Films minces à base de Si nanostructuré pour des cellules ...
Films minces à base de Si nanostructuré pour des cellules ...
Films minces à base de Si nanostructuré pour des cellules ...
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- Peak (3) and (c): 1.8-1.95 eV<br />
Dierent names are given for the three peaks in 100(3.5/5) and 50(3.5/5) ML<br />
since the origin of these three peaks in both the cases may be dierent. It can be<br />
seen that the position of peak (c) is sometimes the same as peak (2) or sometimes<br />
as peak (3) leading to confusions on the origin of this emission. Hence, further<br />
investigations were ma<strong>de</strong> in an attempt to un<strong>de</strong>rstand the origin of PL emission<br />
4.10.1 Role of <strong>de</strong>fects in the matrix<br />
In or<strong>de</strong>r to see the inuence of SRSN sublayers on the emission of peaks, 50(3.5/3.5)<br />
SRSN/<strong>Si</strong>O 2 MLs were grown and subjected to STA, CA and FG annealing. The<br />
tel-00916300, version 1 - 10 Dec 2013<br />
PL spectra obtained from SRSO/SRSN MLs can be compared with SRSN/<strong>Si</strong>O 2<br />
and SRSO/<strong>Si</strong>O 2 MLs in or<strong>de</strong>r to i<strong>de</strong>ntify the contribution of SRSO, SRSN and<br />
<strong>Si</strong>O 2 sublayers in<strong>de</strong>pen<strong>de</strong>ntly. Figure 4.43 compares the PL spectra obtained from<br />
SRSO/<strong>Si</strong>O 2 , SRSO/SRSN and SRSN/<strong>Si</strong>O 2 MLs with 50(3.5/3.5) conguration after<br />
STA and CA. It can be noticed from the spectra of CA annealed samples that the<br />
SRSN/<strong>Si</strong>O 2 ML exhibits a weak PL around 1.9 eV while that from SRSO/SRSN<br />
ML is quenched as <strong>de</strong>monstrated before (ref. Fig. 4.25). This PL peak appears<br />
in a region usually related to the optical transitions in the <strong>Si</strong>O 2 matrix due to the<br />
presence of <strong>de</strong>fects [Gourbilleau 09, Delachat 09].<br />
The lower part of the gure 4.43<br />
shows the PL spectra recor<strong>de</strong>d from<br />
STA MLs. It can be noted that both<br />
SRSN/<strong>Si</strong>O 2 and SRSO/<strong>Si</strong>O 2 emit PL at<br />
the same peak position (around 1.9 eV),<br />
the latter being very weak. This indicates<br />
that besi<strong>de</strong>s <strong>Si</strong>O 2 , SRSN sublayers<br />
also contribute to emission around<br />
1.9 eV in SRSN/<strong>Si</strong>O 2 ML. The PL intensity<br />
of SRSN/<strong>Si</strong>O 2 increases with annealing<br />
temperature while the peak position<br />
remains xed at 1.9 eV (See inset<br />
of Fig. 4.43). From gure 4.40 one can<br />
remark that that this peak around 1.9<br />
eV is not seen in 50(3.5/5) ML, while<br />
in 100(3.5/5) it is signicant. Moreover,<br />
even un<strong>de</strong>r N 2 annealed STA samples,<br />
this peak was noticed with increasing<br />
Figure 4.43: PL spectra from 50(3.5/3.5)<br />
SRSO/SRSN, SRSO/<strong>Si</strong>O 2 and SRSN/<strong>Si</strong>O 2<br />
MLs after STA and CA treatments.<br />
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