Films minces à base de Si nanostructuré pour des cellules ...

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[Ruiz 94] F. Ruiz, C. Vazquez-Lopes, J. Gonzales-Hemandes, D. David & J. Allred. J. Vac. Sci. Technol.,A. Vac. Surf. Films, vol. 12, page 2565, 1994. [Salvo 01] B. De Salvo, G. Ghibaudo, P. Luthereau, T. Baron, B. Guillaumot & G. Reimbold. Solid. Stat. Electron., vol. 45, page 1513, 2001. [Sana 94] P. Sana, A. Rohatgi, J. P. Kalejs & R. O. Bell. Appl Phys Lett, vol. 64, page 97, 1994. [Satoh 85] T. Satoh & A. Hiraki. Jap. J. Appl. Phys., vol. 24, page L491, 1985. tel-00916300, version 1 - 10 Dec 2013 [Scardera 08] G. Scardera, T. Puzzer, G. Conibeer & M. A. Green. J. Appl. Phys., vol. 104, page 104310, 2008. [Schuppler 95] S. Schuppler, S. L. Friedman, M. A. Marcus, D. L. Adler, Y. H. Xie, F. M. Ross, Y. J. Chabal, T. D. Harris, L. E. Brus, W. L. Brown, E. E. Chaban, P. F. Szajowski, S. B. Christman & P. H. Citrin. Phys. Rev. B, vol. 52, pages 49104925, 1995. [Seifarth 98] H. Seifarth, R. grotzschel, A. Markwitz, W. Martz, P. Nitzsche & L. Rebohle. Thin Solid Films, vol. 330, page 202, 1998. [Shanks 80] H. R. Shanks, C. J. Fang, L. Ley, M. Cardona, F. J. Demond & S. Kalbitzer. Phys. Stat. Sol. (B), vol. 100, page 43, 1980. [Shanks 81] H. R. Shanks, F. R. Jerey & M. E. lowry. Physique, vol. C4, page 773, 1981. Journal de [Shockley 61] W. Shockley & H. Queisser. vol. 32, pages 510519, 1961. Journal of Applied Physics, [Siltronix 1] Siltronix. http://www.siltronix.com, 1. [So 11] Y. H. So, S. Huang, G. Conibeer & M. A. Green. vol. 519, page 5408, 2011. [Song 08a] D. Song, E. C. Cho, G. Conibeer, Y. Huang, C. Flynn & M. A. Green. J. Appl. Phys., vol. 083544103, page 083544, 2008. [Song 08b] D. Y. Song, E. C. Cho, G. Conibeer, D. Y.Huang, C. Flynn & M. A. Green. J.App, vol. 103, page 083544, 2008. 184
[Sopori 96] B. L. Sopori, X. Deng, J. P. Benner, A. Rohatgi, P. Sana, S. K. Estreicher, Y. K. Park & M. A. Roberstson. Sol. Energy. Mat. Sol. Cell, vol. 41/42, pages 159169, 1996. [Spear 72] W. E. Spear & P. G. LeComber. J. Non. Cryst. Solids, vol. 8, page 727, 1972. [Staebler 77] D. L. Staebler & C. R. Wronski. Appl. Phys. Lett., vol. 31, page 292, 1977. [Staebler 80] D. L. Staebler & C. R. Wronski. J. Appl, vol. 6, page 51, 1980. [Stevens 93] P. D. Stevens & R. Glosser. Appl Phys Lett, vol. 63, page 8003, 1993. tel-00916300, version 1 - 10 Dec 2013 [Street 78] R. A. Street, J. C. Knights & D. K. Biegelson. Phys. Rev. B, vol. 18, page 1880, 1978. [Street 82] R. A. Street. Appl. Phys. Lett., vol. 41, page 1060, 1982. [Sui 92] Z. Sui, P. P. Leong, I. P. Herman, G. S.Higashi & H. Temkin. Appl Phys Lett, vol. 60, page 2086, 1992. [Svrcek 04] V. Svrcek, A. Slaoui & J. C. Muller. Thin Solid Films, vol. 451, page 384, 2004. [Taguchi 00] M. Taguchi, K. Kawamoto, S. Tsuge, T. Baba, H. Sakata, M. Morizane, K. Uchihashi, N. Nakamura, S. Kiyama & O. Oota. Prog. Photovolt: Res. Appl., vol. 8, page 503, 2000. [Ternon 02] Celine Ternon. Nanostructures luminescentes a base de silice et de silicium: de l'elaboration par pulverisation magnetron reactive a la modelisation de la photoluminescence. PhD thesis, Universite de Caen/Basse-Normandie, 2002. [Ternon 04a] C. Ternon, C. Dufour, F. Gourbilleau & R. Rizk. Eur. Phys. J. B, vol. 41, page 325, 2004. [Ternon 04b] C. Ternon, C. Dufour, F. Gourbilleau & R. Rizk. Eur. Phys. J. B, vol. 91, pages 325332, 2004. [Timmerman 08] D. Timmerman, I. Izeddin, P. Stallinga, W. Yassierich & T. Gregorekeiwicz. Nat. photonics, vol. 2, pages 105109, 2008. 185
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UNIVERSITÉ de CAEN BASSE-NORMANDIE
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tel-00916300, version 1 - 10 Dec 20
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2.1.1 Radiofrequency Magnetron Reac
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3.21 Inuence of sublayer thicknesse
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Introduction State of the art tel-0
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as the thickness of the lm, the pat
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Chapter 1 Role of Silicon in Photov
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mono-, poly- and amorphous silicon,
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Figure 1.3: A typical solar cell ar
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occurance of this three body event
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tel-00916300, version 1 - 10 Dec 20
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Shockley-Queisser limit of 31% [Sho
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Figure 1.12: materials. Energy diag
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tel-00916300, version 1 - 10 Dec 20
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Background of this thesis: A new me
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Chapter 2 Experimental techniques a
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maximum power into the plasma. (a)
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Figure 2.2: Illustration of sample
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Ray Diraction, X-Ray Reectivity, El
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(a) Normal Incidence. (b) Oblique (
