Films minces à base de Si nanostructuré pour des cellules ...
Films minces à base de Si nanostructuré pour des cellules ... Films minces à base de Si nanostructuré pour des cellules ...
Contents List of Figures List of Tables List of abbreviations xii xiii xv tel-00916300, version 1 - 10 Dec 2013 Introduction 1 1 Role of Silicon in Photovoltaics 5 1.1 Energy needs in the global scenario . . . . . . . . . . . . . . . . . . . 5 1.2 Solar Photovoltaics . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 1.2.1 A brief history of PV cells . . . . . . . . . . . . . . . . . . . . 6 1.2.2 Three Generations of PV cells . . . . . . . . . . . . . . . . . . 7 1.3 Silicon in photovoltaic industry . . . . . . . . . . . . . . . . . . . . . 8 1.3.1 Crystalline Silicon- Advantages and Drawbacks . . . . . . . . 9 1.3.2 Amorphous Silicon - Advantages and Drawbacks . . . . . . . . 11 1.3.3 Alternate congurations of c-Si and a-Si for solar cells . . . . . 12 1.4 Advent of quantum eects in silicon nanostructures . . . . . . . . . . 14 1.4.1 Quantum Connement Eect (QCE) . . . . . . . . . . . . . . 15 1.4.2 Silicon nanostructures . . . . . . . . . . . . . . . . . . . . . . 16 1.4.3 Third Generation Solar Cell Approaches . . . . . . . . . . . . 18 1.5 Si Quantum Dots (QDs) in Photovoltaics . . . . . . . . . . . . . . . . 21 1.5.1 Porous Silicon (p-Si) . . . . . . . . . . . . . . . . . . . . . . . 22 1.5.2 Si Quantum Dots embedded in dielectric hosts . . . . . . . . . 22 1.5.3 Si Quantum Dots in multilayers . . . . . . . . . . . . . . . . . 25 1.6 Purpose and Aim of the thesis: . . . . . . . . . . . . . . . . . . . . . 26 2 Experimental techniques and analytical methods 29 2.1 Thin lm fabrication . . . . . . . . . . . . . . . . . . . . . . . . . . . 29 i
2.1.1 Radiofrequency Magnetron Reactive Sputtering . . . . . . . . 30 2.1.2 Sample preparation . . . . . . . . . . . . . . . . . . . . . . . . 32 2.1.3 Thermal treatment . . . . . . . . . . . . . . . . . . . . . . . . 34 2.2 Structural and Optical Characterization . . . . . . . . . . . . . . . . 34 2.2.1 Fourier Transform Infrared Spectroscopy (FTIR) . . . . . . . 35 2.2.2 X-Ray Diraction (XRD) . . . . . . . . . . . . . . . . . . . . 38 2.2.3 X- Ray Reectivity (XRR) . . . . . . . . . . . . . . . . . . . . 41 2.2.4 Raman Spectroscopy . . . . . . . . . . . . . . . . . . . . . . . 43 2.2.5 Electron Microscopy . . . . . . . . . . . . . . . . . . . . . . . 46 2.2.6 Atom Probe Tomography . . . . . . . . . . . . . . . . . . . . 49 2.2.7 Spectroscopic Ellipsometry . . . . . . . . . . . . . . . . . . . . 51 2.2.8 Photoluminescence Spectroscopy . . . . . . . . . . . . . . . . 55 tel-00916300, version 1 - 10 Dec 2013 3 A study on RF sputtered SRSO monolayers and SRSO/SiO 2 multilayers 59 3.1 Introduction . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 59 3.2 Reactive sputtering - Method 1 . . . . . . . . . . . . . . . . . . . . . 60 3.2.1 Eect of deposition temperature . . . . . . . . . . . . . . . . . 60 3.2.2 Eect of hydrogen gas rate (r H ) . . . . . . . . . . . . . . . . . 67 3.3 Co-Sputtering- Method 2 . . . . . . . . . . . . . . . . . . . . . . . . . 70 3.3.1 Deposition rate (r d ) and Refractive Index (n 1.95eV ) . . . . . . . 70 3.3.2 Fourier transorm infrared spectroscopy . . . . . . . . . . . . . 71 3.4 Reactive Co-sputtering- Method 3 . . . . . . . . . . . . . . . . . . . . 72 3.4.1 Eect of power density applied on Si cathode, (P Si ) . . . . . . 73 3.4.2 Eect of annealing . . . . . . . . . . . . . . . . . . . . . . . . 75 3.5 Summary on SRSO monolayers . . . . . . . . . . . . . . . . . . . . . 79 3.6 Role of the Hydrogen plasma . . . . . . . . . . . . . . . . . . . . . . 80 3.7 SRSO-P15 in a multilayer system: SRSO/SiO 2 . . . . . . . . . . . . . 81 3.7.1 Structural analysis . . . . . . . . . . . . . . . . . . . . . . . . 