Films minces à base de Si nanostructuré pour des cellules ...
Films minces à base de Si nanostructuré pour des cellules ... Films minces à base de Si nanostructuré pour des cellules ...
tel-00916300, version 1 - 10 Dec 2013 28
Chapter 2 Experimental techniques and analytical methods tel-00916300, version 1 - 10 Dec 2013 The synthesis of Si nanostructures in various dielectric matrices has been successfully demonstrated by many research groups using a variety of techniques such as ion implantation, PECVD, sputtering, laser ablation etc., as mentioned in chapter 1. Among these, our group (NIMPH team) specializes in RF magnetron sputtering. Multilayers of SRSO alternated by their oxide or their nitride are our prime subjects of investigation. But before proceeding to the multilayers, it is important to choose the growth parameters of each sublayers. Hence, single layers of these materials (SRSO, SiN x and SiO 2 ) were grown to extract informations such as composition, deposition rate, structural and optical properties depending on the fabrication conditions. This chapter details the principle, description and elaboration of the sputtering technique, and the various characterization tools used for investigation. 2.1 Thin lm fabrication The fabrication of thin lms using Physical Vapour Deposition (PVD) can be broadly categorized into two groups: 1) thermal evaporation, in which the target material placed in a vacuum chamber boils, evaporates and nally condenses to deposit a thin lm, and 2) sputtering. The forthcoming discussions are restricted to the latter with more emphasis on magnetron sputtering which is one of the variant techniques that work under the principle of sputtering. 29
- Page 1 and 2: UNIVERSITÉ de CAEN BASSE-NORMANDIE
- Page 3 and 4: tel-00916300, version 1 - 10 Dec 20
- Page 5 and 6: 2.1.1 Radiofrequency Magnetron Reac
- Page 7 and 8: tel-00916300, version 1 - 10 Dec 20
- Page 9 and 10: tel-00916300, version 1 - 10 Dec 20
- Page 11 and 12: 3.21 Inuence of sublayer thicknesse
- Page 13 and 14: tel-00916300, version 1 - 10 Dec 20
- Page 15 and 16: tel-00916300, version 1 - 10 Dec 20
- Page 17 and 18: tel-00916300, version 1 - 10 Dec 20
- Page 19 and 20: Introduction State of the art tel-0
- Page 21 and 22: as the thickness of the lm, the pat
- Page 23 and 24: Chapter 1 Role of Silicon in Photov
- Page 25 and 26: mono-, poly- and amorphous silicon,
- Page 27 and 28: Figure 1.3: A typical solar cell ar
- Page 29 and 30: occurance of this three body event
- Page 31 and 32: tel-00916300, version 1 - 10 Dec 20
- Page 33 and 34: Shockley-Queisser limit of 31% [Sho
- Page 35 and 36: tel-00916300, version 1 - 10 Dec 20
- Page 37 and 38: tel-00916300, version 1 - 10 Dec 20
- Page 39 and 40: tel-00916300, version 1 - 10 Dec 20
- Page 41 and 42: Figure 1.12: materials. Energy diag
- Page 43 and 44: tel-00916300, version 1 - 10 Dec 20
- Page 45: Background of this thesis: A new me
- Page 49 and 50: maximum power into the plasma. (a)
- Page 51 and 52: Figure 2.2: Illustration of sample
- Page 53 and 54: Ray Diraction, X-Ray Reectivity, El
- Page 55 and 56: (a) Normal Incidence. (b) Oblique (
- Page 57 and 58: to equation 2.4, when X-ray beam st
- Page 59 and 60: investigation. This value is obtain
- Page 61 and 62: e seen that large θ (here, θ is u
- Page 63 and 64: Figure 2.12: Raman spectrometer-Sch
- Page 65 and 66: Experimental set-up and working tel
- Page 67 and 68: ˆ The presence of Si from SiO 2 or
- Page 69 and 70: 2.2.7 Spectroscopic Ellipsometry Pr
- Page 71 and 72: k(E) = f j(ω − ω g ) 2 (ω −
- Page 73 and 74: tel-00916300, version 1 - 10 Dec 20
- Page 75 and 76: Figure 2.20: Schematic diagram of t
- Page 77 and 78: Chapter 3 A study on RF sputtered S
- Page 79 and 80: (a) Deposition rate. (b) Refractive
- Page 81 and 82: Thus, by knowing the refractive ind
- Page 83 and 84: tel-00916300, version 1 - 10 Dec 20
- Page 85 and 86: P Ar (mTorr) P H2 (mTorr) r H (%) 1
- Page 87 and 88: such a peak was witnessed in [Quiro
- Page 89 and 90: the host SiO 2 matrix leading to an
- Page 91 and 92: initiated in this thesis, for the g
- Page 93 and 94: P Si (W/cm 2 ) x = 0/Si Bruggemann
- Page 95 and 96: tel-00916300, version 1 - 10 Dec 20
Chapter 2<br />
Experimental techniques and analytical<br />
methods<br />
tel-00916300, version 1 - 10 Dec 2013<br />
The synthesis of <strong>Si</strong> nanostructures in various dielectric matrices has been successfully<br />
<strong>de</strong>monstrated by many research groups using a variety of techniques such as<br />
ion implantation, PECVD, sputtering, laser ablation etc., as mentioned in chapter<br />
1. Among these, our group (NIMPH team) specializes in RF magnetron sputtering.<br />
Multilayers of SRSO alternated by their oxi<strong>de</strong> or their nitri<strong>de</strong> are our prime<br />
subjects of investigation. But before proceeding to the multilayers, it is important<br />
to choose the growth parameters of each sublayers. Hence, single layers of<br />
these materials (SRSO, <strong>Si</strong>N x and <strong>Si</strong>O 2 ) were grown to extract informations such<br />
as composition, <strong>de</strong>position rate, structural and optical properties <strong>de</strong>pending on the<br />
fabrication conditions. This chapter <strong>de</strong>tails the principle, <strong>de</strong>scription and elaboration<br />
of the sputtering technique, and the various characterization tools used for<br />
investigation.<br />
2.1 Thin lm fabrication<br />
The fabrication of thin lms using Physical Va<strong>pour</strong> Deposition (PVD) can be broadly<br />
categorized into two groups:<br />
1) thermal evaporation, in which the target material placed in a vacuum chamber<br />
boils, evaporates and nally con<strong>de</strong>nses to <strong>de</strong>posit a thin lm, and<br />
2) sputtering.<br />
The forthcoming discussions are restricted to the latter with more emphasis on<br />
magnetron sputtering which is one of the variant techniques that work un<strong>de</strong>r the<br />
principle of sputtering.<br />
29