Films minces à base de Si nanostructuré pour des cellules ...
Films minces à base de Si nanostructuré pour des cellules ...
Films minces à base de Si nanostructuré pour des cellules ...
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(a) PL spectra vs. FG annealing. (b) PL peak maximum vs. t A .<br />
tel-00916300, version 1 - 10 Dec 2013<br />
Figure 4.39: (a) Eect of annealing time un<strong>de</strong>r forming gas on the PL spectra of<br />
50(3.5/5) SRSO/SRSN ML and, (b) PL peak maximum with regard to time of annealing<br />
in SRSO/SRSN MLs with dierent t SRSN . (Inset) Recalling the inuence of t SRSN on PL<br />
from STA (1min-1000°C/N 2 ) samples.<br />
the control over emission peak position.<br />
Figure 4.39b shows the PL peak maximum of FG annealed 50(3.5/t SRSN ) MLs<br />
where t SRSN varies between 1.5-10 nm. The samples were annealed sequentially<br />
between 0.5-5h. It can be observed that the time of annealing shows minimal in-<br />
uence on the PL intensity. Thus, 0.5h is a sucient annealing time for achieving<br />
consi<strong>de</strong>rable emission.<br />
<strong>Si</strong>nce T A =500°C favours exodiusion<br />
of hydrogen, further investigations un<strong>de</strong>r<br />
forming gas annealing were performed<br />
by reducing T A , to un<strong>de</strong>rstand<br />
the role of hydrogen in passivation of<br />
dangling bonds. <strong>Si</strong>milar intensities were<br />
obtained even by reducing the T A further<br />
down to 380°C (not shown here).<br />
It was observed in both the cases, that<br />
the intensities for a given time increase<br />
with t SRSN till 8 nm and <strong>de</strong>creases with<br />
further increase in t SRSN as observed in<br />
STA (Inset of Fig. 4.39b). Figure 4.40<br />
shows a comparison of PL spectra between<br />
50 and 100 patterned MLs after STA and 4.75h-FG. The emission intensity<br />
Figure 4.40: Comparing the PL spectra<br />
obtained after STA and 4.75h-FG annealing<br />
processes in 50 and 100 patterned<br />
SRSO/SRSN MLs.<br />
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