Films minces à base de Si nanostructuré pour des cellules ...

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[Beaucarne 02] G. Beaucarne, A. S. Brown, M. J. Keevers, R. Corkish & 345- 353 M. A. Green Prog. Phot. Res. Appl. 10. Prog. Photovolt: Res. Appl., vol. 10, page 345, 2002. [Bensch 90] W. Bensch & W. Bergholz. Semicond. Sic. Technol., vol. 5, page 421, 1990. [Bergmann 99] R. B. Bergmann. Appl. Phys. A, vol. 69, pages 187194, 1999. [Berremann 63] D. W. Berremann. Phys Rev. B, vol. 130, page 2193, 1963. tel-00916300, version 1 - 10 Dec 2013 [Boehme 10] C. Boehme. Mapping of recombination mechanisms in hydrogentaed amorphous silcion with coherent spin control-a 21st century approach to unsolved 20th century solar cell ef- ciency challenges. 55th Annual Report DNI10, acswebcontent.acs.org/prfar2010/reports/, 2010. [Bonafos 04] C. Bonafos, M. Carrada, N. Cherkashin, H. Con, D. Chassaing, G. Ben Assayag & A. Claverie. J. Appl. Phys., vol. 95, page 5696, 2004. [Borghesi 91] A. Borghesi, M. Geddo & B. Pivac. J. Appl. Phys., vol. 69, page 7251, 1991. [Boucher 06] Y. G. Boucher. Journal of European Optical Society - Rapid publications, vol. 1, page 06027, 2006. [Brown 09] G. F. Brown & J. Wu. Laser & Photon Rev. 3, vol. 4, page 394, 2009. [Bruggeman 35] D. A. G. Bruggeman. Ann. Physik (Leipzig), vol. 24, page 636, 1935. [Brus 83] L. E. Brus. J. Chem. Phys., vol. 79, page 5566, 1983. [Bustarret 98] E. Bustarret, M. Bensouda, M. C. Habrard, J. C. Bruyere, S. Poulin & S. C. Gujarathi. Phys. Rev. B, vol. 38, page 8171, 1998. [Canham 90] L. T. Canham. Appl. Phys. Lett., vol. 57, pages 10461048, 1990. [Canham 91] L. T. Canham, M. R. Houlton, W. Y. Leong, C. Pickering & J. M. Keen. J. Appl. Phys., vol. 70, page 422, 1991. 172
[Carlson 76] D. E. Carlson & C. R. Wronski. Amorphous SIlicon Solar Cells. Appl. Phys. Lett., vol. 28, page 671, 1976. [Chang 10] G. R. Chang, F. M., D. Y. Ma & K. W. Xu. Nanotechnology, vol. 21, page 465605, 2010. [Chapin 54] D. M. Chapin, C. S. Fuller & G. L. Pearson. J. Appl. Phys., vol. 25, page 676, 1954. [Charvet 99] Stephane Charvet. Croissance et propietes d'emission dans le visible de nanograins de silicium dans une matrice de silice:analyse par ellispometrie spectroscopique. PhD thesis, Universite de Caen/Basse-Normandie, 1999. tel-00916300, version 1 - 10 Dec 2013 [Chausserie 05] S. Chausserie, N. Khalfaoui, C. Dufour, J. Vicens, P. Marie & F. Gourbilleau. Optical Materials, vol. 27, page 1026, 2005. [Chen 04] X. Y. Chen, Y. lu, Y. Wu, B. Cho, W. Song & D. Dai. Appl. Phys. Lett., vol. 96, page 3180, 2004. [Chittick 69] R. C. Chittick, J. H. Alexander & H. F. Sterling. J. Electrochem. Soc, vol. 116, page 77, 1969. [Cho 07] E. C. Cho, M. A. Green, G. Conibeer, D. Song, Y. H. Cho, G. Scardera, S. Huang, S. Park, X. J. Hao, Y. Huang & L. Van Dao. Advances in optoelectronics, vol. Article ID 69578, 2007. [Cho 08] E.C. Cho, S. Park, X. Hao, D. Song, G. Conibeer, S.C. Park & M. A. Green. Nanotechnology, vol. 19, page 245201, 2008. [Chopra 04] K. Chopra, P. Paulson & V. Dutta. Thin Film Solar Cells: An overview: In: Progress in photovoltaics research and applications, vol. 12, pages 6992, 2004. [Coates 00] John Coates. Interpretation of infrared spectra: a practical approach. John Wiley & Sons, Ltd, 2000. [Coa 05] S. Coa. Light from Silicon. spectrum.ieee.org, 2005. [Conibeer 06] G. Conibeer, M. A. Green, R. Corkish, Y. Cho, E. C. Cho, C. W. Jiang, T. Fangsuwannarak, E. Pink, Y. Huang, T. Puzzer, T. Trupke, B. Richards, A. Shalav & K. Lin. Thin Solid Films, vol. 511-512, pages 654 662, 2006. 173
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UNIVERSITÉ de CAEN BASSE-NORMANDIE
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tel-00916300, version 1 - 10 Dec 20
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2.1.1 Radiofrequency Magnetron Reac
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3.21 Inuence of sublayer thicknesse
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Introduction State of the art tel-0
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as the thickness of the lm, the pat
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Chapter 1 Role of Silicon in Photov
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mono-, poly- and amorphous silicon,
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Figure 1.3: A typical solar cell ar
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occurance of this three body event
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tel-00916300, version 1 - 10 Dec 20
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Shockley-Queisser limit of 31% [Sho
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Figure 1.12: materials. Energy diag
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Background of this thesis: A new me
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Chapter 2 Experimental techniques a
