Films minces à base de Si nanostructuré pour des cellules ...

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t 12 = 2k 1x k 1x + k 2x and t 12 = 2n 2 1k 2x n 2 1k 2x + n 2 2k 2x for s wave and p wave respectively Eqn (xii) Knowing all these relations, the amplitude of the eld from medium 1 to medium 3 can be simply expressed ( by, ) A 1 B 1 ( = D1 −1 D 2 P 2 D2 −1 D 3 A ′ 3 B ′ 3 ) Eqn (xiii) Thus the column vectors that represent the plane wave in each medium is related by a product of 2x2 matrices in sequence. Each side of the interface is linked by dynamical matric and within the thickness of the thin lm by the propagation matrix. Such a recipe can be applied to a multilayer structure and also be extended to a (3 x 3) matrix. tel-00916300, version 1 - 10 Dec 2013 190
Appendix II Trials σ em.max (x10 −17 m 2 ) (Emitter 1) Emission center (nm) Emission width (nm) σ em.max (m 2 ) (Emitter 2) Emission center (nm) Emission width (nm) (Emitter (Emitter (Emitter (Emitter 1) 1) 2) 2) tel-00916300, version 1 - 10 Dec 2013 Trial 1 8.78 800 140 8.78 867 80 Trial 2 8.78 800 150 8.78 867 80 Trial 3 8.78 800 150 8.78 867 90 Trial 4 8.78 800 170 8.78 867 90 Trial 5 0.878 816 130 0.878 867 60 Trial 6 0.0878 816 130 0.0878 867 60 Details of trials performed on the PL spectra of SRSO/SiO 2 MLs shown in gure 5.22a. 191
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UNIVERSITÉ de CAEN BASSE-NORMANDIE
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tel-00916300, version 1 - 10 Dec 20
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2.1.1 Radiofrequency Magnetron Reac
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3.21 Inuence of sublayer thicknesse
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Introduction State of the art tel-0
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as the thickness of the lm, the pat
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Chapter 1 Role of Silicon in Photov
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mono-, poly- and amorphous silicon,
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Figure 1.3: A typical solar cell ar
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occurance of this three body event
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tel-00916300, version 1 - 10 Dec 20
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Shockley-Queisser limit of 31% [Sho
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Figure 1.12: materials. Energy diag
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Background of this thesis: A new me
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Chapter 2 Experimental techniques a
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maximum power into the plasma. (a)
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Figure 2.2: Illustration of sample
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Ray Diraction, X-Ray Reectivity, El
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(a) Normal Incidence. (b) Oblique (
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to equation 2.4, when X-ray beam st
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investigation. This value is obtain
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e seen that large θ (here, θ is u
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Figure 2.12: Raman spectrometer-Sch
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Experimental set-up and working tel
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ˆ The presence of Si from SiO 2 or
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2.2.7 Spectroscopic Ellipsometry Pr
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k(E) = f j(ω − ω g ) 2 (ω −
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tel-00916300, version 1 - 10 Dec 20
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Figure 2.20: Schematic diagram of t
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Chapter 3 A study on RF sputtered S
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(a) Deposition rate. (b) Refractive
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Thus, by knowing the refractive ind
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tel-00916300, version 1 - 10 Dec 20
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P Ar (mTorr) P H2 (mTorr) r H (%) 1
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such a peak was witnessed in [Quiro
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the host SiO 2 matrix leading to an
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initiated in this thesis, for the g
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P Si (W/cm 2 ) x = 0/Si Bruggemann
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Figure 3.15: Absorption coecient cu
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Aim of the study To see the inuence
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It can be seen that there is a sign
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3.8.4 Inuence of SiO 2 barrier thic
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Chapter 4 A study on RF sputtered S
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4.2.2 Structural analysis (a) Fouri
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(a) FTIR spectra of NRSN, Si 3 N 4
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Figure 4.15: Absorption coecient sp
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A multilayer composed of 100 patter
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multilayered conguration. Therefore
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around 1250 cm −1 . The blueshift
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tion but within a dierence of one o
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sample peak 1 (eV) peak 2 (eV) peak
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(a) 1min annealing vs. T A . (b) 1h
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(a) Brewster incidence. (b) Normal
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increases for the 50 patterned samp
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- Peak (3) and (c): 1.8-1.95 eV Die
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4.10.2 Eect of Si-np Size distribut
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Chapter 5 Photoluminescence emissio
Page 157 and 158: As seen from gure 5.1, a part of th
Page 159 and 160: function of wavelength consists of
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Page 163 and 164: In the case of our multilayers, the
Page 165 and 166: ⎛ ⎜ ⎝ A ′ 2 B ′ 2 1 ⎞
Page 167 and 168: dN 3 dt = N 2 τ 23 − (σ em. φ
Page 169 and 170: Figure 5.12: The shapes of k(λ) an
Page 171 and 172: 5.4 Discussion on the choice of inp
Page 173 and 174: tting operations show the presence
Page 175 and 176: (a) 270nm. (b) 300nm. tel-00916300,
Page 177 and 178: (a) σ emis.max. = 8.78 x 10 −18
Page 179 and 180: (a) 50(3/1.5) (b) 50(3/3) tel-00916
Page 181 and 182: (a) Integrated population of excite
Page 183 and 184: two kinds of emitters in SRSO subla
Page 185 and 186: Conclusion and future perspectives
Page 187 and 188: 4. Investigating the origin of phot
Page 189 and 190: Bibliography [Abeles 83] B. Abeles
Page 191 and 192: [Carlson 76] D. E. Carlson & C. R.
Page 193 and 194: [Di 10] D. Di, I. Perez-Wur, G. Con
Page 195 and 196: [Gritsenko 99] V. A. Gritsenko, K.
Page 197 and 198: [Kaiser 56] W. Kaiser, P. H. Kech &
Page 199 and 200: [Mandelkorn 62] J. Mandelkorn, C. M
Page 201 and 202: [Pavesi 00] L. Pavesi, L. D. Negro,
Page 203 and 204: [Sopori 96] B. L. Sopori, X. Deng,
Page 205 and 206: [Weng 93] Y. M. Weng, Zh. N. fan &
Page 207: and the tangential components of th
Page 211: Résumé tel-00916300, version 1 -
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