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tel-00916300, version 1 - 10 Dec 2013<br />

The thicknesses of the SRSO and<br />

SRSN sublayers are seen to be 3.7 nm<br />

and 5.1 nm respectively, conrming the<br />

pattern thickness of 8.8 nm <strong>de</strong>duced<br />

from XRR technique. The presence of<br />

<strong>Si</strong> nanocrystals are witnessed only in the<br />

SRSO sublayers and most of them were<br />

restricted to the 3.7 nm sublayer thickness,<br />

coherent with average size estimation<br />

from XRD. However, nanocrystals<br />

that show overgrowth in both the width<br />

and the height were also observed as<br />

shown in this gure. The presence of<br />

oversized <strong>Si</strong> nanocrystal could be the<br />

consequence of high temperature and<br />

time applied on a <strong>Si</strong>-rich (SRSO, SRSN)<br />

lm during the annealing process. It can<br />

Figure 4.24: HR-TEM image of CA<br />

100(3.5/5) SRSO/SRSN ML. The arrows indicate<br />

the possible exodiusion paths.<br />

also be noticed that there are regular darker regions (arrows in Fig. 4.24) in the<br />

SRSO sublayers that lie along a line. This can be attributed to the path of gas<br />

exodiusion during annealing, as suspected to be one of the reason for surface modications<br />

in the optical microscopy analysis of the CA sample (ref. Fig. 4.21).<br />

4.5.7 Optical properties<br />

(a) Photoluminescence<br />

The PL spectra of as-grown and CA samples of 100(3.5/5) ML are shown in gure<br />

4.25. The SRSO/SRSN as-grown sample shows PL emission contrary to SRSO/<strong>Si</strong>O 2<br />

samples which did not show emission before annealing. This emission from the asgrown<br />

SRSO/SRSN ML achieved by the replacement of <strong>Si</strong>O 2 by SRSN sublayer<br />

suggests that the SRSO sublayer is emitting and the presence of <strong>de</strong>fects in <strong>Si</strong>O 2<br />

might have quenched the PL in SRSO/<strong>Si</strong>O 2 MLs.<br />

The as-grown PL spectrum can be seen to contain three peaks centered around<br />

1.41 eV (peak 1), 1.62 eV (peak 2) and 1.88 eV (peak 3). This suggests the presence of<br />

dierent emission centers in the material such as <strong>de</strong>fects or amorphous <strong>Si</strong>-np in SRSO<br />

and/or SRSN sublayers. The position of peaks (1 and 2) might be ascribed to the<br />

electron-hole recombination in the <strong>Si</strong>-np within the frame of QCE [Kanemitsu 97,<br />

Ternon 04a, Gourbilleau 09]. Peak (3) closely relates to 1.9eV value reported for<br />

113

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