Films minces à base de Si nanostructuré pour des cellules ...
Films minces à base de Si nanostructuré pour des cellules ... Films minces à base de Si nanostructuré pour des cellules ...
Figure 2.9: Schematic diagram of XRR set-up and the two modes of measurement. tel-00916300, version 1 - 10 Dec 2013 this critical angle gives access to the index of refraction of the surface layer by the law of Snell-Descarte (cosθ c =n). Region 2: When θ is greater than θ c , a part of the incident beam is transmitted into the layer where it undergoes multiple reections leading to the formation of interference. Since the substrate is optically denser than the lm, a phase dierence occurs at the lm surface and the substrate. The interference fringes lead to maxima and minima in the spectra. The dierence between two successive maxima in the reectivity spectra yields information on the thickness (d) of the lm or the sublayers forming the lm from the following formula, d= λ 2 √ sin 2 θ k+1 −sin 2 θ k Eqn (2.7) where λ= 1.54Å and θ k+1 and θ k represent the position of two successive maxima in the reectivity spectra. Similar calculations are done using a computer simulation in the laboratory that allows estimation of the sample thickness. For θ > θ c , the surface roughness causes a sharp decrease in the reected intensity and the other roughnesses below the surface (example: at the interfaces) reduces the amplitude of the reected peaks. If the contrast in the electronic densities of the sublayers are high enough, then their individual thicknesses can be estimated from the resulting XRR spectra as mentioned above. In the case of our samples, we can estimate only the pattern thickness. A typical XRR spectra obtained from a 14 patterned SRSO/SRSN ML grown with 4 nm SRSO and 5 nm SRSN of similar refractive indices is shown in gure 2.10 from which the total thickness and the pattern thickness (4 nm+5 nm) is estimated to a high degree of accuracy. From equation 2.7 it can 42
e seen that large θ (here, θ is used to denote the term √ sin 2 θ k+1 − sin 2 θ k ) corresponds to small thicknesses and hence from large θ we estimate the smaller pattern thickness and from small θ the total thickness. tel-00916300, version 1 - 10 Dec 2013 Figure 2.10: A typical XRR spectrum obtained from SRSO/SRSN ML with a zoom of the interferences leading to total thickness determination in the inset. (ii) In non-specular mode, the reection is obtained by xing the incident beam at θ c and moving the detector slightly around θ c , (θ c ±δθ). Rotating the detector around the critical angle enables detection of the scattered beams from a rough surface. High angular resolution is needed to separate the scattered beams from the reected ones. All the samples investigated in this thesis were analyzed using XRR in specular reection mode. Informations extracted in this thesis ˆ The thickness of each pattern in a multilayer lm. ˆ The total thickness of the lm. 2.2.4 Raman Spectroscopy Principle Raman spectroscopy is a complementary technique of FTIR and is very sensitive to homopolar bonds. Raman spectroscopy is a vibrational spectroscopic technique that relies on the principle of scattering of a monochromatic light by molecular vibrations and phonons. This scattering is classied into two parts: Elastic (Rayleigh) and 43
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Figure 2.9: Schematic diagram of XRR set-up and the two mo<strong>de</strong>s of measurement.<br />
tel-00916300, version 1 - 10 Dec 2013<br />
this critical angle gives access to the in<strong>de</strong>x of refraction of the surface layer by the<br />
law of Snell-Descarte (cosθ c =n).<br />
Region 2: When θ is greater than θ c , a part of the inci<strong>de</strong>nt beam is transmitted<br />
into the layer where it un<strong>de</strong>rgoes multiple reections leading to the formation of<br />
interference. <strong>Si</strong>nce the substrate is optically <strong>de</strong>nser than the lm, a phase dierence<br />
occurs at the lm surface and the substrate. The interference fringes lead to maxima<br />
and minima in the spectra. The dierence between two successive maxima in the<br />
reectivity spectra yields information on the thickness (d) of the lm or the sublayers<br />
forming the lm from the following formula,<br />
d=<br />
λ<br />
2 √ sin 2 θ k+1 −sin 2 θ k<br />
Eqn (2.7)<br />
where λ= 1.54Å and θ k+1 and θ k represent the position of two successive maxima<br />
in the reectivity spectra. <strong>Si</strong>milar calculations are done using a computer simulation<br />
in the laboratory that allows estimation of the sample thickness. For θ > θ c , the<br />
surface roughness causes a sharp <strong>de</strong>crease in the reected intensity and the other<br />
roughnesses below the surface (example: at the interfaces) reduces the amplitu<strong>de</strong> of<br />
the reected peaks. If the contrast in the electronic <strong>de</strong>nsities of the sublayers are<br />
high enough, then their individual thicknesses can be estimated from the resulting<br />
XRR spectra as mentioned above. In the case of our samples, we can estimate<br />
only the pattern thickness. A typical XRR spectra obtained from a 14 patterned<br />
SRSO/SRSN ML grown with 4 nm SRSO and 5 nm SRSN of similar refractive indices<br />
is shown in gure 2.10 from which the total thickness and the pattern thickness<br />
(4 nm+5 nm) is estimated to a high <strong>de</strong>gree of accuracy. From equation 2.7 it can<br />
42