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maximum power into the plasma. (a)
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Figure 2.2: Illustration of sample
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Ray Diraction, X-Ray Reectivity, El
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(a) Normal Incidence. (b) Oblique (
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to equation 2.4, when X-ray beam st
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investigation. This value is obtain
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e seen that large θ (here, θ is u
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Figure 2.12: Raman spectrometer-Sch
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Experimental set-up and working tel
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ˆ The presence of Si from SiO 2 or
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2.2.7 Spectroscopic Ellipsometry Pr
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k(E) = f j(ω − ω g ) 2 (ω −
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tel-00916300, version 1 - 10 Dec 20
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Figure 2.20: Schematic diagram of t
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Chapter 3 A study on RF sputtered S
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(a) Deposition rate. (b) Refractive
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Thus, by knowing the refractive ind
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tel-00916300, version 1 - 10 Dec 20
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P Ar (mTorr) P H2 (mTorr) r H (%) 1
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such a peak was witnessed in [Quiro
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the host SiO 2 matrix leading to an
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initiated in this thesis, for the g
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P Si (W/cm 2 ) x = 0/Si Bruggemann
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tel-00916300, version 1 - 10 Dec 20
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Figure 3.15: Absorption coecient cu
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Aim of the study To see the inuence
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It can be seen that there is a sign
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3.8.4 Inuence of SiO 2 barrier thic
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Chapter 4 A study on RF sputtered S
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4.2.2 Structural analysis (a) Fouri
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(a) FTIR spectra of NRSN, Si 3 N 4
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tel-00916300, version 1 - 10 Dec 20
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Figure 4.15: Absorption coecient sp
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A multilayer composed of 100 patter
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multilayered conguration. Therefore
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around 1250 cm −1 . The blueshift
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tion but within a dierence of one o
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sample peak 1 (eV) peak 2 (eV) peak
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(a) 1min annealing vs. T A . (b) 1h
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Page 155 and 156: Chapter 5 Photoluminescence emissio
Page 157 and 158: As seen from gure 5.1, a part of th
Page 159 and 160: function of wavelength consists of
Page 163 and 164: In the case of our multilayers, the
Page 165 and 166: ⎛ ⎜ ⎝ A ′ 2 B ′ 2 1 ⎞
Page 167 and 168: dN 3 dt = N 2 τ 23 − (σ em. φ
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Page 171 and 172: 5.4 Discussion on the choice of inp
Page 173 and 174: tting operations show the presence
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Page 177 and 178: (a) σ emis.max. = 8.78 x 10 −18
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Page 181 and 182: (a) Integrated population of excite
Page 183 and 184: two kinds of emitters in SRSO subla
Page 185 and 186: Conclusion and future perspectives
Page 187 and 188: 4. Investigating the origin of phot
Page 189: Bibliography [Abeles 83] B. Abeles
Page 193 and 194: [Di 10] D. Di, I. Perez-Wur, G. Con
Page 195 and 196: [Gritsenko 99] V. A. Gritsenko, K.
Page 197 and 198: [Kaiser 56] W. Kaiser, P. H. Kech &
Page 199 and 200: [Mandelkorn 62] J. Mandelkorn, C. M
Page 201 and 202: [Pavesi 00] L. Pavesi, L. D. Negro,
Page 203 and 204: [Sopori 96] B. L. Sopori, X. Deng,
Page 205 and 206: [Weng 93] Y. M. Weng, Zh. N. fan &
Page 207 and 208: and the tangential components of th
Page 209 and 210: Appendix II Trials σ em.max (x10
Page 211: Résumé tel-00916300, version 1 -
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