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tel-00916300, version 1 - 10 Dec 2013<br />

alternate fabrication techniques and by reducing the material requirements. This is<br />

achieved by <strong>de</strong>positing thin lms (1-2 µm thick) of the semiconductor PV material<br />

on glass, silicon or ceramic substrates. Though the costs are reduced to reach US$<br />

1/W, the eciencies are lower than the rst generation solar cells. Cell eciencies of<br />

12-20%, prototype module eciencies of 7-13% and production module eciencies of<br />

9% have been reported from these cells [Internet 04]. The most successful materials<br />

used in second generation solar cells are cadmium telluri<strong>de</strong> (CdTe), copper indium<br />

gallium seleni<strong>de</strong> (CIGS), amorphous silicon and micromorph silicon (combination of<br />

crystalline and amorphous <strong>Si</strong>).<br />

The third generation PV cells aim at enhancing the performance of the<br />

second generation thin lm technology in terms of eciency (targeting 30-60%) while<br />

maintaining a low production cost (targeting < US$ 0.20/W). It aims at producing<br />

future large scale aordable <strong>de</strong>vices using dierent approaches like tan<strong>de</strong>m cells<br />

[Marti 96, Green 06], multiple exciton generation [Nozik 01], hot carrier solar cells<br />

[Ross 82] etc. A more <strong>de</strong>tailed discussion on the third generation PV will be <strong>de</strong>alt<br />

in the forthcoming sections.<br />

1.3 <strong>Si</strong>licon in photovoltaic industry<br />

Traditionally, inorganic semiconductors are used as PV materials. A typical solar<br />

cell contains one or more light-absorbing semiconductor layers that form a chargeseparating<br />

junction (Fig. 1.3). This can be either a homojunction as in <strong>Si</strong>licon or a<br />

heterojunction with other materials. An i<strong>de</strong>al solar cell material must be a readily<br />

available, non-toxic, direct band-gap material with bandgaps between 1-1.7 eV in<br />

addition to its high photovoltaic eciency and long term stability [Goetberger 02].<br />

Besi<strong>de</strong>s, the solar cell material must also possess high absorption coecients of 10 4 -<br />

10 5 cm −1 in the wavelengths between 350 - 1000 nm (1.24-3.54 eV), a high quantum<br />

yield 2 for the excited carriers, a long diusion length and a low recombination velocity<br />

[Poortmans 06]. The economical and ecological aspects such as the abundant<br />

availability in earth's crust with low toxicity make <strong>Si</strong> to be the most important<br />

choice as a PV material. The compatibility of <strong>Si</strong> materials with the already existing<br />

CMOS microelectronic technology, their maturity in the industry, simple well established<br />

processing techniques and mechanical strength become an ad<strong>de</strong>d advantage<br />

for their usage in the PV industries.<br />

2 Quantum yield = Number of photons emitted/Number of photons absorbed<br />

8

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