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4.10.2 Eect of <strong>Si</strong>-np <strong>Si</strong>ze distribution<br />

tel-00916300, version 1 - 10 Dec 2013<br />

The origin of peak (2) has been attributed to <strong>Si</strong>-np following the quantum connement<br />

eect throughout our earlier discussions. In or<strong>de</strong>r to conrm this, investigations<br />

were done relating the experimentally obtained <strong>Si</strong>-np size with the Delerue law<br />

[Delerue 93]. The size of <strong>Si</strong>-np in a 3.5 nm SRSO sublayer has been estimated to be<br />

3-4 nm from experiments in chapters 3 and 4, leading to a peak position of about<br />

1.6 eV with the Delerue law. This peak position can be related to peak (2).<br />

The peaks (1, a & b) between 1.2-1.45eV is seen mostly only in N 2 annealed<br />

samples. This peak is seen to redshift with increasing t A , similar to peak (2). <strong>Si</strong>nce<br />

increasing t A may lead to increasing <strong>Si</strong>-np size, we may suppose that these peaks<br />

also follow a quantum connement mo<strong>de</strong>l. Using the Delerue's law to i<strong>de</strong>ntify the<br />

peaks between 1.2-1.45 eV range results in particle sizes ranging between 5.5-13.5<br />

nm. Though, we may suppose the possible formation of 5.5 nm <strong>Si</strong>-np due to some<br />

overgrowth at the interfaces, but 13.5 nm for the lowest energy is impossible since<br />

we do not observe a breakdown of multilayer structure to result in such big <strong>Si</strong>-np.<br />

The TEM image of 100(3.5/5) ML which has peak (1) at low emission energy (1.24<br />

eV) conrms that we have perfect alternations of the two sublayers, and EFTEM<br />

also conrms the presence of <strong>Si</strong>-np restricted to SRSO sublayer. Therefore, this<br />

peak cannot be attributed to such big <strong>Si</strong>-np even at SRSO interfaces. From our<br />

XRD, TEM and EFTEM observations, we have conrmed the absence of <strong>Si</strong>-np in<br />

SRSN either in crystalline or amorphous form. Thus, it can be said that this peak<br />

is not necessarily related to <strong>Si</strong>-np in SRSO or SRSN sublayers but has some other<br />

origin such as interference which will be analyzed in the next chapter.<br />

4.10.3 Eect of surface microstructure<br />

The surface microstructure of STA and FG annealed samples has been investigated<br />

by optical microscopy performed on 50(3.5/5) SRSO/SRSN ML (Fig. 4.45). It<br />

can be noticed that, with N 2 annealing the sample surfaces show the appearance of<br />

circular spots as already shown in gure 4.21 on 100(3.5/5) CA sample.<br />

The surfaces of both STA and CA annealed samples are similar and show the appearance<br />

of circular spots after annealing. Moreover, there is no signicant change in<br />

the size of these spots with annealing. The surface microstructure of STA 50(3.5/5)<br />

ML is similar to 100(3.5/5) ML, but the size of the circular spots increase for CA<br />

100(3.5/5). The inuence of STA and CA on the PL intensity are the same on<br />

the 50 and 100 patterned MLs, <strong>de</strong>spite the pronounced surface dierence after CA.<br />

Concerning the FG annealed samples, there is no dierence on the surface structure<br />

131

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