[Beaucarne 02] G. Beaucarne, A. S. Brown, M. J. Keevers, R. Corkish & 345- 353 M. A. Green Prog. Phot. Res. Appl. 10. Prog. Photovolt: Res. Appl., vol. 10, page 345, 2002. [Bensch 90] W. Bensch & W. Bergholz. Semicond. <strong>Si</strong>c. Technol., vol. 5, page 421, 1990. [Bergmann 99] R. B. Bergmann. Appl. Phys. A, vol. 69, pages 187194, 1999. [Berremann 63] D. W. Berremann. Phys Rev. B, vol. 130, page 2193, 1963. tel-00916300, version 1 - 10 Dec 2013 [Boehme 10] C. Boehme. Mapping of recombination mechanisms in hydrogentaed amorphous silcion with coherent spin control-a 21st century approach to unsolved 20th century solar cell ef- ciency challenges. 55th Annual Report DNI10, acswebcontent.acs.org/prfar2010/reports/, 2010. [Bonafos 04] C. Bonafos, M. Carrada, N. Cherkashin, H. Con, D. Chassaing, G. Ben Assayag & A. Claverie. J. Appl. Phys., vol. 95, page 5696, 2004. [Borghesi 91] A. Borghesi, M. Geddo & B. Pivac. J. Appl. Phys., vol. 69, page 7251, 1991. [Boucher 06] Y. G. Boucher. Journal of European Optical Society - Rapid publications, vol. 1, page 06027, 2006. [Brown 09] G. F. Brown & J. Wu. Laser & Photon Rev. 3, vol. 4, page 394, 2009. [Bruggeman 35] D. A. G. Bruggeman. Ann. Physik (Leipzig), vol. 24, page 636, 1935. [Brus 83] L. E. Brus. J. Chem. Phys., vol. 79, page 5566, 1983. [Bustarret 98] E. Bustarret, M. Bensouda, M. C. Habrard, J. C. Bruyere, S. Poulin & S. C. Gujarathi. Phys. Rev. B, vol. 38, page 8171, 1998. [Canham 90] L. T. Canham. Appl. Phys. Lett., vol. 57, pages 10461048, 1990. [Canham 91] L. T. Canham, M. R. Houlton, W. Y. Leong, C. Pickering & J. M. Keen. J. Appl. Phys., vol. 70, page 422, 1991. 172
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Introduction State of the art tel-0
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Chapter 1 Role of Silicon in Photov
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mono-, poly- and amorphous silicon,
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Figure 1.3: A typical solar cell ar
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occurance of this three body event
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Shockley-Queisser limit of 31% [Sho
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Figure 1.12: materials. Energy diag
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Background of this thesis: A new me
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Chapter 2 Experimental techniques a
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maximum power into the plasma. (a)
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Figure 2.2: Illustration of sample
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Ray Diraction, X-Ray Reectivity, El
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(a) Normal Incidence. (b) Oblique (
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to equation 2.4, when X-ray beam st
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investigation. This value is obtain
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Figure 2.12: Raman spectrometer-Sch
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Experimental set-up and working tel
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k(E) = f j(ω − ω g ) 2 (ω −
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P Ar (mTorr) P H2 (mTorr) r H (%) 1
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such a peak was witnessed in [Quiro
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the host SiO 2 matrix leading to an
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initiated in this thesis, for the g
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P Si (W/cm 2 ) x = 0/Si Bruggemann
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multilayered conguration. Therefore
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around 1250 cm −1 . The blueshift
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(a) 1min annealing vs. T A . (b) 1h
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- Page 203 and 204: [Sopori 96] B. L. Sopori, X. Deng,
- Page 205 and 206: [Weng 93] Y. M. Weng, Zh. N. fan &
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