Films minces à base de Si nanostructuré pour des cellules ...
Films minces à base de Si nanostructuré pour des cellules ...
Films minces à base de Si nanostructuré pour des cellules ...
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As seen from gure 5.1, a part of the inci<strong>de</strong>nt light is transmitted within the<br />
thin lm and a part is reected back. Therefore the total electric eld −→ E (x) is<br />
a superposition of two waves travelling opposite to each other in the positive and<br />
negative directions of x with elds E + and E − . This can be represented by,<br />
E y (x) = E + e −ikxx + E − e ikxx =A(x) + B(x) Eqn (5.2)<br />
where ±k x represent the x component of wave vector, A(x) and B(x) are constants<br />
in the positive and negative directions of x. We consi<strong>de</strong>r A(x) and B(x)<br />
at four positions for simplicity: top and bottom of interfaces at x = 0 and x = d<br />
repectively as shown in gure 5.1. These can be written as,<br />
A 1 = A(x = 0 − ) and B 1 = B(x = 0 − ) Eqn (5.3)<br />
tel-00916300, version 1 - 10 Dec 2013<br />
A ′ 2 = A(x = 0 + ) and B ′ 2 = B(x = 0 + ) Eqn (5.4)<br />
A 2 = A(x = d − ) and B 2 = B(x = d − ) Eqn (5.5)<br />
A ′ 3 = A(x = d + ) and B ′ 3 = B(x = d + ) Eqn (5.6)<br />
Therefore, we can quantitatively <strong>de</strong>scribe the pump prole <strong>de</strong>pending upon transmission<br />
and reection of the inci<strong>de</strong>nt wave using Fresnel's equations. For this, the<br />
components A 1 which corresponds to the inci<strong>de</strong>nt pump eld and B 1 the eld of the<br />
reected wave can be linked using the following equation, <strong>de</strong>tailed in Appendix I,<br />
(<br />
) (<br />
A 1<br />
= M<br />
B 1<br />
A ′ 3<br />
B ′ 3<br />
)<br />
Eqn (5.7)<br />
where B ′ 3=0, consi<strong>de</strong>ring a semi-innite medium (no wave travelling towards<br />
the negative direction of x) and M is a product of matrices that link the elds in<br />
medium 1 and 3. The ratio of A 1 to B 1 gives the reected amplitu<strong>de</strong> and A 1 to A ′ 3<br />
the transmitted amplitu<strong>de</strong>. For a known input eld A 1 , the reected amplitu<strong>de</strong> B 1<br />
can be calculated with the global reection coecient of all the structure (r glob ) due<br />
to the propagation of the wave insi<strong>de</strong> the thin lm.<br />
The pump eld repartition in the thin lm is thus obtained by connecting each<br />
of the components mentioned in gure 5.1 as follows,<br />
(<br />
(<br />
) (<br />
A 1<br />
= D1 −1 D 2<br />
B 1<br />
) (<br />
A 2<br />
= D2 −1 D 3<br />
B 2<br />
A ′ 2<br />
B ′ 2<br />
A ′ 3<br />
B ′ 3<br />
)<br />
= D 12<br />
(<br />
)<br />
= D 23<br />
(<br />
A ′ 2<br />
B ′ 2<br />
A ′ 3<br />
B ′ 3<br />
)<br />
)<br />
Eqn (5.8)<br />
Eqn (5.9)<br />
139