Films minces à base de Si nanostructuré pour des cellules ...
Films minces à base de Si nanostructuré pour des cellules ...
Films minces à base de Si nanostructuré pour des cellules ...
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ˆ The presence of <strong>Si</strong> from <strong>Si</strong>O 2 or silicon nitri<strong>de</strong> can be distinguished.<br />
2.2.6 Atom Probe Tomography<br />
Priniciple<br />
Atom probe tomography (APT) is a powerful 3D chemical microscope whose principle<br />
relies on the eld evaporation of the surface atoms from the specimen prepared in<br />
the form of a sharp tip, and their i<strong>de</strong>ntication by time-of-ight mass spectrometry.<br />
Surface atoms are evaporated using electric pulses V p ad<strong>de</strong>d to the DC voltage V 0<br />
and are collected on a position sensitive <strong>de</strong>tector. The time of ight of each evaporated<br />
ion between the electric pulse and the impact on the <strong>de</strong>tector is measured.<br />
This measurement permits to calculate the mass to charge ratio:<br />
tel-00916300, version 1 - 10 Dec 2013<br />
m<br />
n = 2EL2<br />
t 2 (V o + V p ) Eqn (2.8)<br />
where m is the mass of the evaporated ion (in kg), n its electronic charge, L the<br />
distance between the tip and the <strong>de</strong>tector (in m) and t the time of ight of the ion<br />
(in s). This calculation permits to i<strong>de</strong>ntify the chemical nature of evaporated ions.<br />
Experimental set-up and working<br />
APT analyses were carried out at Groupe <strong>de</strong> Physique <strong>de</strong>s Matèriaux, Université<br />
et INSA <strong>de</strong> Rouen on a Laser Assisted Wi<strong>de</strong>-Angle Tomographic Atom Probe (LA-<br />
WATAP). The radius of curvature of the sharp tip specimen must be smaller than<br />
50 nm in or<strong>de</strong>r to create a high electric eld. This is carried out with a focused ion<br />
beam (FIB) instrument. The Ga + ion beam is able to etch samples and nanoscaled<br />
structures can be extracted from bulk materials. In or<strong>de</strong>r to prevent any Ga ions<br />
implantation or sample <strong>de</strong>gradation, a sacricial platinum layer is <strong>de</strong>posited before<br />
every milling step (approximately 400 nm). This <strong>de</strong>position is realized directly in<br />
the FIB instrument using the gas injection system. The three step method which is<br />
commonly used to obtain a tip from the chunk state is illustrated gure 2.15.<br />
The rst step consists of etching a thin lamella of 2-4 µm of the sample (Fig.<br />
2.15a). Successive milling operations are operated on the chunk in or<strong>de</strong>r to extract<br />
posts. The second step consists in micromanipulating and mounting extracted posts<br />
on the top of a stainless steel needle using a Pt weld (Fig. 2.15b). During the nal<br />
step, the post is submitted to an annular milling. The post is located along the axis<br />
of the ion beam which due to annular motion successively cut concentric circles of<br />
the sample. By reducing the diameter of these circles, the post is thickened into a<br />
sharp tip with a curvature radius lower than 50 nm (Fig. 2.15c-e). To prevent ion<br />
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