Films minces à base de Si nanostructuré pour des cellules ...

(a) FTIR spectra of NRSN, Si 3 N 4 and SRSN. (b) Evolution of FTIR spectra with n 1.95eV .
tel-00916300, version 1 - 10 Dec 2013
Figure 4.10: FTIR spectra of SiN x monolayers recorded in Brewster incidence. The
table of sub-gure (a) shows the peak positions of LO Si−N and TO Si−N modes obtained
by gaussian curve tting.
(a) Si 3 N 4
(b) SRSN
Figure 4.11: Eect of annealing on the structural properties as investigated by Brewster
and normal incidence FTIR spectra on (a) Si 3 N 4 and (b) SRSN.
Both the samples show a similar evolution with annealing as observed from
samples grown by the rst approach. The sample undergoes oxidation after CA, as
can be seen from peaks around 1250 cm −1 and 1080 cm −1 in Brewster incidence and
normal incidence spectra respectively, indicating the LO 3 and TO 3 modes of Si-O.
In the case of Si 3 N 4 layers, the LO Si−N peak intensity increases with annealing
and shifts towards higher wavenumber whereas the TO Si−N peak increases in intensity
but remains at a xed position. These increase in intensities may indicate a
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