93] Y. M. Weng, Zh. N. fan &
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and the tangential components of th
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Appendix II Trials σ em.max (x10
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Résumé tel-00916300, version 1 -
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