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to equation 2.4, when X-ray beam st
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investigation. This value is obtain
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e seen that large θ (here, θ is u
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Figure 2.12: Raman spectrometer-Sch
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Experimental set-up and working tel
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ˆ The presence of Si from SiO 2 or
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2.2.7 Spectroscopic Ellipsometry Pr
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k(E) = f j(ω − ω g ) 2 (ω −
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tel-00916300, version 1 - 10 Dec 20
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Figure 2.20: Schematic diagram of t
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Chapter 3 A study on RF sputtered S
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(a) Deposition rate. (b) Refractive
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Thus, by knowing the refractive ind
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tel-00916300, version 1 - 10 Dec 20
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P Ar (mTorr) P H2 (mTorr) r H (%) 1
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such a peak was witnessed in [Quiro
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the host SiO 2 matrix leading to an
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initiated in this thesis, for the g
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P Si (W/cm 2 ) x = 0/Si Bruggemann
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tel-00916300, version 1 - 10 Dec 20
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Figure 3.15: Absorption coecient cu
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Aim of the study To see the inuence
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tel-00916300, version 1 - 10 Dec 20
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It can be seen that there is a sign
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tel-00916300, version 1 - 10 Dec 20
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3.8.4 Inuence of SiO 2 barrier thic
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Chapter 4 A study on RF sputtered S
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4.2.2 Structural analysis (a) Fouri
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tel-00916300, version 1 - 10 Dec 20
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(a) FTIR spectra of NRSN, Si 3 N 4
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tel-00916300, version 1 - 10 Dec 20
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Figure 4.15: Absorption coecient sp
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A multilayer composed of 100 patter
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multilayered conguration. Therefore
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around 1250 cm −1 . The blueshift
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tion but within a dierence of one o
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sample peak 1 (eV) peak 2 (eV) peak
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(a) 1min annealing vs. T A . (b) 1h
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tel-00916300, version 1 - 10 Dec 20
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(a) Brewster incidence. (b) Normal
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tel-00916300, version 1 - 10 Dec 20
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increases for the 50 patterned samp
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- Peak (3) and (c): 1.8-1.95 eV Die
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4.10.2 Eect of Si-np Size distribut
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Page 157 and 158: As seen from gure 5.1, a part of th
Page 159 and 160: function of wavelength consists of
Page 163 and 164: In the case of our multilayers, the
Page 165 and 166: ⎛ ⎜ ⎝ A ′ 2 B ′ 2 1 ⎞
Page 167 and 168: dN 3 dt = N 2 τ 23 − (σ em. φ
Page 169 and 170: Figure 5.12: The shapes of k(λ) an
Page 171 and 172: 5.4 Discussion on the choice of inp
Page 173 and 174: tting operations show the presence
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Page 177 and 178: (a) σ emis.max. = 8.78 x 10 −18
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Page 181 and 182: (a) Integrated population of excite
Page 183 and 184: two kinds of emitters in SRSO subla
Page 185 and 186: Conclusion and future perspectives
Page 187 and 188: 4. Investigating the origin of phot
Page 189 and 190: Bibliography [Abeles 83] B. Abeles
Page 191 and 192: [Carlson 76] D. E. Carlson & C. R.
Page 193 and 194: [Di 10] D. Di, I. Perez-Wur, G. Con
Page 195 and 196: [Gritsenko 99] V. A. Gritsenko, K.
Page 197 and 198: [Kaiser 56] W. Kaiser, P. H. Kech &
Page 199 and 200: [Mandelkorn 62] J. Mandelkorn, C. M
Page 201: [Pavesi 00] L. Pavesi, L. D. Negro,
Page 205 and 206: [Weng 93] Y. M. Weng, Zh. N. fan &
Page 207 and 208: and the tangential components of th
Page 209 and 210: Appendix II Trials σ em.max (x10
Page 211: Résumé tel-00916300, version 1 -
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