Films minces à base de Si nanostructuré pour des cellules ...
Films minces à base de Si nanostructuré pour des cellules ...
Films minces à base de Si nanostructuré pour des cellules ...
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Shockley-Queisser limit of 31% [Shockley 61]. The possible solution to these problems<br />
would be in attaining a semiconductor with a tunable direct bandgap structure<br />
insensitive to SWE, which is almost completely achieved in quantum conned <strong>Si</strong>.<br />
1.4.1 Quantum Connement Eect (QCE)<br />
tel-00916300, version 1 - 10 Dec 2013<br />
QCE refers to the dramatic size <strong>de</strong>pen<strong>de</strong>nt eects that the semiconductors like<br />
<strong>Si</strong> show when their charge carriers (electron-hole pairs = excitons) are spatially<br />
conned in nanometer sized volumes. At these dimensions, the bulk properties of<br />
the solid becomes severely distorted and the behaviour of a conned exciton follows<br />
'a particle in a box' mo<strong>de</strong>l [Brus 83]. The simplest case of this mo<strong>de</strong>l concerns the<br />
1D system which represents a situation where a particle of mass m is conned by two<br />
walls of innite potential energy at x = 0 and x = L. The particle is free to move<br />
within this space and possesses non-zero discrete energy levels. After mathematical<br />
<strong>de</strong>rivations by solving Schrödinger equation, the permitted energy levels for a 1D<br />
mo<strong>de</strong>l is given as<br />
E n = n 2 h 2 /8mL 2 for n=1,2,3... Eqn (1.1)<br />
Applying the same principles to a particle conned in 3D (i.e.) conned in x, y<br />
and z directions by potential wells at L x ,L y and L z , the energy levels are given as<br />
E nx,n y,n z<br />
= (h 2 /8m) [ (n 2 x/L 2 x) + (n 2 y/L 2 y) + (n 2 z/L 2 z) ] Eqn (1.2)<br />
From equations (1.1) and (1.2), it can be seen that the size of the box has an<br />
inverse relationship with the energy of the particle. Thus, as the size of the box<br />
shrinks which indirectly refers to the particle size, there is an enhancement in the<br />
energy gap. This is the reason behind the enlargement of bandgap as the particle<br />
size <strong>de</strong>creases in nanometric particles which becomes more pronounced below a<br />
particular limit specic to the particle, known as the exciton Bohr radius (typically<br />
< 10 nm). The particles with radii larger than this limit are said to be in the 'weak<br />
connement regime' and those that have radii smaller than the exciton Bohr radius<br />
are said to be in the 'strong connement regime'. Another associated phenomena<br />
with the exciton connement is the breakdown of momentum conservation rule.<br />
When the excitons are conned by a box, it follows the Heisenberg's uncertainity<br />
principle and their position in k space is blurred. Therefore, there is an overlap<br />
between the tail of electron and hole wavefunctions even in an indirect bandgap<br />
semiconductor, giving rise to quasi-direct transitions (Fig. 1.9a). The optical quasidirect<br />
transitions without the intervention of phonons are similar to the case of<br />
15