82 3.7.2 Emission properties . . . . . . . . . . . . . . . . . . . . . . . . 84 3.8 Inuence of sublayer thicknesses . . . . . . . . . . . . . . . . . . . . . 85 3.8.1 Fourier transform infrared spectroscopy . . . . . . . . . . . . . 85 3.8.2 Atom probe tomography . . . . . . . . . . . . . . . . . . . . 86 3.8.3 Photoluminescence . . . . . . . . . . . . . . . . . . . . . . . . 87 3.8.4 Inuence of SiO 2 barrier thickness . . . . . . . . . . . . . . . . 89 3.9 Summary on SRSO/SiO 2 multilayers . . . . . . . . . . . . . . . . . . 89 3.10 Conclusions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 90 ii
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2.1.1 Radiofrequency Magnetron Reactive Sputtering . . . . . . . . 30<br />
2.1.2 Sample preparation . . . . . . . . . . . . . . . . . . . . . . . . 32<br />
2.1.3 Thermal treatment . . . . . . . . . . . . . . . . . . . . . . . . 34<br />
2.2 Structural and Optical Characterization . . . . . . . . . . . . . . . . 34<br />
2.2.1 Fourier Transform Infrared Spectroscopy (FTIR) . . . . . . . 35<br />
2.2.2 X-Ray Diraction (XRD) . . . . . . . . . . . . . . . . . . . . 38<br />
2.2.3 X- Ray Reectivity (XRR) . . . . . . . . . . . . . . . . . . . . 41<br />
2.2.4 Raman Spectroscopy . . . . . . . . . . . . . . . . . . . . . . . 43<br />
2.2.5 Electron Microscopy . . . . . . . . . . . . . . . . . . . . . . . 46<br />
2.2.6 Atom Probe Tomography . . . . . . . . . . . . . . . . . . . . 49<br />
2.2.7 Spectroscopic Ellipsometry . . . . . . . . . . . . . . . . . . . . 51<br />
2.2.8 Photoluminescence Spectroscopy . . . . . . . . . . . . . . . . 55<br />
tel-00916300, version 1 - 10 Dec 2013<br />
3 A study on RF sputtered SRSO monolayers and<br />
SRSO/<strong>Si</strong>O 2 multilayers 59<br />
3.1 Introduction . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 59<br />
3.2 Reactive sputtering - Method 1 . . . . . . . . . . . . . . . . . . . . . 60<br />
3.2.1 Eect of <strong>de</strong>position temperature . . . . . . . . . . . . . . . . . 60<br />
3.2.2 Eect of hydrogen gas rate (r H ) . . . . . . . . . . . . . . . . . 67<br />
3.3 Co-Sputtering- Method 2 . . . . . . . . . . . . . . . . . . . . . . . . . 70<br />
3.3.1 Deposition rate (r d ) and Refractive In<strong>de</strong>x (n 1.95eV ) . . . . . . . 70<br />
3.3.2 Fourier transorm infrared spectroscopy . . . . . . . . . . . . . 71<br />
3.4 Reactive Co-sputtering- Method 3 . . . . . . . . . . . . . . . . . . . . 72<br />
3.4.1 Eect of power <strong>de</strong>nsity applied on <strong>Si</strong> catho<strong>de</strong>, (P <strong>Si</strong> ) . . . . . . 73<br />
3.4.2 Eect of annealing . . . . . . . . . . . . . . . . . . . . . . . . 75<br />
3.5 Summary on SRSO monolayers . . . . . . . . . . . . . . . . . . . . . 79<br />
3.6 Role of the Hydrogen plasma . . . . . . . . . . . . . . . . . . . . . . 80<br />
3.7 SRSO-P15 in a multilayer system: SRSO/<strong>Si</strong>O 2 . . . . . . . . . . . . . 81<br />
3.7.1 Structural analysis . . . . . . . . . . . . . . . . . . . . . . . . 82<br />
3.7.2 Emission properties . . . . . . . . . . . . . . . . . . . . . . . . 84<br />
3.8 Inuence of sublayer thicknesses . . . . . . . . . . . . . . . . . . . . . 85<br />
3.8.1 Fourier transform infrared spectroscopy . . . . . . . . . . . . . 85<br />
3.8.2 Atom probe tomography . . . . . . . . . . . . . . . . . . . . 86<br />
3.8.3 Photoluminescence . . . . . . . . . . . . . . . . . . . . . . . . 87<br />
3.8.4 Inuence of <strong>Si</strong>O 2 barrier thickness . . . . . . . . . . . . . . . . 89<br />
3.9 Summary on SRSO/<strong>Si</strong>O 2 multilayers . . . . . . . . . . . . . . . . . . 89<br />
3.10 Conclusions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 90<br />
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